Ultrafast sputtered ZnO thin films with high kT for acousticwave device applications

The fabrication of high frequency acoustic wave devices requires thedevelopment of thin films of piezoelectric materials with improved morphologicaland electro-acoustical properties. In particular, the crystalline orientationof the films, surface morphology, film stress and electrical resistivity are keyissues for the piezoelectric response. In the work reported here, ZnO thinfilms were deposited at high rates (>50 nm/min) using a novel process knownas the High Target Utilisation Sputtering (HiTUS). The films deposited possessexcellent crystallographic orientation, high resistivity (>109ωm), and exhibit surface roughness and film stress one order of magnitudelower than films grown with standard magnetron sputtering. The electromechanicalcoupling coefficient of the films, kT, was precisely calculated byimplementing the resonant spectrum method, and was found to be at least 6%higher than any previously reported kT of magnetron sputtered filmsto the Authors' knowledge. The low film stress of the film is deemed as one ofthe most important factors responsible for the high k T valueobtained. © 2010 IEEE.

Dynamic analysis of the brushless doubly-fed induction generator during symmetrical three-phase voltage dips

The Brushless Doubly-Fed Induction Generator (BDFIG) shows commercial promise as replacement for doublyfed slip-ring generators for wind power applications by offering reduced capital and operational costs due to its brushless operation. In order to facilitate its commercial deployment, the capabilities of the BDFIG system to comply with grid code requirements have to be assessed. This paper, for the first time, studies the performance of the BDFIG under grid fault ride-through and presents the dynamic behaviour of the machine during three-phase symmetrical voltage dips. Both full and partial voltage dips are studied using a vector model. Simulation and experimental results are provided for a 180 frame BDFIG.

Tailoring the morphology of carbon nanotube assemblies using microgradients in the catalyst thickness

In addition to the structural control of individual carbon nanotubes (CNTs), the morphological control of their assemblies is crucial to realize miniaturized CNT devices. Microgradients in the thickness of catalyst are used to enrich the variety of available self-organized morphologies of CNTs. Microtrenches were fabricated in gate/spacer/cathode trilayers using a conventional self-aligned top-down process and catalyst exhibiting a microgradient in its thickness was formed on the cathode by sputter deposition through gate slits. CNTs, including single-walled CNTs, of up to 1μm in length were grown within 5-15 s by chemical vapor deposition. The tendency of thin CNTs to aggregate caused interactions between CNTs with different growth rates, yielding various morphologies dependent on the thickness of the catalyst. The field emission properties of several types of CNT assemblies were evaluated. The ability to produce CNTs with tailored morphologies by engineering the spatial distribution of catalysts will enhance their performance in devices. © 2011 The Japan Society of Applied Physics.

Deposition of c-axis orientation aluminum nitride films on flexible polymer substrates by reactive direct-current magnetron sputtering

Aluminum nitride (AlN) piezoelectric thin films with c-axis crystal orientation on polymer substrates can potentially be used for development of flexible electronics and lab-on-chip systems. In this study, we investigated the effects of deposition parameters on the crystal structure of AlN thin films on polymer substrates deposited by reactive direct-current magnetron sputtering. The results show that low sputtering pressure as well as optimized N 2/Ar flow ratio and sputtering power is beneficial for AlN (002) orientation and can produce a highly (002) oriented columnar structure on polymer substrates. High sputtering power and low N 2/Ar flow ratio increase the deposition rate. In addition, the thickness of Al underlayer also has a strong influence on the film crystallography. The optimal deposition parameters in our experiments are: deposition pressure 0.38 Pa, N 2/Ar flow ratio 2:3, sputtering power 414 W, and thickness of Al underlayer less than 100 nm. © 2012 Elsevier B.V. All rights reserved.

Orthorhombic α-moo 3 coatings with lath-shaped morphology developed by SPPS: Applications to super-capacitors

Electrical double-layer capacitors owe their large capacitance to the formation of a double-layer at the electrode/electrolyte interface of high surface area carbon-based electrode materials. Greater electrical energy storage capacity has been attributed to transition metal oxides/nitrides that undergo fast, reversible redox reactions at the electrode surface (pseudo-capacitive behavior) in addition to forming electrical double-layers. Solution Precursor Plasma Spray (SPPS) has shown promise for depositing porous, high surface area transition metal oxides. This investigation explored the potential of SPPS to fabricate a-MoO 3 coatings with micro-structures suitable for use as super-capacitor electrodes. The effects of number of spray passes, spray distance, solution concentration, flow rate and spray velocity on the chemistry and micro-structure of the a-MoO 3 deposits were examined. DTA/TGA, SEM, XRD, and electrochemical analyses were performed to characterize the coatings. The results demonstrate the importance of post-deposition heating of the deposit by subsequent passes of the plasma on the coating morphology. © ASM International.

