Widening engineering horizons: Addressing the complexity of sustainable development

The complex, fragmented and diverse aspects of a sustainable development perspective are translated into an eight-point framework that defines a problem boundary larger than that traditionally adopted by civil engineers. This leads to practical questions intended to inform engineers who ask 'am I being sustainable?' during project implementation. The value of the questions is tested against a case history of a wastewater treatment project. This demonstrates the relevance of the questions to successive project delivery phases of defining the problem, choosing a solution and implementing that solution through design, construction and operation. The case history highlights that answers to several of the additional questions raised by considering this wider problem space are currently buried within government and clients' policies, regulations and standard practice; these answers may not be accessible to the professional engineer.

The use of fibre optic sensors to monitor pipeline response to tunnelling

This paper describes the use of fibre optic sensing with Brillouin Optical Time-Domain Reflectometry (BOTDR) for near-continuous (distributed) strain monitoring of a large diameter pipeline, buried in predominantly granular material, subjected to a pipe jack tunnelling operation in London Clay. The pipeline, buried at shallow depth, comprises 4.6 m long sections connected with standard bell and spigot type joints, which connect to a continuous steel pipeline. In this paper the suitability of fibre optic sensing with BOTDR for monitoring pipeline behaviour is illustrated. The ability of the fibre optic sensor to detect local strain changes at joints and the subsequent impact on the overall strain profile is shown. The BOTDR strain profile was also used to infer pipe settlement through a process of double-integration and was compared to pipe settlement measurements. The close approximation of the measured pipe settlement provides further confidence in fibre optic strain sensing with BOTDR to investigate the intricacies of pipeline behaviour, pipe-soil interaction and interaction between pipe sections when subjected to ground movement. Copyright ASCE 2006.

Durability study of eleven years old cement-bentonite cut-off wall material

Comprehensive understanding of the long-term performance of cement-bentonite slurry trench cut-off walls is essential as these mixes may degrade when exposed to aggressive environments or when subjected to prolonged drying. A series of wetting-drying and immersion experiments was carried out to evaluate the durability characteristics of laboratory mixed samples and block field samples from 40 days to 11 years of age. For the wetting-drying tests, the samples buried in medium graded sand were subjected to periodical flooding and drying cycles. They were then used for permeability testing and unconfined compressive strength (UCS) testing. For the immersion tests, the samples confined in perforated molds were submerged in magnesium sulfate solution for 16 weeks and their microstructures were then analyzed using X-ray diffraction (XRD) technique. This paper identifies the effects of contaminant exposure on durability of cement-bentonite and the effects of aging by comparing 11 years old samples to younger samples. Test results showed that young or previously contaminated cement-bentonite mixes are more susceptible to sulfate attack than old or less contaminated mixes. Copyright ASCE 2008.

Pipeline uplift response in thawed sandy backfills: Preliminary findings

Offshore and onshore buried pipelines under high operating temperature and pressures may lead to upheaval buckling (UHB) if sufficient soil cover is not present to prevent the upward movement of the pipeline. In regions where seasonal changes involve ground soil undergoing freezing-thawing cycles, the uplift resistance from soil cover may be minimum when the soil is undergoing thawing. This paper presents the results from 2 directly-comparable minidrum centrifuge tests conducted at the Schofield Centre, University of Cambridge, to investigate the difference in uplift resistance responses between fully-saturated and thawed sandy backfill conditions. Both tests were conducted drained at 30g using an 8.6 mm diameter aluminium model pipe, corresponding to a prototype pipe diameter of 258 mm. The soil cover/pipe diameter ratio, H/D, was kept at 1. Fraction E fine silica sand was used as the backfill. Preliminary experimental results indicated that the ultimate uplift resistance of a thawing sand backfill to be lower than that of a fully saturated sand backfill. This suggests that in regions where backfill soil undergoes freeze-thaw cycles, the thawing backfill may be more critical than fully saturated backfill for uplift resistance. The 2-dimensional displacement field during the experiment was accurately measured and analysed using the Particle Image Velocimetry technique. Copyright © 2011 by the International Society of Offshore and Polar Engineers (ISOPE).

