The preparation, characterization and tribological properties of TA-C : H deposited using an electron cyclotron wave resonance plasma beam source

A compact electron cyclotron wave resonance (ECWR) source has been developed for the high rate deposition of hydrogenated tetrahedral amorphous carbon (ta-C:H). The ECWR provides growth rates of up to 900 Å/min over a 4″ diameter and an independent control of the deposition rate and ion energy. The ta-C:H was deposited using acetylene as the source gas and was characterized in terms of its sp3 content, mass density, intrinsic stress, hydrogen content, C-H bonding, Raman spectra, optical gap, surface roughness and friction coefficient. The results obtained indicated that the film properties were maximized at an ion energy of approximately 167 eV, corresponding to an energy per daughter carbon ion of 76 eV. The relationship between the incident ion energy and film densification was also explained in terms of the subsurface implantation of carbon ions into the growing film.

Fabrication of 25nm wide gold lines using nanometer scale lithography and ionized cluster beam deposition

It becomes increasingly difficult to make continuous metal lines with well defined thickness and edges by the lift-off technique as the line width is decreased. We describe in this paper a technique in which the combination of high resolution electron beam lithography and ionized cluster beam (ICB) deposition has enabled very high quality gold lines ({all equal to}25nm wide) to be obtained on thick single crystal silicon substrates. © 1990.

Investigating carbon materials for use as the electron emission source in a parallel electron-beam lithography system

A microelectronic parallel electron-beam lithography system using an array of field emitting microguns is currently being developed. This paper investigates the suitability of various carbon based materials for the electron source in this device, namely tetrahedrally bonded amorphous carbon (ta-C), nanoclustered carbon and carbon nanotubes. Ta-C was most easily integrated into a gated field emitter structure and various methods, such as plasma and heavy ion irradiation, were used to induce emission sites in the ta-C. However, the creation of such emission sites at desired locations appeared to be difficult/random in nature and thus the material was unsuitable for this application. In contrast, nanoclustered carbon material readily field emits with a high site density but the by-products from the deposition process create integration issues when using the material in a microelectronic gated structure. Carbon nanotubes are currently the most promising candidate for use as the emission source. We have developed a high yield and clean (amorphous carbon by-product free) PECVD process to deposit single free standing nanotubes at desired locations with exceptional uniformity in terms of nanotube height and diameter. Field emission from an array of nanotubes was also obtained. © 2001 Elsevier Science B.V.

On-line topographic analysis in the SEM

A novel method for on-line topographic analysis of rough surfaces in the SEM has been investigated. It utilises a digital minicomputer configured to act as a programmable scan generator and automatic focusing unit. The computer is coupled to the microscope through digital-to-analogue converters which enable it to generate ramp waveforms allowing the beam to be scanned over a small sub-region of the field under program control. A further digital-to-analogue converter regulates the current supply to the objective lens of the microscope. The video signal is sampled by means of an analogue-to-digital converter and the resultant binary code stored in the computer's memory as an array of numbers describing relative image intensity. Computations based on the intensity gradient of the image allow the objective lens current to be found for the in-focus condition, which may be related to the working distance through a previous calibration experiment. The sensitivity of the method for detecting small height changes is theoretically of the order of 1 μm. In practice the operator specifies features of interest by means of a mobile spot cursor injected into the SEM display screen, or he may scan the specimen at sub-regions corresponding to pre-determined points on a regular grid defined by him. The operation then proceeds under program control. | A novel method for on-line topographic analysis of rough surfaces in the SEM has been investigated. It utilizes a digital minicomputer configured to act as a programmable scan generator and automatic focusing unit. A further digital-to-analog converter regulates the current supply to the objective lens of the microscope. The video signal is sampled by means of an analog-to-digital converter and the resultant binary code stored in the computer's memory as an array of numbers describing relative image intensity. The sensitivity of the method for detecting small height changes is theroretically of the order of 1 mu m.

TECHNIQUES FOR PRODUCING DEFECT-FREE SOI BY DUAL ELECTRON BEAM HEATING OF DEPOSITED POLYSILICON.

Advances in the dual electron-beam recrystallization technique arising from the fast scanning of a line beam parallel to the edges of narrow seeding windows are described. The resultant recrystallized layers are essentially defect-free, have good surface flatness, and cover large areas.

Formation of silicon-on-insulator layers by electron beam recrystallization

This paper outlines the development of the electron beam recrystallization approach to the formation of silicon-on-insulator layers. The technique of recrystallizing seeded layers by a line electron beam has been widely adopted. Present practice in electron beam recrystallization is reviewed, both from materials and process points of view. Applications of silicon-on-insulator substrates formed in this way are described, particularly in three-dimensional integration. © 1988.

In process laser beam diagnostics (403)

Laser beam diagnosis is usually carried out off-line in order to minimise the disruption to the process being carried out. This paper presents the results of a fractional sampling device for a high power beam diagnosis system capable of measuring in process beam properties such as beam diameter, intensity and beam position. The paper discusses the application of this sampling technique for monitoring beam properties during the laser materials processing operation.

In process laser beam diagnostics (403)

Laser beam diagnosis is usually carried out off-line in order to minimise the disruption to the process being carried out. This paper presents the results of a fractional sampling device for a high power beam diagnosis system capable of measuring in process beam properties such as beam diameter, intensity and beam position. The paper discusses the application of this sampling technique for monitoring beam properties during the laser materials processing operation.

A non-intrusive in situ method of optical beam profiling in LCOS-based optical fiber switches

This paper proposed a non-intrusive method of measuring the optical beam profile at the surface of the liquid crystal on silicon (LCOS) device in an optical fiber switch. This method is based on blazed grating and can be employed in situ (on-line) for two-dimensional beam profiling in the LCOS-based optical fiber switches without introducing additional components or rearranging the system. The measured beam radius was in excellent agreement with that measured by the knife-edge technique. © 2013 Elsevier Ltd.