81 resultados para Analytical philosophy


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A sensor for chemical species or biological species or radiation presenting to test fluid a polymer composition comprises polymer and conductive filler metal, alloy or reduced metal oxide and having a first level of electrical conductance when quiescent and being convertible to a second level of conductance by change of stress applied by stretching or compression or electric field, in which the polymer composition is characterised by at least one of the features in the form of particles at least 90% w/w held on a 100 mesh sieve; and/or comprising a permeable body extending across a channel of fluid flow; and/or affording in-and-out diffusion of test fluid and/or mechanically coupled to a workpiece of polymer swellable by a constituent of test fluid.

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Our purpose is to not to define a particular philosophy of management, but rather to demonstrate some of the ways in which philosophy – ethics, metaphysics, epistemology, logic and æsthetics – contributes to the practice of management. We identify a number of contemporary management questions, procedures or issues where the application of philosophical approaches are relevant, and show how philosophical skills, an understanding of philosophical principles or exposure to philosophical discussion can contribute to improved management practice. In some ways the paper is a report on progress in the quest begun by Nigel Laurie and Christopher Cherry in the first issue of Philosophy of Management, formerly Reason in Practice (2001) when they asked why philosophers have interested themselves so little in the entire field of management. We include some examples where philosophers have written about management, some where managers have shown the direct impact of philosophy on management effectiveness and some where potential remains. In much we see links to process philosophy, and to the need for conversation and reflection by and between managers and philosophers. This does not of itself show how philosophy can contribute to management education. A brief final section discusses the way in which moral creativity skills can be developed through reflection, and describes how this has been done in the Manufacturing Leaders’ Programme at the Institute for Manufacturing at Cambridge and in the International Management Ethics & Values course taught to undergraduate management students in Adelaide, Singapore and Hong Kong. This will be taken up in a subsequent paper.

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A steady-state, physically-based analytical model for the Trench Insulated Gate Bipolar Transistor which accounts for a combined PIN diode - PNP transistor carrier dynamics is proposed. Previous models (i.e. PIN model and PNP transistor model) cannot account properly for the carrier dynamics in Trench IGBT since neither the PNP transistor nor the PIN diode effect can be neglected. An optimized Trench IGBT with a large ratio between the accumulation layer and the cell size leads to substantially improved on-state characteristics, which makes the Trench IGBT potentially the most attractive device in the area of high voltage fast switching devices.

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An analytical model for the electric field and the breakdown voltage (BV) of an unbalanced superjunction (SJ) device is presented in this paper. The analytical technique uses a superposition approach treating the asymmetric charge in the pillars as an excess charge component superimposed on a balanced charge component. The proposed double-exponentialmodel is able to accurately predict the electric field and the BV for unbalanced SJ devices in both punch through and non punch through conditions. The model is also reasonably accurate at extremely high levels of charge imbalance when the devices behave similarly to a PiN diode or to a high-conductance layer. The analytical model is compared against numerical simulations of charge unbalanced SJ devices and against experimental results. © 2009 IEEE.

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Stone masonry spires are vulnerable to seismic loading. Computational methods are often used to predict the dynamic linear elastic response of masonry towers and spires, but this approach is only applicable until the first masonry joint begins to open, limiting the ability to predict collapse. In this paper, analytical modeling is used to investigate the uplift, rocking and collapse of stone spires. General equations for static equilibrium of the spire under lateral acceleration are first presented, and provide a reasonable lower bound for predicting collapse. The dynamic response is then considered through elastic modal analysis and rigid body rocking. Together, these methods are used to provide uplift curves and single impulse overturning collapse curves for a complete range of possible spire geometries. Results are used to evaluate the historic collapse of two specific stone spires. © 2012 Elsevier Ltd.

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This paper presents an analytical modeling technique for the simulation of long-range ultrasonic guided waves in structures. The model may be used to predict the displacement field in a prismatic structure arising from any excitation arrangement and may therefore be used as a tool to design new inspection systems. It is computationally efficient and relatively simple to implement, yet gives accuracy similar to finite element analysis and semi-analytical finite element analysis methods. The model has many potential applications; one example is the optimization of part-circumferential arrays where access to the full circumference of the pipe is restricted. The model has been successfully validated by comparison with finite element solutions. Experimental validation has also been carried out using an array of piezoelectric transducer elements to measure the displacement field arising from a single transducer element in an 88.9-mm-diameter pipe. Good agreement has been obtained between the two models and the experimental data.

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We present an analytical field-effect method to extract the density of subgap states (subgap DOS) in amorphous semiconductor thin-film transistors (TFTs), using a closed-form relationship between surface potential and gate voltage. By accounting the interface states in the subthreshold characteristics, the subgap DOS is retrieved, leading to a reasonably accurate description of field-effect mobility and its gate voltage dependence. The method proposed here is very useful not only in extracting device performance but also in physically based compact TFT modeling for circuit simulation. © 2012 IEEE.