Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy.

We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core-shell encapsulation techniques on the electronic properties of GaAs nanowires. We demonstrate that two-temperature growth of the GaAs core leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime. In addition, overcoating the GaAs core with a larger-bandgap material is shown to reduce the density of surface traps by 82%, thereby enhancing the charge conductivity.

Defect-free GaAs/AlGaAs Core-shell nanowires on Si substrates

We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by metal-organic chemical vapor deposition. By deposition of thin GaAs buffer layers on Si substrates, these nanowires could be grown on the buffer layers with much less stringent conditions as otherwise imposed by epitaxy of III-V compounds on Si. Also, crystal-defect-free GaAs nanowires were grown by using either a two-temperature growth mode consisting of a short initial nucleation step under higher temperature followed by subsequent growth under lower temperature or a rapid growth rate mode with high source flow rate. These two growth modes not only eliminated planar crystallographic defects but also significantly reduced tapering. Core-shell GaAs-AlGaAs nanowires grown by the two-temperature growth mode showed improved optical properties with strong photoluminescence and long carrier life times. © 2011 American Chemical Society.

Defect-assisted sub-bandgap avalanche photodetection in interleaved carrier-depletion silicon waveguide for telecom band

This paper demonstrates on chip sub bandgap detection of light at 1550 nm wavelength using the configuration of interleaved PN junctions along a silicon waveguide. The device operates under reverse bias in a nearly fully depleted mode, thus minimizing the free carrier plasma losses and significantly increases the detection volume at the same time. Furthermore, substantial enhancement in responsivity is observed by the transition from reverse bias to avalanche breakdown regime. The observed high responsivity of up to 7.2 mA/W at 3 V is attributed to defect assisted photogeneration, where the defects are related to the surface and the bulk of the waveguide. © 2014 AIP Publishing LLC.

Effect of imperfections on the yielding of two-dimensional foams

The influence of each of the six different types of morphological imperfection - waviness, non-uniform cell wall thickness, cell-size variations, fractured cell walls, cell-wall misalignments, and missing cells - on the yielding of 2D cellular solids has been studied systematically for biaxial loading. Emphasis is placed on quantifying the knock-down effect of these defects on the hydrostatic yield strength and upon understanding the associated deformation mechanisms. The simulations in the present study indicate that the high hydrostatic strength, characteristic of ideal honeycombs, is reduced to a level comparable with the deviatoric strength by several types of defect. The common source of this large knock-down is a switch in deformation mode from cell wall stretching to cell wall bending under hydrostatic loading. Fractured cell edges produce the largest knock-down effect on the yield strength of 2D foams, followed in order by missing cells, wavy cell edges, cell edge misalignments, Γ Voronoi cells, δ Voronoi cells, and non-uniform wall thickness. A simple elliptical yield function with two adjustable material parameters successfully fits the numerically predicted yield surfaces for the imperfect 2D foams, and shows potential as a phenomenological constitutive law to guide the design of structural components made from metallic foams.

Local hydrogen reactions of H*2 in a-Si:H

Hydrogen rearrangements at the H*2 complex are used as a model of low energy, local transitions in the two-hydrogen density of states of hydrogenated amorphous silicon (a-Si:H). These are used to account for the low activation energy motion of H observed by nuclear magnetic resonance, the low energy defect annealing of defects formed by bias stress in thin film transistors, and the elimination of hydrogen from the growth zone during the low temperature plasma deposition of a-Si:H. © 1998 Elsevier Science B.V. All rights reserved.

Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (Δ VT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths. © 2010 American Institute of Physics.

Elastodynamic erosion of thermal barrier coatings

The finite element method is used to analyze the elastodynamic response of a columnar thermal barrier coating due to normal impact and oblique impact by an erosive particle. An assessment is made of the erosion by crack growth from preexisting flaws at the edge of each column: it is demonstrated that particle impacts can be sufficiently severe to give rise to columnar cracking. First, the transient stress state induced by the normal impact of a circular cylinder or a sphere is calculated in order to assess whether a 2D calculation adequately captures the more realistic 3D behavior. It is found that the transient stress states for the plane strain and axisymmetric models are similar. The sensitivity of response to particle diameter and to impact velocity is determined for both the cylinder and the sphere. Second, the transient stress state is explored for 2D oblique impact by a circular cylindrical particle and by an angular cylindrical particle. The sensitivity of transient tensile stress within the columns to particle shape (circular and angular), impact angle, impact location, orientation of the angular particle, and to the level of friction is explored in turn. The paper concludes with an evaluation of the effect of inclining the thermal barrier coating columns upon their erosion resistance. © 2011 The American Ceramic Society.

A study of the configurations of boron in silicon using an empirical approach

The configuration space of boron in silicon has been investigated using an empirical potential approach. This study indicates that energetically favourable configurations consist of a number of three-fold coordinated split interstitials. A configuration consisting of a four-fold boron-interstitial in combination with a two-fold silicon is found to be perfectly aligned in the <111> direction. This configuration in the positive charge state is a possibility for the boron interstitial related defect found via EPR and DLTS. © 1994.