Rigid containment walls for liquefaction remediation

Many typical ground improvement techniques that are used for liquefaction remediation, such as in situ densification, are not appropriate for application under existing buildings and more novel techniques are required. This paper describes centrifuge tests investigating the performance of rigid containment walls as a liquefaction remediation method. A simple frame structure, founded on a deep layer of loose, liquefiable sand was tested under earthquake shaking. Centrifuge tests were then carried out with containment walls around the base of the structure, extending through the full depth of the liquefiable layer and also partial depth. It is found that rigid containment walls can be very effective in reducing structural settlements primarily by preventing lateral movement of the foundation sand but the impermeability of the walls may also be important. Improvements in structural settlement are observed even when the walls do not extend through the full depth of the liquefiable layer, if the depth of the walls is greater than the depth of the free field liquefaction. In addition, it is found that the accelerations of the structure are not increased, provided there is no rigid, structural connection between the structure and the containment walls. © 2012 World Scientific Publishing Company.

Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates

We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-liquid-solid (VLS) growth mechanism with Au catalysts by metal-organic chemical vapor deposition (MOCVD). By using annealed thin GaAs buffer layers on the surface of Si substrates, most nanowires are grown on the substrates straight, following (111) direction; by using two temperature growth, the nanowires were grown free from structural defects, such as twin defects and stacking faults. Systematic experiments about buffer layers indicate that V/III ratio of precursor and growth temperature can affect the morphology and quality of the buffer layers. Especially, heterostructural buffer layers grown with different V/III ratios and temperatures and in-situ post-annealing step are very helpful to grow well arranged, vertical GaAs nanowires on Si substrates. The initial nanowires having some structural defects can be defect-free by two-temperature growth mode with improved optical property, which shows us positive possibility for optoelectronic device application. ©2010 IEEE.

Soil mix technology for integrated remediation and ground improvement: From laboratory work to field trials

Relatively new in the UK, soil mix technology applied to the in-situ remediation of contaminated land involves the use of mixing tools and additives to construct permeable reactive in-ground barriers and low-permeability containment walls and for hot-spot soil treatment by stabilisation/ solidification. It is a cost effective and versatile approach with numerous environmental advantages. Further commercial advantages can be realised by combining this with ground improvement through the development of a single integrated soil mix technology system which is the core objective of Project SMiRT (Soil Mix Remediation Technology). This is a large UK-based R&D project involving academia-industry collaboration with a number of tasks including equipment development, laboratory treatability studies, field trials, stakeholder consultation and dissemination activities. This paper presents aspects of project SMiRT relating to the laboratory treatability study work leading to the design of the field trials. © 2012 American Society of Civil Engineers.

Novel passive launch scheme for ultimate bandwidth improvement of graded-index multimode fibers

We propose a new practical multimode fiber optical launch scheme, providing near single mode group excitation for >5 times transmission bandwidth improvement. Equalization-free transmission of a 10-Gb/s signal over 220-m fiber is achieved in experimental demonstrations. © 2010 Optical Society of America.