Investigation into IGBT dV/dt during turn-off and its temperature dependence

In many power converter applications, particularly those with high variable loads, such as traction and wind power, condition monitoring of the power semiconductor devices in the converter is considered desirable. Monitoring the device junction temperature in such converters is an essential part of this process. In this paper, a method for measuring the insulated gate bipolar transistor (IGBT) junction temperature using the collector voltage dV/dt at turn-OFF is outlined. A theoretical closed-form expression for the dV/dt at turn-OFF is derived, closely agreeing with experimental measurements. The role of dV/dt in dynamic avalanche in high-voltage IGBTs is also discussed. Finally, the implications of the temperature dependence of the dV/dt are discussed, including implementation of such a temperature measurement technique. © 2006 IEEE.

ANALYTICAL DEVICE FOR TEST FLUIDS, COMPRISES A CONDUCTIVE POLYMER COMPOSITION

A sensor for chemical species or biological species or radiation presenting to test fluid a polymer composition comprises polymer and conductive filler metal, alloy or reduced metal oxide and having a first level of electrical conductance when quiescent and being convertible to a second level of conductance by change of stress applied by stretching or compression or electric field, in which the polymer composition is characterised by at least one of the features in the form of particles at least 90% w/w held on a 100 mesh sieve; and/or comprising a permeable body extending across a channel of fluid flow; and/or affording in-and-out diffusion of test fluid and/or mechanically coupled to a workpiece of polymer swellable by a constituent of test fluid.

Concentration dependence of the Er3+ visible and infrared luminescence in Y2-x Erx O3 thin films on Si

Y2-x Erx O3 thin films, with x varying between 0 and 0.72, have been successfully grown on crystalline silicon (c-Si) substrates by radio-frequency magnetron cosputtering of Y2 O 3 and Er2 O3 targets. As-deposited films are polycrystalline, showing the body-centered cubic structure of Y2 O3, and show only a slight lattice parameter contraction when x is increased, owing to the insertion of Er ions. All the films exhibit intense Er-related optical emission at room temperature both in the visible and infrared regions. By studying the optical properties for different excitation conditions and for different Er contents, all the mechanisms (i.e., cross relaxations, up-conversions, and energy transfers to impurities) responsible for the photoluminescence (PL) emission have been identified, and the existence of two different well-defined Er concentration regimes has been demonstrated. In the low concentration regime (x up to 0.05, Er-doped regime), the visible PL emission reaches its highest intensity, owing to the influence of up-conversions, thus giving the possibility of using Y2-x Er x O3 films as an up-converting layer in the rear of silicon solar cells. However, most of the excited Er ions populate the first two excited levels 4I11/2 and 4I13/2, and above a certain excitation flux a population inversion condition between the former and the latter is achieved, opening the route for the realization of amplifiers at 2.75 μm. Instead, in the high concentration regime (Er-compound regime), an increase in the nonradiative decay rates is observed, owing to the occurrence of cross relaxations or energy transfers to impurities. As a consequence, the PL emission at 1.54 μm becomes the most intense, thus determining possible applications for Y2-x Erx O 3 as an infrared emitting material. © 2009 American Institute of Physics.

Gaussian Process Vine Copulas for Multivariate Dependence

Copulas allow to learn marginal distributions separately from the multivariate dependence structure (copula) that links them together into a density function. Vine factorizations ease the learning of high-dimensional copulas by constructing a hierarchy of conditional bivariate copulas. However, to simplify inference, it is common to assume that each of these conditional bivariate copulas is independent from its conditioning variables. In this paper, we relax this assumption by discovering the latent functions that specify the shape of a conditional copula given its conditioning variables We learn these functions by following a Bayesian approach based on sparse Gaussian processes with expectation propagation for scalable, approximate inference. Experiments on real-world datasets show that, when modeling all conditional dependencies, we obtain better estimates of the underlying copula of the data.

Beyond 2D-grids: A dependence maximization view on image browsing

Ideally, one would like to perform image search using an intuitive and friendly approach. Many existing image search engines, however, present users with sets of images arranged in some default order on the screen, typically the relevance to a query, only. While this certainly has its advantages, arguably, a more flexible and intuitive way would be to sort images into arbitrary structures such as grids, hierarchies, or spheres so that images that are visually or semantically alike are placed together. This paper focuses on designing such a navigation system for image browsers. This is a challenging task because arbitrary layout structure makes it difficult - if not impossible - to compute cross-similarities between images and structure coordinates, the main ingredient of traditional layouting approaches. For this reason, we resort to a recently developed machine learning technique: kernelized sorting. It is a general technique for matching pairs of objects from different domains without requiring cross-domain similarity measures and hence elegantly allows sorting images into arbitrary structures. Moreover, we extend it so that some images can be preselected for instance forming the tip of the hierarchy allowing to subsequently navigate through the search results in the lower levels in an intuitive way. Copyright 2010 ACM.

