200V superjunction lateral IGBT fabricated on partial SOI

A 200V lateral insulated gate bipolar transistor (LIGBT) was successfully developed using lateral superjunction (SJ) in 0.18μm partial silicon on insulator (SOI) HV process. The results presented are based on extensive experimental measurements and numerical simulations. For an n-type lateral SJ LIGBT, the p layer in the SJ drift region helps in achieving uniform electric field distribution. Furthermore, the p-pillar contributes to the on-state current. Furthermore, the p-pillar contributes to sweep out holes during the turn-off process, thus leading to faster removal of plasma. To realize this device, one additional mask layer is required in the X-FAB 0.18μm partial SOI HV process. © 2013 IEEE.

Unified form language: A domain-specific language for weak formulations of partial differential equations

We present the Unified Form Language (UFL), which is a domain-specific language for representing weak formulations of partial differential equations with a view to numerical approximation. Features of UFL include support for variational forms and functionals, automatic differentiation of forms and expressions, arbitrary function space hierarchies formultifield problems, general differential operators and flexible tensor algebra. With these features, UFL has been used to effortlessly express finite element methods for complex systems of partial differential equations in near-mathematical notation, resulting in compact, intuitive and readable programs. We present in this work the language and its construction. An implementation of UFL is freely available as an open-source software library. The library generates abstract syntax tree representations of variational problems, which are used by other software libraries to generate concrete low-level implementations. Some application examples are presented and libraries that support UFL are highlighted. © 2014 ACM.

Analysis on the off-state design and characterization of LIGBTs in partial SOI technology

Classical high voltage devices fabricated on SOI substrates suffer from a backside coupling effect which could result in premature breakdown. This phenomenon becomes more prominent if the structure is an IGBT which features a p-type injector. To suppress the premature breakdown due to crowding of electro-potential lines within a confined SOI/buried oxide structure, the partial SOI (PSOI) technique is being introduced. This paper analyzes the off-state behavior of an n-type Superjunction (SJ) LIGBT fabricated on PSOI substrate. During the initial development stage the SJ LIGBT was found to have very high leakage. This was attributed to the back and side coupling effects. This paper discusses these effects and shows how this problem could be successfully addressed with minimal modifications of device layout. The off-state performance of the SJ LIGBT at different temperatures is assessed and a comparison to an equivalent LDMOSFET is given. © 2014 Elsevier Ltd. All rights reserved.