High mobility N-channel and P-channel nanocrystalline silicon thin-film transistors

We report high hole and electron mobilities in nanocrystalline silicon (nc-Si:H) top-gate staggered thin-film transistors (TFTs) fabricated by direct plasma-enhanced chemical vapor deposition (PECVD) at 260°C. The n-channel nc-Si:H TFT with n+ nc-Si:H ohmic contacts shows a field-effect electron mobility (μnFE) of 130 cm2/Vs, which increases to 150 cm2/Vs with Cr-silicide contacts, along with a field-effect hole mobility (μhFE) of 25 cm2/Vs. To the best of our knowledge, the hole and electron mobilities reported here are the highest achieved to date using direct PECVD. © 2005 IEEE.

Switching characteristics of diamond-based m-i-p+ diodes in power electronic applications

Modeling and numerical analysis of diamond m-i-p+ diode have been performed for static and transient analysis using TCAD Sentaurus platform. The simulation results are compared with experimental measurements. Prediction of transient turn-off characteristics of diamond m-i-p+ diode at high temperature is performed for the first time. It was found that unlike conventional Si diode, peak reverse current in diamond m-i-p+ diode reduces with increasing temperature while on-state voltage drop increases. © 2011 IEEE.

Low temperature (< 100 °c) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.

P-16: Light-bias induced instability and persistent photoconductivity in in-zn-o/ga-in-zn-o thin film transistors

Stress/recovery measurements demonstrate that even highperformance passivated In-Zn-O/ Ga-In-Zn-O thin film transistors with excellent in-dark stability suffer from light-bias induced threshold voltage shift (ΔV T) and defect density changes. Visible light stress leads to ionisation of oxygen vacancy sites, causing persistent photoconductivity. This makes the material act as though it was n-doped, always causing a negative threshold voltage shift under strong illumination, regardless of the magnitude and polarity of the gate bias. © 2011 SID.

Increasing the flexoelastic ratio of liquid crystals using highly fluorinated ester-linked bimesogens.

We present experimental results on the bulk flexoelectric coefficients e and effective elastic coefficients K of non-symmetric bimesogenic liquid crystals when the number of terminal and lateral fluoro substituents is increased. These coefficients are of importance because the flexoelastic ratio e/K governs the magnitude of flexoelectro-optic switching in chiral nematic liquid crystals. The study is carried out for two different types of linkage in the flexible spacer chain that connects the separate mesogenic units: these are either an ether or an ester unit. It is found that increasing the number of fluorine atoms on the mesogenic units typically leads to a small increase in e and a decrease in K, resulting in an enhancement of e/K. The most dramatic increase in e/K, however, is observed when the linking group is changed from ether to ester units, which can largely be attributed to an increase in e. Increasing the number of fluorine atoms does, however, increase the viscoelastic ratio and therefore leads to a concomitant increase in the response time. This is observed for both types of linkage, although the ester-linked compounds exhibit smaller viscoelastic ratios compared with their ether-linked counterparts. Highly fluorinated ester-linked compounds are also found to exhibit lower transition temperatures and dielectric anisotropies. As a result, these compounds are promising materials for use in electro-optic devices.

Evaluation of the p-y method in the design of monopiles for offshore wind turbines

Monopile foundations, currently designed using the p-y method, are technically viable in supporting larger offshore wind turbines in waters to a depth of 30 m. The p-y method was developed to better understand the behavior of laterally loaded long slender piles required for the offshore oil and gas installations. The lateral load-deformation behavior of two monopiles, 5 and 7.5 m dia, installed in soft clays of varying undrained shear strength and stiffness, was studied. A combination of axial and lateral loads expected at an offshore wind farm location with a water depth of 30 m was used in the analysis. It was established that the Matlock (1970) p-y curves are too soft and under-estimate the ultimate soil reaction at all depths except at the monopile tip. At the pile tip, the base shear was not accounted for in the p-y curves, hence resulting in the over-estimation of the soil reaction. Consequently, the Matlock (1970) p-y formulation significantly underestimates the monopile ultimate lateral capacity. The use of the Matlock (1970) p-y method would result in over-conservative designs of monopiles for offshore wind turbines. This is an abstract of a paper presented at the Offshore Technology Conference (Houston, TX 5/6-9/2013).