The geometry and the number of contacts of monodisperse sphere packs using X-ray tomography

The three-dimensional structure of very large samples of monodisperse bead packs is studied by means of X-Ray Computed Tomography. We retrieve the coordinatesofeach bead inthe pack and wecalculate the average coordination number by using the tomographic images to single out the neighbors in contact. The results are compared with the average coordination number obtained in Aste et al. (2005) by using a deconvolution technique. We show that the coordination number increases with the packing fraction, varying between 6.9 and 8.2 for packing fractions between 0.59 and 0.64. © 2005 Taylor & Francis Group.

A neuro-inspired method for data rate limited feedback control

The nervous system implements a networked control system in which the plants take the form of limbs, the controller is the brain, and neurons form the communication channels. Unlike standard networked control architectures, there is no periodic sampling, and the fundamental units of communication contain little numerical information. This paper describes a novel communication channel, modeled after spiking neurons, in which the transmitter integrates an input signal and sends out a spike when the integral reaches a threshold value. The reciever then filters the sequence of spikes to approximately reconstruct the input signal. It is shown that for appropriate choices of channel parameters, stable feedback control over these spiking channels is possible. Furthermore, good tracking performance can be achieved. The data rate of the channel increases linearly with the size of the inputs. Thus, when placed in a feedback loop, small loop gains imply a low data rate. ©2010 IEEE.

Stabilization of planar collective motion with limited communication

This paper proposes a design methodology to stabilize relative equilibria in a model of identical, steered particles moving in the plane at unit speed. Relative equilibria either correspond to parallel motion of all particles with fixed relative spacing or to circular motion of all particles around the same circle. Particles exchange relative information according to a communication graph that can be undirected or directed and time-invariant or time-varying. The emphasis of this paper is to show how previous results assuming all-to-all communication can be extended to a general communication framework. © 2008 IEEE.

Cryogenic on-chip multiplexer for the study of quantum transport in 256 split-gate devices

We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plateaux at intervals of 2e^2/h. A fabrication-limited yield of 94% is achieved for the array, and a "quantum yield" is also defined, to account for disorder affecting the quantum behaviour of the devices. The quantum yield rose from 55% to 86% after illuminating the sample, explained by the corresponding increase in carrier density and mobility of the two-dimensional electron gas. The multiplexer is a scalable architecture, and can be extended to other forms of mesoscopic devices. It overcomes previous limits on the number of devices that can be fabricated on a single chip due to the number of electrical contacts available, without the need to alter existing experimental set ups.

Finite horizon LQR control with limited controller-system communication

We consider finite-horizon LQR control with limited controller-system communication. Within a time-horizon T , the controller can only communicate with the system d

Generation of bandwidth-limited 2 ps pulses with 100 GHz repetition rate from multisegmented injection laser

A new dynamic regime in a multisegmented AlGaAs/GaAs DH injection laser has been realised. Generation of bandwidth-limited 100 GHz repetition rate pulses has been demonstrated. This value is claimed to be the largest ever reported for an ultrashort pulse repetition frequency obtained directly from a laser.

Modeling current-voltage behaviour in oxide TFTs combining trap-limited conduction with percolation

Current-voltage behaviour of oxide TFTs is modeled based on trap-limited conduction and percolation theories. The mobility has a power-law dependence, in which percolation controls the exponent while trap states determine constant term in the power law. The proposed model, which is fully physically-based, provides a good agreement with measured transistor characteristics as well as transient operations of fabricated pixel test circuits for oxide-based OLED displays. © 2013 Society for Information Display.

Ni(Pt)-silicide contacts on CMOS devices: Impact of substrate nature and Pt concentration on the phase formation

Ni silicides used as contacts in source/drain and gate of advanced CMOS devices were analyzed by atom probe tomography (APT) at atomic scale. These measurements were performed on 45 nm nMOS after standard self-aligned silicide (salicide) process using Ni(5 at.% Pt) alloy. After the first annealing (RTA1), δ-Ni2Si was the only phase formed on gate and source/drain while, after the second annealing (RTA2), two different Ni silicides have been formed: NiSi on the gate and δ-Ni2Si on the source and drain. This difference between source/drain and gate regions in nMOS devices has been related to the Si substrate nature (poly or mono-crystalline) and to the size of the contact. In fact, NiSi seems to have difficulties to nucleate in the narrow source/drain contact on mono-crystalline Si. The results have been compared to analysis performed on 28 nm nMOS where the Pt concentration is higher (10 at.% Pt). In this case, θ-Ni2Si is the first phase to form after RTA1 and NiSi is then formed at the same time on source (or drain) and gate after RTA2. The absence of the formation of NiSi from δ-Ni 2Si/Si(1 0 0) interface compared to θ-Ni2Si/Si(1 0 0) interface could be related to the difference of the interface energies. The redistributions of As and Pt in different silicides and interfaces were measured and discussed. In particular, it has been evidenced that Pt redistributions obtained on both 45 and 28 nm MOS transistors correspond to respective Pt distributions measured on blanket wafers. © 2013 Elsevier B.V. All rights reserved.