Tuning of the electronic characteristics of ZnO nanowire field effect transistors by proton irradiation.

We demonstrated a controllable tuning of the electronic characteristics of ZnO nanowire field effect transistors (FETs) using a high-energy proton beam. After a short proton irradiation time, the threshold voltage shifted to the negative gate bias direction with an increase in the electrical conductance, whereas the threshold voltage shifted to the positive gate bias direction with a decrease in the electrical conductance after a long proton irradiation time. The electrical characteristics of two different types of ZnO nanowires FET device structures in which the ZnO nanowires are placed on the substrate or suspended above the substrate and photoluminescence (PL) studies of the ZnO nanowires provide substantial evidence that the experimental observations result from the irradiation-induced charges in the bulk SiO(2) and at the SiO(2)/ZnO nanowire interface, which can be explained by a surface-band-bending model in terms of gate electric field modulation. Our study on the proton-irradiation-mediated functionalization can be potentially interesting not only for understanding the proton irradiation effects on nanoscale devices, but also for creating the property-tailored nanoscale devices.

Long-range interactions in turbulence and the energy decay problem.

We discuss the long-range interactions that arise in homogeneous turbulence as a consequence of the Biot-Savart law. We note that, somewhat surprisingly, these long-range correlations are very weak in decaying, isotropic turbulence, and we argue that this should also be true for magnetohydrodynamic, rotating and stratified turbulence. If this is indeed the case, it is possible to make explicit predictions for the rate of decay of energy in these anisotropic systems, and it turns out that these predictions are consistent with the available numerical and experimental evidence.

Potential tuning of porous silicon luminescence

Electrochemical investigations were conducted of the effect of potential on the luminescence of porous silico (PS). The use of liquid contacts allows the potential to be controlled during studies of the photoluminescence (PL) and electroluminescence (EI). The PL and EL of PS samples prepared from n-type substrates is considered. To obtain luminescence from such PS it is necessary to generate holes in the valence band. This is achieved by either photoexcitation or an electrochemical process involving the reduction of persulfate. This paper describes the investigations of the effect of potential on the PL and EL of PS. A mechanism of 'potential tuning' based on electron occupancy and Auger quenching is then proposed.

Advanced thermal processing of semiconductor materials in the msec-range

This paper reviews the advances that flash lamp annealing brings to the processing of the most frequently used semiconductor materials, namely silicon and silicon carbide, thus enabling the fabrication of novel microelectronic structures and materials. The paper describes how such developments can translate into important practical applications leading to a wide range of technological benefits. Opportunities in ultra-shallow junction formation, heteroepitaxial growth of thin films of cubic silicon carbide on silicon, and crystallization of amorphous silicon films, along with the technical reasons for using flash lamp annealing are discussed in the context of state-of-the-art materials processing. © 2005 IEEE.

The oxidation of CH2O in the intermediate temperature range (943-995 K)

New atmospheric pressure flow reactor data on the oxidation of formaldehyde in the temperature range 943-995 K and over equivalence ratios from 0.013 to 36.7 are reported and discussed. A detailed mechanism assembled from previously published results produced acceptable agreement with the experimental data for the fuel-lean conditions, but failed to predict results for oxidative pyrolysis. Analysis or the very fuel-lean conditions, but failed to modelling results are principally sensitive to CH2O+HO2→HCO+H2O2 (6) and H2O2 +M→OH+OH+M (33). Whereas the specific rate of each reaction cannot be independently determined, it is found that the product k33.k6 is a well defined function of temperature: (3.4±3.0).1028 exp(-(26,800±400)/T). Inadequacies in the mechanism which may be responsible for the disagreement under fuel-rich conditions are discussed. © 1991 Combustion Institute.

Fabrication and testing of a high resolution extensometer based on resonant MEMS strain sensors

A novel type of linear extensometer with exceptionally high resolution of 4 nm based on MEMS resonant strain sensors bonded on steel and operating in a vacuum package is presented. The tool is implemented by means of a steel thin bar that can be pre-stressed in tension within two fixing anchors. The extension of the bar is detected by using two vacuum-packaged resonant MEMS double- ended tuning fork (DETF) sensors bonded on the bar with epoxy glue, one of which is utilized for temperature compensation. Both sensors are driven by a closed loop self-oscillating transresistance amplifier feedback scheme implemented on a PCB (Printed Circuit Board). On the same board, a microcontroller-based frequency measurement circuit is also implemented, which is able to count the square wave fronts of the MEMS oscillator output with a resolution of 20 nsec. The system provides a frequency noise of 0.2 Hz corresponding to an extension resolution of 4 nm for the extensometer. Nearly perfect temperature compensation of the frequency output is achieved in the temperature range 20-35 C using the reference sensor. © 2011 IEEE.