Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters.

Controlling the crystallographic phase purity of III-V nanowires is notoriously difficult, yet this is essential for future nanowire devices. Reported methods for controlling nanowire phase require dopant addition, or a restricted choice of nanowire diameter, and only rarely yield a pure phase. Here we demonstrate that phase-perfect nanowires, of arbitrary diameter, can be achieved simply by tailoring basic growth parameters: temperature and V/III ratio. Phase purity is achieved without sacrificing important specifications of diameter and dopant levels. Pure zinc blende nanowires, free of twin defects, were achieved using a low growth temperature coupled with a high V/III ratio. Conversely, a high growth temperature coupled with a low V/III ratio produced pure wurtzite nanowires free of stacking faults. We present a comprehensive nucleation model to explain the formation of these markedly different crystal phases under these growth conditions. Critical to achieving phase purity are changes in surface energy of the nanowire side facets, which in turn are controlled by the basic growth parameters of temperature and V/III ratio. This ability to tune crystal structure between twin-free zinc blende and stacking-fault-free wurtzite not only will enhance the performance of nanowire devices but also opens new possibilities for engineering nanowire devices, without restrictions on nanowire diameters or doping.

Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores.

GaAs was radially deposited on InAs nanowires by metal-organic chemical vapor deposition and resultant nanowire heterostructures were characterized by detailed electron microscopy investigations. The GaAs shells have been grown in wurtzite structure, epitaxially on the wurtzite structured InAs nanowire cores. The fundamental reason of structural evolution in terms of material nucleation and interfacial structure is given.

Growth, structural and optical properties of III-V nanowires for optoelectronic applications

We investigate the growth of III-V nanowires by MOCVD and the structural and optical properties of these nanowires. Binary and ternary nanowires of GaAs, InAs, InP, AlGaAs and InGaAs are achieved. We discuss the nucleation and growth issues involved in fabricating high quality nanowires suitable for device applications. We have fabricated and characterised a variety of axial and radial heterostructures including GaAs/InGaAs superlattices, and GaAs/AlGaAs core-shell and core-multishell nanowires. © 2007 IEEE.

Growth of III-V nanowires and nanowire heterostructures by metalorganic chemical vapor deposition

We have investigated the structural and optical properties of III-V nanowires, and axial and radial nanowire heterostructures, fabricated by metalorganic chemical vapor deposition. In addition to binary nanowires, such as GaAs, InAs, and InP, we have demonstrated ternary InGaAs and AlGaAs nanowires. Core-shell nanowires consisting of GaAs cores with AlGaAs shells, and core-multishell nanowires with alternating shells of AlGaAs and GaAs, exhibit strong photoluminescence. Axial segments of InGaAs have been incorporated within GaAs nanowires to form GaAs/InGaAs nanowire superlattices. We have developed a two-temperature growth procedure to optimize nanowire morphology. An initial high temperature step promotes nucleation and epitaxial growth of straight (111)B-oriented nanowires. Lower temperatures are employed subsequently, to minimise radial growth. © 2007 IEEE.

Optimised two-temperature growth of GaAs nanowire s by metalorganic chemical vapour deposition

We report a two-temperature procedure for the growth of GaAs nanowires by metalorganic chemical vapour deposition. An initial high temperature step affords effective nucleation and promotes epitaxial growth of straight (111)B-oriented nanowires. Lower temperatures are employed subsequently, to minimise nanowire tapering during growth. © 2006 IEEE.

Catalyst composition and impurity-dependent kinetics of nanowire heteroepitaxy.

The mechanisms and kinetics of axial Ge-Si nanowire heteroepitaxial growth based on the tailoring of the Au catalyst composition via Ga alloying are studied by environmental transmission electron microscopy combined with systematic ex situ CVD calibrations. The morphology of the Ge-Si heterojunction, in particular, the extent of a local, asymmetric increase in nanowire diameter, is found to depend on the Ga composition of the catalyst, on the TMGa precursor exposure temperature, and on the presence of dopants. To rationalize the findings, a general nucleation-based model for nanowire heteroepitaxy is established which is anticipated to be relevant to a wide range of material systems and device-enabling heterostructures.