Low on-resistance SOI dual-trench-gate MOSFET

A low specific on-resistance (R-{{\rm on}, {\rm sp}}) integrable silicon-on-insulator (SOI) MOSFET is proposed, and its mechanism is investigated by simulation. The SOI MOSFET features double trenches and dual gates (DTDG SOI): an oxide trench in the drift region, a buried gate inset in the oxide trench, and another trench gate (TG) extended to a buried oxide layer. First, the dual gates form dual conduction channels, and the extended gate widens the vertical conduction area; both of which sharply reduce R-{{\rm on}, {\rm sp}}. Second, the oxide trench folds the drift region in the vertical direction, resulting in a reduced device pitch and R-{{\rm on}, {\rm sp}}. Third, the oxide trench causes multidirectional depletion. This not only enhances the reduced surface field effect and thus reshapes the electric field distribution but also increases the drift doping concentration, leading to a reduced R-{{\rm on}, {\rm sp}} and an improved breakdown voltage (BV). Compared with a conventional SOI lateral Double-diffused metal oxide semiconductor (LDMOS), the DTDG MOSFET increases BV from 39 to 92 V at the same cell pitch or decreases R-{{\rm on}, { \rm sp}} by 77% at the same BV by simulation. Finally, the TG extended synchronously acts as an isolation trench between the high/low-voltage regions in a high-voltage integrated circuit, saving the chip area and simplifying the isolation process. © 2006 IEEE.

Upheaval Buckling Assessment Based on Pipeline Features

Upheaval buckling (UHB) is a common design issue for high temperature buried pipelines. This paper highlights some of thekey issues affecting out-of-straightness (OOS) assessment of pipelines. The following factors are discussed; uplift resistancesoil models, uplift resistance in cohesive soils, uplift mobilisation, ratcheting, uplift resistance at low H/D ratios and thecorrect methodology for load factor selection. A framework for determining ratcheting mobilisation is proposed. Furtherresearch is required to verify and validate this proposed framework. UHB assessment of three different diameter pipelineswere carried out using finite element SAGE PROFILE package incorporating pipeline mobilisation and the results arecompared with semi-analytical formulation proposed by Palmer et al. 1990. The paper also presents a summary of as-laidpipeline features based on projects over the past 10 years.

Centrifuge and discrete element modelling of tunnelling effects on pipelines

The paper presents centrifuge test data of the problem of tunnelling effects on buried pipelines and compares them to predictions made using DEM simulations. The paper focuses on the examination of pipeline bending moments, their distribution along the pipe, and their development with tunnel volume loss. Centrifuge results are obtained by PIV analysis and compared to results obtained using the DEM model. The DEM model was built to replicate the centrifuge model as closely as possible and included numerical features formulated specially for this task, such as structural elements to replicate the tunnel and pipeline. Results are extremely encouraging, with deviations between DEM and centrifuge test bending moment results being very small. © 2010 Taylor & Francis Group, London.

Inhomogeneous soils and their effect on ground vibration due to underground railways

Ground vibration due to underground railways is a significant source of disturbance for people living or working near subways. Numerical models are commonly used to predict vibration levels; however, uncertainty inherent to these simulations must be understood to give confidence in the predictions. A semi-analytical approach is developed herein to investigate the effect of uncertainty in soil material properties on the surface vibration of layered halfspaces excited by an underground railway. The half-space is simulated using the thin-layer method coupled with the pipe-in-pipe (PiP) method for determining the load on the buried tunnel. The K-L expansion method is employed to smoothly vary the material properties throughout the soil by up to 10%. The simulation predicts a surface rms velocity variation of 5-10dB compared to a homogeneous, layered halfspace. These results suggest it may be prudent to include a 5dB error band on predicted vibration levels when simulating areas of varied material properties.

On optical reflection at heterojunction interface of thin film solar cells

Heterojunction is an important structure for the development of photovoltaic solar cells. In contrast to homojunction structures, heterojunction solar cells have internal crystalline interfaces, which will reflect part of the incident light, and this has not been considered carefully before though many heterostructure solar cells have been commercialized. This paper discusses the internal reflection for various material systems used for the development of heterostructure-based solar cells. It has been found that the most common heterostructure solar cells have internal reflection less than 2%, while some potential heterojunction solar cells such as ITO/GaAs, ITO/InP, Si/Ge, polymer/semiconductors and oxide semiconductors may have internal reflection as high as 20%. Also it is worse to have a window layer with a lower refractive index than the absorption layer for solar cells. Ignoring this strong internal reflection will lead to severe deterioration and reduction of conversion efficiency; therefore measures have to be taken to minimize or prevent this internal reflection. © 2013 Elsevier B.V.

