109 resultados para Annaberg (Germany : Landkreis). K. Realgymnasium
Resumo:
This issue of Superconductor Science and Technology is edited by Murakami, M., Cardwell, D.A., Salama, K., Krabbes, G., Habisreuther, T. and Gawalek, W. It contains 42 selected papers from the PASREG 2003 international workshop, held in Jena, Germany, 30 June - 2 July 2003. The workshop was organised by the Institut fur Physikalische Hochtechnologie, Jena, Germany and was the fourth in the series of workshops first held in Cambridge, UK, in 1997.
Resumo:
The promising theoretical properties of diamond, together with the recent advances in producing high-quality single crystal diamond substrates, have increased the interest in using diamond in power electronic devices. This paper presents numerical and experimental off-state results for a diamond Schottky barrier diode (SBD), one of most studied unipolar devices in diamond. Finding a suitable termination structure is an essential step towards designing a high voltage diamond device. The ramp oxide structure shows very encouraging electronic performance when used to terminate diamond SBDs. High-k dielectrics are also considered in order to further improve the reliability and electrical performance of the structure. © 2007 Elsevier B.V. All rights reserved.
Resumo:
This paper presents a comparison between SiC and diamond Schottky barrier diodes using the oxide ramp termination. The influences of the dielectric thickness and relative permittivity on the diode's electrical performance are investigated. Typical commercial drift layer parameters are used for this study. The extension of the space charge area throughout the drift region and the current distribution at breakdown are shown. The efficiency of the termination is also evaluated for both SiC and diamond diodes. © (2009) Trans Tech Publications, Switzerland.