Biomimetic mineral-protein composites formed by an automated alternate soaking process

Biomineralized composite materials found in nature have a compromise of good mechanical properties and relatively small embodied energies in the process of their formation. The Alternate Soaking Process (ASP) is a laboratory technique that has only recently been applied to replicating composite biomineralization. The nexus of the ASP - heterogeneous nucleation - makes it ideal for replicating biominerals where the mineral is templated onto an organic substrate, such as occurs in avian eggshell. Here we demonstrate the deposition of a calcium carbonate gelatin composite on either glass cover slips or demineralized eggshell membranes using an automated ASP. SEM images and FTIR spectra of the resulting mineral show that by altering the amount of gelatin in the growth solutions the final organic component can be controlled accurately in the range of 1-10%, similar to that of natural eggshell. This study shows for the first time the co-precipitation of a CaCO3 - gelatin composite by an ASP and that the organic fraction of this mineral can be tuned to mimic that of natural biomineralized composites. © 2012 Materials Research Society.

Progress in the understanding of Ni silicide formation for advanced MOS structures

Metallic silicides have been used as contact materials on source/drain and gate in metal-oxide semiconductor (MOS) structure for 40 years. Since the 65 nm technology node, NiSi is the preferred material for contact in microelectronic due to low resistivity, low thermal budget, and low Si consumption. Ni(Pt)Si with 10 at.% Pt is currently employed in recent technologies since Pt allows to stabilize NiSi at high temperature. The presence of Pt and the very low thickness (<10 nm) needed for the device contacts bring new concerns for actual devices. In this work, in situ techniques [X-ray diffraction (XRD), X-ray reflectivity (XRR), sheet resistance, differential scanning calorimetry (DSC)] were combined with atom probe tomography (APT) to study the formation mechanisms as well as the redistribution of dopants and alloy elements (Pt, Pd.) during the silicide formation. Phenomena like nucleation, lateral growth, interfacial reaction, diffusion, precipitation, and transient phase formation are investigated. The effect of alloy elements (Pt, Pd.) and dopants (As, B.) as well as stress and defects induced by the confinement in devices on the silicide formation mechanism and alloying element redistribution is examined. In particular APT has been performed for the three-dimensional (3D) analysis of MOSFET at the atomic scale. The advances in the understanding of the mechanisms of formation and redistribution are discussed. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Twin plane re-entrant mechanism for catalytic nanowire growth.

A twin-plane based nanowire growth mechanism is established using Au catalyzed Ge nanowire growth as a model system. Video-rate lattice-resolved environmental transmission electron microscopy shows a convex, V-shaped liquid catalyst-nanowire growth interface for a ⟨112⟩ growth direction that is composed of two Ge {111} planes that meet at a twin boundary. Unlike bulk crystals, the nanowire geometry allows steady-state growth with a single twin boundary at the nanowire center. We suggest that the nucleation barrier at the twin-plane re-entrant groove is effectively reduced by the line energy, and hence the twin acts as a preferential nucleation site that dictates the lateral step flow cycle which constitutes nanowire growth.

Unsteady numerical study of wet steam flow in a low pressure steam turbine

In steam power plants condensation already starts in the flow path of the low pressure part of the steam turbine, which leads to a complex three-dimensional two-phase flow. Wetness losses are caused due to thermodynamic and mechanical relaxation processes during condensation and droplet transport. The present investigation focuses on the unsteady effects due to rotor-stator interaction on the droplet formation process. Results of unsteady three dimensional flow simulations of a two-stage steam turbine are presented, whereby this is the first time that non-equilibrium condensation is considered in such simulations. The numerical approach is based on RANS equations, which are extended by a wet steam specific nucleation and droplet growth model. Despite the use of a high performance cluster the unsteady simulation has a considerably high simulation time of approximately 60 days by use of 48 CPUs. © Springer-Verlag Berlin Heidelberg 2012.

