Fabrication of diamond based schottky barrier diodes with oxide ramp termination

The paper's goal is the first demonstration of the fabrication of high power Schottky diodes on synthetic diamond using oxide ramp termination. In order to allow full activated impurities at room temperature and a high hole mobility a low boron doping of the drift layer is employed. Several aspects of the manufacturing technology are presented. A termination with a small ramp angle can be obtained using only RIE technique due to diamond wafer nonuniformity (roughness). Experimental forward and reverse characteristics measured on diamond diodes are also included. © 2007 IEEE.

Synapses with short-term plasticity are optimal estimators of presynaptic membrane potentials.

The trajectory of the somatic membrane potential of a cortical neuron exactly reflects the computations performed on its afferent inputs. However, the spikes of such a neuron are a very low-dimensional and discrete projection of this continually evolving signal. We explored the possibility that the neuron's efferent synapses perform the critical computational step of estimating the membrane potential trajectory from the spikes. We found that short-term changes in synaptic efficacy can be interpreted as implementing an optimal estimator of this trajectory. Short-term depression arose when presynaptic spiking was sufficiently intense as to reduce the uncertainty associated with the estimate; short-term facilitation reflected structural features of the statistics of the presynaptic neuron such as up and down states. Our analysis provides a unifying account of a powerful, but puzzling, form of plasticity.