Correlation between density of states distributions and the fermi level position in interfacial regions of amorphous silicon thin film transistors

This paper investigates the variation of the integrated density of states with conduction activation energy in hydrogenated amorphous silicon thin film transistors. Results are given for two different gate insulator layers, PECVD silicon oxide and thermally grown silicon dioxide. The different gate insulators produce transistors with very different initial transfer characteristics, but the variation of integrated density of states with conduction activation energy is shown to be similar.

Simple model of electronic density of states of graphite and its application to the investigation of superlattices

A model of graphite which is easy to comprehend and simple to implement for the simulation of scanning tunneling microscopy (STM) images is described. This model simulates the atomic density of graphite layers, which in turn correlates with the local density of states. The mechanism and construction of such a model is explained with all the necessary details which have not been explicitly reported before. This model is applied to the investigation of rippling fringes which have been experimentally observed on a superlattice, and it is found that the rippling fringes are not related to the superlattice itself. A superlattice with abnormal topmost layers interaction is simulated, and the result affirms the validity of the moiré rotation pattern assumption. The "odd-even" transition along the atomic rows of a superlattice is simulated, and the simulation result shows that when there is more than one rotated layer at the top, the "odd-even" transition will not be manifest. ©2005 The Japan Society of Applied Physics.

Lowering the excitation threshold of a random laser using the dynamic scattering states of an organosiloxane smectic A liquid crystal

Smectic A liquid crystals, based upon molecular structures that consist of combined siloxane and mesogenic moieties, exhibit strong multiple scattering of light with and without the presence of an electric field. This paper demonstrates that when one adds a laser dye to these compounds it is possible to observe random laser emission under optical excitation, and that the output can be varied depending upon the scattering state that is induced by the electric field. Results are presented to show that the excitation threshold of a dynamic scattering state, consisting of chaotic motion due to electro-hydrodynamic instabilities, exhibits lower lasing excitation thresholds than the scattering states that exist in the absence of an applied electric field. However, the lowest threshold is observed for a dynamic scattering state that does not have the largest scattering strength but which occurs when there is optimization of the combined light absorption and scattering properties. © 2012 American Institute of Physics.