Electrical transport and percolation in magnetoresistive manganite / insulating oxide composites: case of La0.7Ca0.3MnO3 / Mn3O4

We report the results of electrical resistivity measurements carried out on well-sintered La0.7Ca0.3MnO3 / Mn3O4 composite samples with almost constant composition of the magnetoresistive manganite phase (La0.7Ca0.3MnO3). A percolation threshold (fc) occurs when the La0.7Ca0.3MnO3 volume fraction is ~ 0.19. The dependence of the electrical resistivity as a function of La0.7Ca0.3MnO3 volume fraction (fLCMO) can be described by percolation-like phenomenological equations. Fitting the conducting regime (fLCMO > fc) by the percolation power law returns a critical exponent t value of 2.0 +/- 0.2 at room temperature and 2.6 +/-0.2 at 5 K. The increase of t is ascribed to the influence of the grain boundaries on the electrical conduction process at low temperature.

Anisotropic behaviour in the magnetic field dependence of the low temperature electrical resistance of calcium-doped lanthanum manganate thin films grown by RF magnetron sputtering

We report about the magnetoresistive properties of calcium-doped lanthanum manganate thin films grown by RF magnetron sputtering on single crystalline LaAlO3 and MgO substrates. Two orientations of the magnetic field with respect to the electrical current have been studied: (i) magnetic field in the plane of the film and parallel to the electrical current, and (ii) magnetic field perpendicular to the plane of the film. The film grown on LaAlO 3 is characterised by an unusual magnetoresistive behaviour when the magnetic field is applied perpendicular to the film plane: the appearance of two bumps in the field dependence of the resistance is shown to be related to the occurrence of anisotropic magnetoresistive effects in manganate films. © 2004 Elsevier B.V. All rights reserved.

Effect of95 241Am(n, γ) reaction branching ratio on fuel cycle and reactor design characteristics

The growing interest in innovative reactors and advanced fuel cycle designs requires more accurate prediction of various transuranic actinide concentrations during irradiation or following discharge because of their effect on reactivity or spent-fuel emissions, such as gamma and neutron activity and decay heat. In this respect, many of the important actinides originate from the 241Am(n,γ) reaction, which leads to either the ground or the metastable state of 242Am. The branching ratio for this reaction depends on the incident neutron energy and has very large uncertainty in the current evaluated nuclear data files. This study examines the effect of accounting for the energy dependence of the 241Am(n,γ) reaction branching ratio calculated from different evaluated data files for different reactor and fuel types on the reactivity and concentrations of some important actinides. The results of the study confirm that the uncertainty in knowing the 241Am(n,γ) reaction branching ratio has a negligible effect on the characteristics of conventional light water reactor fuel. However, in advanced reactors with large loadings of actinides in general, and 241Am in particular, the branching ratio data calculated from the different data files may lead to significant differences in the prediction of the fuel criticality and isotopic composition. Moreover, it was found that neutron energy spectrum weighting of the branching ratio in each analyzed case is particularly important and may result in up to a factor of 2 difference in the branching ratio value. Currently, most of the neutronic codes have a single branching ratio value in their data libraries, which is sometimes difficult or impossible to update in accordance with the neutron spectrum shape for the analyzed system.

Inhibitory Synaptic Plasticity - Spike timing dependence and putative network function.

While the plasticity of excitatory synaptic connections in the brain has been widely studied, the plasticity of inhibitory connections is much less understood. Here, we present recent experimental and theoretical □ndings concerning the rules of spike timing-dependent inhibitory plasticity and their putative network function. This is a summary of a workshop at the COSYNE conference 2012.

Growth of straight InAs-on-GaAs nanowire heterostructures.

One of the main motivations for the great interest in semiconductor nanowires is the possibility of easily growing advanced heterostructures that might be difficult or even impossible to achieve in thin films. For III-V semiconductor nanowires, axial heterostructures with an interchange of the group III element typically grow straight in only one interface direction. In the case of InAs-GaAs heterostructures, straight nanowire growth has been demonstrated for growth of GaAs on top of InAs, but so far never in the other direction. In this article, we demonstrate the growth of straight axial heterostructures of InAs on top of GaAs. The heterostructure interface is sharp and we observe a dependence on growth parameters closely related to crystal structure as well as a diameter dependence on straight nanowire growth. The results are discussed by means of accurate first principles calculations of the interfacial energies. In addition, the role of the gold seed particle, the effect of its composition at different stages during growth, and its size are discussed in relation to the results observed.