Time-resolved particle image velocimetry within the nozzle of a drop-on-demand printhead

Time-resolved particle image velocimetry (PIV) has been performed inside the nozzle of a commercially available inkjet print-head to obtain the time-dependent velocity waveform. A printhead with a single transparent nozzle 80 μm in orifice diameter was used to eject single droplets at a speed of 5 m/s. An optical microscope was used with an ultra-high-speed camera to capture the motion of particles suspended in a transparent liquid at the center of the nozzle and above the fluid meniscus at a rate of half a million frames per second. Time-resolved velocity fields were obtained from a fluid layer approximately 200 μm thick within the nozzle for a complete jetting cycle. A Lagrangian finite-element numerical model with experimental measurements as inputs was used to predict the meniscus movement. The model predictions showed good agreement with the experimental results. This work provides the first experimental verification of physical models and numerical simulations of flows within a drop-on-demand nozzle. © 2012 Society for Imaging Science and Technology.

Drop speeds from drop-on-demand ink-jet print heads

Measured drop speeds from a range of industrial drop-on-demand (DoD) ink-jet print head designs scale with the predictions of very simple physical models and results of numerical simulations. The main drop/jet speeds at a specified stand-off depend on fluid properties, nozzle exit diameter, and print head drive amplitude for fixed waveform timescales. Drop speeds from the Xaar, Spectra Dimatix, and MicroFab DoD print heads tested with (i) Newtonian, (ii) weakly elastic, and (iii) highly shear-thinning fluids all show a characteristic linear rise with drive voltage (setting) above an apparent threshold drive voltage. Jetting, simple modeling approaches, and numerical simulations of Newtonian fluids over the typical DoD printing range of surface tensions and viscosities were studied to determine how this threshold drive value and the slope of the characteristic linear rise depend on these fluid properties and nozzle exit area. The final speed is inversely proportional to the nozzle exit area, as expected from volume conservation. These results should assist specialist users in the development and optimization of DoD applications and print head design. For a given density, the drive threshold is determined primarily by viscosity, and the constant of proportionality k linking speed with drive above a drive threshold becomes independent of viscosity and surface tension for more viscous DoD fluid jetting. © 2013 Society for Imaging Science and Technology.

The plastic collapse and energy absorption capacity of egg-box panels

The plastic collapse response of aluminium egg-box panels subjected to out-of-plane compression has been measured and modelled. It is observed that the collapse strength and energy absorption are sensitive to the level of in-plane constraint, with collapse dictated either by plastic buckling or by a travelling plastic knuckle mechanism. Drop weight tests have been performed at speeds of up to 6 m s-1, and an elevation in strength with impact velocity is noted. A 3D finite element shell model is needed in order to reproduce the observed behaviours. Additional calculations using an axisymmetric finite element model give the correct collapse modes but are less accurate than the more sophisticated 3D model. The finite element simulations suggest that the observed velocity dependence of strength is primarily due to strain-rate sensitivity of the aluminium sheet, with material inertia playing a negligible role. Finally, it is shown that the energy absorption capacity of the egg-box material is comparable to that of metallic foams. © 2003 Elsevier Ltd. All rights reserved.

Partial soi power LDMOS with a variable low-kappa; Dielectric buried layer and a buried P layer

A power LDMOS on partial silicon on insulator (PSOI) with a variable low-κ dielectric (VLKD) buried layer and a buried p (BP) layer is proposed (VLKD BPSOI). At a low κ value, the electric field strength in the buried dielectric (EI) is enhanced, and a Si window makes the substrate share the vertical voltage drop, leading to a high vertical breakdown voltage (BV). Moreover, three interface field peaks are introduced by the BP, the Si window, and the VLKD, which modulate the fields in the SOI layer, the VLKD layer, and the substrate; consequently, a high BV is obtained. Furthermore, the BP reduces the specific on-resistance (Ron), and the Si window alleviates the self-heating effect (SHE). The BV for VLKD BPSOI is enhanced by 34.5%, and Ron is decreased by 26.6%, compared with those for the conventional PSOI, and VLKD BPSOI also maintains a low SHE. © 2006 IEEE.

