Gigabit Pulse Position Bistability in Semiconductor Lasers

The paper briefly reviews the major forms of optical bistability in active optical devices compatible for use in gigabit optical communication systems, and reports an entirely new optical bistability for the first time. Unlike previous devices, the two bistable states of the optical device are each a series of picosecond optical pulses at 1 GHz or greater repetition rates, and are distinguished by a half period temporal shift between their temporal positions in relation to a clock pulse. The bistable device is based on a gain switched semiconductor laser. Theoretical studies suggest 100-ps switching speeds might be achieved, and experimental results are reported indicating optically triggered switching times of 500 ps. © 1987, American Medical Association. All rights reserved.

High power short pulse generation at high repetition rate from InGaN violet laser diodes

The generation of 22 ps pulses with peak powers of 0.74 W by a gain-switched InGaN violet laser diode is reported. Significant pulse width dependence on repetition rate is observed. © 2011 OSA.

Simultaneous pulse compression and jitter reduction at 10GHz using novel self-seeding gain-switched DFB laser incorporating a DILM

A novel scheme using a 10 GHz gain-switched DFB laser with simultaneous pulse width and jitter compression allows generation of 380fs pulses with both system limited 150fs jitter and 30 dB extinction ratio. ©1999 Optical Society of America.

158-microJ pulses from a single-transverse-mode, large-mode-area erbium-doped fiber amplifier.

We report the amplification of 10-100-pJ semiconductor diode pulses to an energy of 158 microJ and peak powers >100 kW in a multistage fiber amplifier chain based on a single-mode, large-mode-area erbium-doped amplifier design. To our knowledge these results represent the highest single-mode pulse energy extracted from any doped-fiber system.