A field effect transistor using highly nitrogen-doped CVD diamond for power device applications

A new idea of power device, which contains highly nitrogen-doped CVD diamond and Schottky contact, is proposed to actualise a power device with diamond. Two-dimensional simulation is conducted using ISE TCAD device simulator. While comparably high current is obtained in a transient simulation as expected, this current does not contribute to the drain-source current because of the symmetry of the device. Using an asymmetric structure or bias conditions, the device has high potential as an electric device for extremely high power, high frequency and high temperature. © 2003 Elsevier Science B.V. All rights reserved.

The viability of subcarrier modulation for enhancing the performance of installed-base MMF links

The technique of Subcarrier Modulation is assessed by statistical analysis as a viable solution to broadband data transmission over dispersion limited multimode fibre. It is shown that a suitable passband region for transmission of 2.5 Gb/s channels exists at 5 GHz in greater than 80% of worst-case fibres under standard SMF/MMF launch conditions. ©2002 Optical Society of America.