Thermal transport in high porosity cellular metal foams

The heat dissipation capability of highly porous cellular metal foams with open cells subject to forced air convection is studied using a combined experimental and analytical approach. The cellular morphologies of six FeCrAlY (an iron-based alloy) foams and six copper alloy foams with a range of pore sizes and porosities are quantified with the scanning electronic microscope and image analysis. Experimental measurements on pressure drop and heat transfer for copper foams are carried out. A numerical model for forced convection across open-celled metal foams is subsequently developed, and the predictions are compared with those measured. Reasonably good agreement with test data is obtained, given the complexity of the cellular foam morphology and the associated momentum/energy transport. The results show that cell size has a more significant effect on the overall heat transfer than porosity. An optimal porosity is obtained based on the balance between pressure drop and overall heat transfer, which decreases as the Reynolds number is increased.

Convective heat dissipation with lattice-frame materials

This paper presents experimental results on heat transfer and pressure drop for a compact heat sink made of fully triangulated, lightweight (porosity∼0.938), aluminum lattice-frame materials (LFMs). Due to the inherent structural anisotropy of the LFMs, two mutually perpendicular orientations were selected for the measurements. Constant heat flux was applied to the heat sink under steady state conditions, and dissipated by forced air convection. The experimental data were compared with those predicted from an analytical model based on fin analogy. The experimental results revealed that pressure drop is strongly dependent upon the orientation of the structure, due mainly to the flow blockage effect. For heat transfer measurements, typical local temperature distributions on the substrate under constant heat flux conditions were captured with infrared camera. The thermal behavior of LFMs was found to follow closely that of cylinder banks, with early transition Reynolds number (based on strut diameter) equal to about 300. The Nusselt number prediction from the fin-analogy correlates well with experimental measurements, except at low Reynolds numbers where a slightly underestimation is observed. Comparisons with empty channels and commonly used heat exchanger media show that the present LFM heat sink can remove heat approximately seven times more efficient than an empty channel and as efficient as a bank of cylinders at the same porosity level. The aluminum LFMs are extremely stiff and strong, making them ideal candidates for multifunctional structures requiring both heat dissipation and mechanical load carrying capabilities. © 2003 Elsevier Ltd. All rights reserved.

Chemical sputtering of ta-C: Implications for the deposition of carbon nitride

The majority of attempts to synthesize the theoretically predicted superhard phase β-C3N4 have been driven towards the use of techniques which maximize both the carbon sp3 levels and the amount of nitrogen incorporated within the film. However, as yet no attempt has been made to understand the mechanism behind the resultant chemical sputter process and its obvious effect upon film growth. In this work, however, the chemical sputtering process has been investigated through the use of an as-deposited tetrahedrally bonded amorphous carbon film with a high density nitrogen plasma produced using an rf-based electron cyclotron wave resonance source. The results obtained suggested the presence of two distinct ion energy dependent regimes. The first, below 100 eV, involves the chemical sputtering of carbon from the surface, whereas the second at ion energies in excess of 100 eV exhibits a drop in sputter rate associated with the subplantation of nitrogen within the carbon matrix. Furthermore, as the sample temperature is increased there is a concomitant decrease in sputter rate suggesting that the rate is controlled by the adsorption and desorption of additional precursor species rather than the thermal desorption of CN. A simple empirical model has been developed in order to elucidate some of the primary reactions involved in the sputter process. Through the incorporation of various previously determined experimental parameters including electron temperature, ion current density, and nitrogen partial pressure the results indicated that molecular nitrogen physisorbed at the ta-C surface was the dominant precursor involved in the chemical sputter process. However, as the physisorption enthalpy of molecular nitrogen is low this suggests that activation of this molecular species takes place only through ion impact at the surface. The obtained results therefore provide important information for the modeling and growth of high density carbon nitride. © 2001 American Institute of Physics.

