67 resultados para optoelectronics


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We experimentally demonstrate for the first time 1.55μm vertical-cavity surface-emitting laser (VCSEL) transmission over 6.5 km single mode fiber (SMF) at 20 Gb/s for optical access networks. Characterization of the device is also investigated. © 2009 IEEE.

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From the wide spectrum of potential applications of graphene, ranging from transistors and chemical sensors to nanoelectromechanical devices and composites, the field of photonics and optoelectronics is believed to be one of the most promising. Indeed, graphene's suitability for high-speed photodetection was demonstrated in an optical communication link operating at 10 Gbit s(-1). However, the low responsivity of graphene-based photodetectors compared with traditional III-V-based ones is a potential drawback. Here we show that, by combining graphene with plasmonic nanostructures, the efficiency of graphene-based photodetectors can be increased by up to 20 times, because of efficient field concentration in the area of a p-n junction. Additionally, wavelength and polarization selectivity can be achieved by employing nanostructures of different geometries.

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The first experimental demonstration of unique polarizatioon characteristics are reported. It is believed that the strong polarization effects reported result from the chirality imposed by the patterns of gammadions enhanced by plasmon effects due to the nanostructuring of the metal film in which they are cut. It is clear that such structures has the potential to yield many new and intriguing applications in optoelectronics and other areas.

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From the wide spectrum of potential applications of graphene, ranging from transistors and chemical sensors to nanoelectromechanical devices and composites, the field of photonics and optoelectronics is believed to be one of the most promising. Indeed, graphene's suitability for high-speed photodetection was demonstrated in an optical communication link operating at 10 Gbit s 1. However, the low responsivity of graphene-based photodetectors compared with traditional III-V-based ones is a potential drawback. Here we show that, by combining graphene with plasmonic nanostructures, the efficiency of graphene-based photodetectors can be increased by up to 20 times, because of efficient field concentration in the area of a p-n junction. Additionally, wavelength and polarization selectivity can be achieved by employing nanostructures of different geometries. © 2011 Macmillan Publishers Limited. All rights reserved.

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Board-level optical links are an attractive alternative to their electrical counterparts as they provide higher bandwidth and lower power consumption at high data rates. However, on-board optical technology has to be cost-effective to be commercially deployed. This study presents a chip-to-chip optical interconnect formed on an optoelectronic printed circuit board that uses a simple optical coupling scheme, cost-effective materials and is compatible with well-established manufacturing processes common to the electronics industry. Details of the link architecture, modelling studies of the link's frequency response, characterisation of optical coupling efficiencies and dynamic performance studies of this proof-of-concept chip-to-chip optical interconnect are reported. The fully assembled link exhibits a -3 dBe bandwidth of 9 GHz and -3 dBo tolerances to transverse component misalignments of ±25 and ±37 μm at the input and output waveguide interfaces, respectively. The link has a total insertion loss of 6 dBo and achieves error-free transmission at a 10 Gb/s data rate with a power margin of 11.6 dBo for a bit-error-rate of 10 -12. The proposed architecture demonstrates an integration approach for high-speed board-level chip-to-chip optical links that emphasises component simplicity and manufacturability crucial to the migration of such technology into real-world commercial systems. © 2012 The Institution of Engineering and Technology.

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Graphene has extraordinary electronic and optical properties and holds great promise for applications in photonics and optoelectronics. Demonstrations including high-speed photodetectors, optical modulators, plasmonic devices, and ultrafast lasers have now been reported. More advanced device concepts would involve photonic elements such as cavities to control light-matter interaction in graphene. Here we report the first monolithic integration of a graphene transistor and a planar, optical microcavity. We find that the microcavity-induced optical confinement controls the efficiency and spectral selection of photocurrent generation in the integrated graphene device. A twenty-fold enhancement of photocurrent is demonstrated. The optical cavity also determines the spectral properties of the electrically excited thermal radiation of graphene. Most interestingly, we find that the cavity confinement modifies the electrical transport characteristics of the integrated graphene transistor. Our experimental approach opens up a route towards cavity-quantum electrodynamics on the nanometre scale with graphene as a current-carrying intra-cavity medium of atomic thickness. © 2012 Macmillan Publishers Limited. All rights reserved.

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Direct formation of large-area carbon thin films on gallium nitride by chemical vapor deposition without metallic catalysts is demonstrated. A high flow of ammonia is used to stabilize the surface of the GaN (0001)/sapphire substrate during the deposition at 950°C. Various characterization methods verify that the synthesized thin films are largely sp 2 bonded, macroscopically uniform, and electrically conducting. The carbon thin films possess optical transparencies comparable to that of exfoliated graphene. This paper offers a viable route toward the use of carbon-based materials for future transparent electrodes in III-nitride optoelectronics, such as GaN-based light emitting diodes and laser diodes. © 1988-2012 IEEE.

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a-C:H films deposited from methane and helium mixture in a capacitively coupled rf plasma were found to show photoluminescence (PL) with peak intensities at energies far above the Taue gap of these films. Apart from the PL the films were investigated with respect to their IR and UV/VIS absorption properties as well as their Raman spectra were examined. The ultraviolet (UV) and blue luminescence from hard a-C:H thin films are explained by incorporation of polycyclic hydrocarbons from gas-phase reactions in the methane helium plasma into the film.

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A novel and simple non-return-to-zero differential phase shift keying (NRZ-DPSK) wavelength division multiplexing (WDM) system, which can simultaneously demultiplex and demodulate multiple wavelengths, is proposed and investigated in this paper. The phase-to-intensity demodulation principle is based on detuned filtering, which is achieved by using a single commercial array waveguide grating (AWG) in our scheme. By properly choosing appropriate AWG channels at the transmitter, the AWG at the receiver can act as both the demultiplexer and the demodulator of the DPSK signals. Simulations at 10, 20, and 40 Gbit/s show good flexibility and performance for the proposed system. © 2009 Higher Education Press and Springer-Verlag GmbH.