Effect of soil conditions on uplift of underground structures in liquefied soil

In an earthquake, underground structures located in liquefiable soil deposits are susceptible to floatation following an earthquake event due to their lower unit weight relative to the surrounding saturated soil. Such uplift response of the buoyant structure is influenced by the soil it is buried in. In the case of a liquefiable soil deposit, the soil can lose its shear strength significantly in the event of an earthquake. If the soil liquefies fully, the buoyant structure can float towards the soil surface. However, a partly liquefied soil deposit retains some of its initial shear strength and resists the uplift. This paper discusses the different soil conditions and their influence on the uplift response of buoyant structures. © 2012 World Scientific Publishing Company.

Cryogenic on-chip multiplexer for the study of quantum transport in 256 split-gate devices

We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plateaux at intervals of 2e^2/h. A fabrication-limited yield of 94% is achieved for the array, and a "quantum yield" is also defined, to account for disorder affecting the quantum behaviour of the devices. The quantum yield rose from 55% to 86% after illuminating the sample, explained by the corresponding increase in carrier density and mobility of the two-dimensional electron gas. The multiplexer is a scalable architecture, and can be extended to other forms of mesoscopic devices. It overcomes previous limits on the number of devices that can be fabricated on a single chip due to the number of electrical contacts available, without the need to alter existing experimental set ups.

Growth of straight InAs-on-GaAs nanowire heterostructures.

One of the main motivations for the great interest in semiconductor nanowires is the possibility of easily growing advanced heterostructures that might be difficult or even impossible to achieve in thin films. For III-V semiconductor nanowires, axial heterostructures with an interchange of the group III element typically grow straight in only one interface direction. In the case of InAs-GaAs heterostructures, straight nanowire growth has been demonstrated for growth of GaAs on top of InAs, but so far never in the other direction. In this article, we demonstrate the growth of straight axial heterostructures of InAs on top of GaAs. The heterostructure interface is sharp and we observe a dependence on growth parameters closely related to crystal structure as well as a diameter dependence on straight nanowire growth. The results are discussed by means of accurate first principles calculations of the interfacial energies. In addition, the role of the gold seed particle, the effect of its composition at different stages during growth, and its size are discussed in relation to the results observed.

Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures

The movement of Au catalysts during growth of InAs on GaAs nanowires has been carefully investigated by transmission electron microscopy. It has been found that Au catalysts preferentially stay on { 112 } B GaAs sidewalls. Since a {112} surface is composed of a {111} facet and a {002} facet and since {111} facets are polar facets for the zinc-blende structure, this crystallographic preference is attributed to the different interface energies caused by the different polar facets. We anticipate that these observations will be useful for the design of nanowire heterostructure based devices. © 2009 American Institute of Physics.

Nearly intrinsic exciton lifetimes in single twin-free GaAsAlGaAs core-shell nanowire heterostructures

CW and time-resolved photoluminescence measurements are used to investigate exciton recombination dynamics in GaAsAlGaAs heterostructure nanowires grown with a recently developed technique which minimizes twinning. A thin capping layer is deposited to eliminate the possibility of oxidation of the AlGaAs shell as a source of oxygen defects in the GaAs core. We observe exciton lifetimes of ∼1 ns, comparable to high quality two-dimensional double heterostructures. These GaAs nanowires allow one to observe state filling and many-body effects resulting from the increased carrier densities accessible with pulsed laser excitation. © 2008 American Institute of Physics.

III-V nanowires for optoelectronics

The optical and structural properties of binary and ternary III-V nanowires including GaAs, InP, In(Ga)As, Al(Ga)As, and GaAs(Sb) nanowires by metal-organic chemical vapour deposition are investigated, Au colloidal nanoparticles are employed to catalyze nanowire growth. Zinc blende or wurtzite crystal structures with some stacking faults are observed for these nanowires by high resolution transmission electron microscope. In addition, the properties of heterostructure nanowires including GaAs-AlGaAs core-shell nanowires, GaAs-InAs nanowires, and GaAs-GaSb nanowires are reported. Single nanowire luminescence properties from optically bright InP nanowires are reported. Interesting phenomena such as two-temperature procedure, nanowire height enhancement of isolated ternary InGaAs nanowires, kinking effect of InAs-GaAs heterostructure nanowires, and unusual growth property of GaAs-GaSb heterostructure nanowires are investigated. These nanowires will play an essential role in future optoelectronic devices.