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A continuous Gaussian profile matched to the fundamental mode was etched onto the aperture of a vertical cavity surface emitting laser (VCSEL). Single Gaussian spot emission was achieved over the entire operating current range.

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A new method has been used to design a power semiconductor device which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between the IGBT and thyristor modes of operation. This paper discusses single-gated devices with multiple modes and aspects of their switching behaviour.