ZnO film based surface acoustic wave micro-pump

In this study, a micro-pump unit based on surface acoustic wave (SAW) on piezoelectric ZnO film is designed and fabricated as a micro-fluidic device. It employs a mechanical wave, which is generated electrically using an aluminum interdigital transducer (IDT), and propagates on the surface of the ZnO film. The ZnO film was used in this study because it has a high electromechanical coefficient and an excellent bonding with various substrate materials, in particular silicon. The sputtering parameters for ZnO film deposition have been optimized, and the ZnO films with different thickness from 1 micron to 5.5 microns were prepared. The film properties have been characterized using different methods, such as scanning electron microscopy, X-ray diffraction and atomic force microscopy. Aluminum IDT with a finger width and spacing of 8 microns was patterned on the ZnO film using a lift-off process. The frequency generated was measured using a network analyzer, and it varies from 130 MHz to 180 MHz as a function of film thickness. A signal generator was used to generate the frequency with a power amplifier to amplify the signal, which was then applied to aluminum IDT to generate the surface acoustic wave. If a liquid droplet exists on the surface carrying the acoustic wave, the energy and the momentum of the SAW will be coupled into the fluid, causing the liquid to vibrate and move on film surface. The strength of this movement is determined by the applied voltage and frequency. The volume of the liquid drop loaded on the SAW device in this study is of several hundreds of nanoliters. The movement of the liquid inside the droplet and also on the ZnO film surface can be demonstrated. The performance of ZnO SAW device was characterized as a function of film thickness. © 2007 IOP Publishing Ltd.

1.4 kV, 25 A, PT and NPT Trench IGBTs with optimum forward characteristics

In this paper we report the development of 1.4 kV 25 A PT and NPT Trench IGBTs with ultra-low on-resistance, latch-up free operation and highly superior overall performance when compared to previously reported DMOS IGBTs in the same class. We have fabricated both PT and transparent anode NPT devices to cover a wide range of applications which require very low on-state losses or very fast time with ultra-low switching losses. The minimum forward voltage drop at the standard current density of 100A/cm2 was 1.1 V for PT non-irradiated devices and 2.1 V for 16 MRad PT irradiated devices. The non-irradiated transparent emitter NPT structure has a typical forward voltage drop of 2.2 V, a turn-off time below 100 ns and turn-off energy losses of 11.2 mW/cm2 at 125 C. The maximum controllable current density was in excess of 1000A/cm2.

A comparison of different failure assessment methodologies applied to the NESC-1 test

Predictions for a 75x205mm surface semi-elliptic defect in the NESC-1 spinning cylinder test have been made using BS PD 6493:1991, the R6 procedure, non-linear cracked body finite element analysis techniques and the local approach to fracture. All the techniques agree in predicting ductile tearing near the inner surface of the cylinder followed by cleavage initiation. However they differ in the amount of ductile tearing, and the exact location and time of any cleavage event. The amount of ductile tearing decreases with increasing sophistication in the analysis, due to the drop in peak crack driving force and more explicit consideration of constraint effects. The local approach predicts a high probability of cleavage in both HAZ and base material after 190s, while the other predictions suggest that cleavage is unlikely in the HAZ due to constraint loss, but likely in the underlying base material. The timing of this event varies from ∼150s for R6 predictions to ∼250-300s using non-linear cracked body analysis.

MOS and bipolar gated thyristor: A thyristor with IGBT switching characteristics

The IGBT has become the device of choice in many high-voltage-power electronic applications, by virtue of combining the ease of MOS gate control with an acceptable forward voltage drop. However, designers have retained an interest in MOS gated thyristor structures which have a turn-off capability. These offer low on-state losses as a result of their latching behaviour. Recently, there have been various proposals for dual-gate devices that have a thyristor on-state with IGBT-like switching. Many of these dual gated structures rely on advanced MOS technology, with inherent manufacturing difficulties. The MOS and bipolar gated thyristor offers all the advantages of dual gated performance, while employing standard IGBT processing techniques. The paper describes the MBGT in detail, and presents experimental and simulation results for devices based on realistic commercial processes. It is shown that the MBGT represents a viable power semiconductor device technology, suitable for a diverse range of applications. © IEE, 1998.

Axial compressor response to inlet flow distortions by a CFD analysis

The usual approach to compressor design considers uniform inlet flow characteristics. Especially in aircraft applications, the inlet flow is quite often non uniform, and this can result in severe performance degradation. The magnitude of this phenomenon is amplified in military engines due to the complexity of inlet duct configurations and the extreme flight conditions. CFD simulation is an innovative and powerful tool for studying inlet distortions and can bring this inside the very early phases of the design process. This project attempts to study the effects of inlet flow distortions in an axial flow compressor trying to minimize the use computer resources and computational time. The first stage of a low bypass ratio compressor has been analyzed and its clean and distorted performance compared outlining the principal changes due to uneven flow distribution: drop in mass flow, increase in pressure and temperature ratios, decrease in surge margin. Three different studies have then been conducted to better understand the effects of the level, the type and the frequency of the distortion.