324 resultados para Canada. Canadian Army. Lincoln and Welland Regiment


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We demonstrate that the Mott metal-insulator transition (MIT) in single crystalline VO(2) nanowires is strongly mediated by surface stress as a consequence of the high surface area to volume ratio of individual nanowires. Further, we show that the stress-induced antiferromagnetic Mott insulating phase is critical in controlling the spatial extent and distribution of the insulating monoclinic and metallic rutile phases as well as the electrical characteristics of the Mott transition. This affords an understanding of the relationship between the structural phase transition and the Mott MIT.

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We demonstrate a controllable formation process of wave-like patterns in thermally unstable surface-capped polymer films on a rigid substrate. Self-ordered wave-like structures over a large area can be created by applying a small lateral tension to the film, whereupon it becomes unstable. A clear mode selection process which includes creation, decay and interference between coexisting waves at different annealing conditions has been observed, which makes it possible to restrain the patterns which are formed finally. Our results provide a clear and new evidence of spinodal behaviour in such a film due to thermal instability. Furthermore, we show that the well-controlled patterns generated in such a process can be used to fabricate nanostructures for various applications.

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We have grown epitaxially orientation-controlled monoclinic VO2 nanowires without employing catalysts by a vapor-phase transport process. Electron microscopy results reveal that single crystalline VO2 nanowires having a [100] growth direction grow laterally on the basal c plane and out of the basal r and a planes of sapphire, exhibiting triangular and rectangular cross sections, respectively. In addition, we have directly observed the structural phase transition of single crystalline VO2 nanowires between the monoclinic and tetragonal phases which exhibit insulating and metallic properties, respectively, and clearly analyzed their corresponding relationships using in situ transmission electron microscopy.

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In this paper we explore the possibility of using the equations of a well known compact model for CMOS transistors as a parameterized compact model for a variety of FET based nano-technology devices. This can turn out to be a practical preliminary solution for system level architectural researchers, who could simulate behaviourally large scale systems, while more physically based models become available for each new device. We have used a four parameter version of the EKV model equations and verified that fitting errors are similar to those when using them for standard CMOS FET transistors. The model has been used for fitting measured data from three types of FET nano-technology devices obeying different physics, for different fabrication steps, and under different programming conditions. © 2009 IEEE NANO Organizers.

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We report the use of near-field electrospinning (NFES) as a route to fabricate composite electrodes. Electrodes made of composite fibers of multi-walled carbon nanotubes in polyethylene oxide (PEO) are formed via liquid deposition, with precise control over their configuration. The electromechanical properties of free-standing fibers and fibers deposited on elastic substrates are studied in detail. In particular, we examine the elastic deformation limit of the resulting free-standing fibers and find, similarly to bulk PEO composites, that the plastic deformation onset is below 2% of tensile strain. In comparison, the apparent deformation limit is much improved when the fibers are integrated onto a stretchable, elastic substrate. It is hoped that the NFES fabrication protocol presented here can provide a platform to direct-write polymeric electrodes, and to integrate both stiff and soft electrodes onto a variety of polymeric substrates.