Room-temperature remote-plasma sputtering of c-axis oriented zinc oxide thin films

Highly c-axis oriented ZnO films have been deposited at room temperature with high rates (∼50 nm·min -1) using an innovative remote plasma sputtering configuration, which allows independent control of the plasma density and the sputtering ion energy. The ZnO films deposited possess excellent crystallographic orientation, high resistivity (>10 9 Ω·m), and exhibit very low surface roughness. The ability to increase the sputtering ion energy without causing unwanted Ar + bombardment onto the substrate has been shown to be crucial for the growth of films with excellent c-axis orientation without the need of substrate heating. In addition, the elimination of the Ar + bombardment has facilitated the growth of films with very low defect density and hence very low intrinsic stress (100 MPa for 3 μm-thick films). This is over an order of magnitude lower than films grown with a standard magnetron sputtering system. © 2012 American Institute of Physics.

Thermal evolution of Er silicate thin films grown by rf magnetron sputtering

Stoichiometric Er silicate thin films, monosilicate (Er2SiO 5) and disilicate (Er2Si2O7), have been grown on c-Si substrates by rf magnetron sputtering. The influence of annealing temperature in the range 1000-1200 °C in oxidizing ambient (O 2) on the structural and optical properties has been studied. In spite of the known reactivity of rare earth silicates towards silicon, Rutherford backscattering spectrometry shows that undesired chemical reactions between the film and the substrate can be strongly limited by using rapid thermal treatments. Monosilicate and disilicate films crystallize at 1100 and 1200 °C, respectively, as shown by x-ray diffraction analysis; the crystalline structures have been identified in both cases. Moreover, photoluminescence (PL) measurements have demonstrated that the highest PL intensity is obtained for Er2Si2O7 film annealed at 1200 °C. In fact, this treatment allows us to reduce the defect density in the film, in particular by saturating oxygen vacancies, as also confirmed by the increase of the lifetime of the PL signal. © 2008 IOP Publishing Ltd.

The influence of substrate on the properties of Er2O3 films grown by magnetron sputtering

The structural properties and the room temperature luminescence of Er2O3 thin films deposited by RF magnetron sputtering have been studied. Films characterized by good morphological properties have been obtained by using a SiO2 interlayer between the film and the Si substrate. The evolution of the properties of the Er2O3 films due to rapid thermal annealing processes in O2 ambient performed at temperatures in the range 800-1200 °C has been investigated in details. The existence of well-defined annealing conditions (temperature of 1100 °C or higher) allowing to avoid the occurrence of extensive chemical reactions with the oxidized substrate has been demonstrated and an increase of the photoluminescence (PL) intensity by about a factor of 40 with respect to the as deposited material has been observed. The enhanced efficiency of the photon emission process has been correlated with the longer lifetime of the PL signal. The same annealing processes are less effective when Er2O3 is deposited on Si. In this latter case interfacial reactions and pit formation occur, leading to a material characterized by stronger non-radiative phenomena that limit the PL efficiency. © 2006 Elsevier B.V. All rights reserved.

Optical and structural properties of Er2O3 films grown by magnetron sputtering

The structural properties and the room temperature luminescence of Er 2O3 thin films deposited by magnetron sputtering have been studied. In spite of the well-known high reactivity of rare earth oxides towards silicon, films characterized by good morphological properties have been obtained by using a SiO2 interlayer between the film and the silicon substrate. The evolution of the properties of the Er2O3 films due to thermal annealing processes in oxygen ambient performed at temperatures in the range of 800-1200°C has been investigated in detail. The existence of well defined annealing conditions (rapid treatments at a temperature of 1100°C or higher) allowing to avoid the occurrence of extensive chemical reactions with the oxidized substrate has been demonstrated; under these conditions, the thermal process has a beneficial effect on both structural and optical properties of the film, and an increase of the photoluminescence (PL) intensity by about a factor of 40 with respect to the as-deposited material has been observed. The enhanced efficiency of the photon emission process has been correlated with the longer lifetime of the PL signal. Finally, the conditions leading to a reaction of Er2O3 with the substrate have been also identified, and evidences about the formation of silicate-like phases have been collected. © 2006 American Institute of Physics.

Crowbarless fault ride-through of the brushless doubly fed induction generator in a wind turbine under symmetrical voltage dips

The brushless doubly fed induction generator (BDFIG) shows commercial promise for wind power generation due to its lower cost and higher reliability when compared with the conventional DFIG. In the most recent grid codes, wind generators are required to be able to ride through a low-voltage fault and meet the reactive current demand from the grid. A low-voltage ride-through (LVRT) capability is therefore important for wind generators which are integrated into the grid. In this paper, the authors propose a control strategy enabling the BDFIG to successfully ride through a symmetrical voltage dip. The control strategy has been implemented on a 250-kW BDFIG, and the experimental results indicate that the LVRT is possible without a crowbar. © 1982-2012 IEEE.