Modelling and validation of wet steam flow in a low pressure steam turbine

Results of numerical investigations of the wet steam flow in a three stage low pressure steam turbine test rig are presented. The test rig is a scale model of a modern steam turbine design and provides flow measurements over a range of operating conditions which are used for detailed comparisons with the numerical results. For the numerical analysis a modern CFD code with user defined models for specific wet steam modelling is used. The effect of different theoretical models for nucleation and droplet growth are examined. It is shown that heterogeneous condensation is highly dependent on steam quality and, in this model turbine with high quality steam, a homogeneous theory appears to be the best choice. The homogeneous theory gives good agreement between the test rig traverse measurements and the numerical results. The differences in the droplet size distribution of the three stage turbine are shown for different loads and modelling assumptions. The different droplet growth models can influence the droplet size by a factor of two. An estimate of the influence of unsteady effects is made by means of an unsteady two-dimensional simulation. The unsteady modelling leads to a shift of nucleation into the next blade row. For the investigated three stage turbine the influence due to wake chopping on the condensation process is weak but to confirm this conclusion further investigations are needed in complete three dimensions and on turbines with more stages. Copyright © 2011 by ASME.

Effect of catalyst pretreatment on chirality-selective growth of single-walled carbon nanotubes

We show that catalyst pretreatment conditions can have a profound effect on the chiral distribution in single-walled carbon nanotube chemical vapor deposition. Using a SiO2-supported cobalt model catalyst and pretreatment in NH3, we obtain a comparably narrowed chiral distribution with a downshifted tube diameter range, independent of the hydrocarbon source. Our findings demonstrate that the state of the catalyst at the point of carbon nanotube nucleation is of fundamental importance for chiral control, thus identifying the pretreatment atmosphere as a key parameter for control of diameter and chirality distributions. © 2014 American Chemical Society.

Experimental study of the effects of temperature variation on droplet size and wetness fraction in a low-pressure model steam turbine

The three-stage low-pressure model steam turbine at the Institute of Thermal Turbomachinery and Machinery Laboratory (ITSM) was used to study the impact of three different steam inlet temperatures on the homogeneous condensation process and the resulting wetness topology. The droplet spectrum as well as the particle number concentration were measured in front of the last stage using an optical-pneumatic probe. At design load, condensation starts inside the stator of the second stage. A change in the steam inlet temperature is able to shift the location of condensation onset within the blade row up- or downstream and even into adjoining blade passages, which leads to significantly different local droplet sizes and wetness fractions due to different local expansion rates. The measured results are compared to steady three-dimensional computational fluid dynamics calculations. The predicted nucleation zones could be largely confirmed by the measurements. Although the trend of measured and calculated droplet size across the span is satisfactory, there are considerable differences between the measured and computed droplet spectrum and wetness fractions. © IMechE 2013 Reprints and permissions: sagepub.co.uk/ journalsPermissions.nav.

In situ intercalation dynamics in inorganic-organic layered perovskite thin films.

The properties of layered inorganic semiconductors can be manipulated by the insertion of foreign molecular species via a process known as intercalation. In the present study, we investigate the phenomenon of organic moiety (R-NH3I) intercalation in layered metal-halide (PbI2)-based inorganic semiconductors, leading to the formation of inorganic-organic (IO) perovskites [(R-NH3)2PbI4]. During this intercalation strong resonant exciton optical transitions are created, enabling study of the dynamics of this process. Simultaneous in situ photoluminescence (PL) and transmission measurements are used to track the structural and exciton evolution. On the basis of the experimental observations, a model is proposed which explains the process of IO perovskite formation during intercalation of the organic moiety through the inorganic semiconductor layers. The interplay between precursor film thickness and organic solution concentration/solvent highlights the role of van der Waals interactions between the layers, as well as the need for maintaining stoichiometry during intercalation. Nucleation and growth occurring during intercalation matches a Johnson-Mehl-Avrami-Kolmogorov model, with results fitting both ideal and nonideal cases.