INFLUENCE OF ATMOSPHERIC HUMIDITY ON THE ABRASIVE WEAR OF METALS.

A pin-on-disc apparatus has been used to obtain continuous simultaneous measurements of the wear and friction (sliding force) behaviour of metals on bonded silicon carbide abrasive paper under conditions of controlled humidity. Iron, mild steel, and copper exhibit qualitatively similar wear behaviour; the wear rate decreases progressively with the number of passes over the same track. In contrast, the wear rate of titanium remains constant. Variation in atmospheric humidity has little effect on the wear rates of copper or titanium, although a slight effect was found in mild steel and iron. Refs.

INFLUENCE OF ATMOSPHERIC COMPOSITION ON THE ABRASIVE WEAR OF TITANIUM AND Ti-6Al-4V.

A pin-on-disc apparatus has been used to investigate the wear and friction (sliding force) behavior of metals on bonded silicon carbide and alumina papers under conditions of controlled atmospheric composition. The wear rates of both commercial purity titanium and the alloy Ti-6%Al-4%V tested in air were found to remain constant with time, in contrast with the behavior of other metals tested under similar conditions, which exhibited a progressive decrease in wear rate with increasing number of passes along the same track. It is proposed that the concentration of interstitial nitrogen and oxygen in the worn metal surface, which largely determines its mechanical properties, strongly influences both the ductility of the abraded material and the force of adhesion between the metal and the abrasive particles. Parallels are drawn between abrasive wear and machining to illustrate the importance of oxygen at the interface between workpiece and tool surfaces.

MECHANISMS OF ABRASIVE WEAR IN A BORONIZED ALLOY STEEL.

This paper describes the effects of abrasive hardness and size on the 2-body abrasive wear mechanisms of a boronized low alloy steel. It is found that the wear resistance of the boronized steel is much greater against alumina abrasive than against silicon carbide. This difference in wear resistance is much enhanced when the particle size or the applied load is increased. Scanning electron microscopy of the worn specimens and of the used abrasive papers revealed that the enhanced difference in wear resistance between coarse alumina and silicon carbide papers is due to a change in the wear mechanism produced by silicon carbide papers with increasing abrasive particle size.

Solid particle erosion of boronized steels

Boronizing is a thermochemical diffusion-based process for producing iron boride layers in the surface of steel components. The boride layer is wear resistant and is very hard. Large residual stresses are found to exist in the surface layers, which are a function of substrate steel composition and heat treatment. By slow cooling from the boronizing temperature (900°C), a large compressive stress is developed in the boride layer. Hardening the steel by rapid cooling, either directly from the boronizing treatment or after subsequent austenitizing, develops tension in the coating which causes it to fracture. Tempering of the martensite produces compression in the coating, closing but not welding the cracks. The results of solid particle erosion experiments using silicon carbide, quartz, and glass bead erodents on boronized steels are presented.

Wear of hardfacing white cast irons by solid particle erosion

The response of three commercial weld-hardfacing alloys to erosive wear has been studied. These were high chromium white cast irons, deposited by an open-arc welding process, widely used in the mineral processing and steelmaking industries for wear protection. Erosion tests were carried out with quartz sand, silicon carbide grit and blast furnace sinter of two different sizes, at a velocity of 40 m s-1 and at impact angles in the range 20° to 90°. A monolithic white cast iron and mild steel were also tested for comparison. Little differences were found in the wear rates when silica sand or silicon carbide grit was used as the erodent. Significant differences were found, however, in the rankings of the materials. Susceptibility to fracture of the carbide particles in the white cast irons played an important role in the behaviour of the white cast irons. Sinter particles were unable to cause gross fracture of the carbides and so those materials with a high volume fraction of carbides showed the greatest resistance to erosive wear. Silica and silicon carbide were capable of causing fracture of the primary carbides. Concentration of plastic strain in the matrix then led to a high wear rate for the matrix. At normal impact with silica or silicon carbide erodents mild steel showed a greater resistance to erosive wear than these alloys. © 1995.

Microwave power effects on the properties of phosphorus-doped SiC:H films prepared using ECR-CVD

There has been a growing interest in hydrogenated silicon carbide films (SiC:H) prepared using the electron cyclotron resonance-chemical vapour deposition (ECR-CVD) technique. Using the ECR-CVD technique, SiC:H films have been prepared from a mixture of methane, silane and hydrogen, with phosphine as the doping gas. The effects of changes in the microwave power (from 150 to 900 W) on the film properties were investigated in a series of phosphorus-doped SiC:H films. In particular, the changes in the deposition rate, optical bandgap, activation energy and conductivity were investigated in conjunction with results from Raman scattering and Fourier transform infra-red (FTIR) analysis. It was found that increase in the microwave power has the effect of enhancing the formation of the silicon microcrystalline phase in the amorphous matrix of the SiC:H films. This occurs in correspondence to a rapid increase in the conductivity and a reduction in the activation energy, both of which exhibit small variations in samples deposited at microwave powers exceeding 500 W. Analysis of IR absorption results suggests that hydrogen is bonded to silicon in the Si-H stretching mode and to carbon in the sp3 CHn rocking/wagging and bending mode in films deposited at higher microwave powers.

Advanced thermal processing of semiconductor materials in the msec-range

This paper reviews the advances that flash lamp annealing brings to the processing of the most frequently used semiconductor materials, namely silicon and silicon carbide, thus enabling the fabrication of novel microelectronic structures and materials. The paper describes how such developments can translate into important practical applications leading to a wide range of technological benefits. Opportunities in ultra-shallow junction formation, heteroepitaxial growth of thin films of cubic silicon carbide on silicon, and crystallization of amorphous silicon films, along with the technical reasons for using flash lamp annealing are discussed in the context of state-of-the-art materials processing. © 2005 IEEE.

Physical modelling of large area 4H-SiC PiN diodes

The recent developments in SiC PiN diode research mean that physics-based models that allow accurate, rapid prediction of switching and conduction performance and resulting converter losses will soon be required. This is especially the case given the potential for very high voltage converters to be used for enabling distributed and renewable power generation. In this work an electro-thermal compact model of a 4.5 kV silicon carbide PiN diode has been developed for converter loss modelling in Simulink. Good matching of reverse recovery has been achieved between 25 and 200 °C. The I-V characteristics of the P+ anode contact have been shown to be significant in obtaining good matching for the forward characteristics of the diode, requiring further modelling work in this area. © 2009 IEEE.

Highly efficient spin transport in epitaxial graphene on SiC

Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide. Taking advantage of high-impedance injecting/detecting tunnel junctions, we show spin transport efficiencies up to 75%, spin signals in the mega-ohm range and spin diffusion lengths exceeding 100μm. This enables spintronics in complex structures: devices and network architectures relying on spin information processing, well beyond present spintronics applications, can now be foreseen. © 2012 Macmillan Publishers Limited. All rights reserved.

Half-bridge SIC inverter for hybrid electric vehicles: Design, development and testing at higher operating temperature

In recent years, Silicon Carbide (SiC) semiconductor devices have shown promise for high density power electronic applications, due to their electrical and thermal properties. In this paper, the performance of SiC JFETs for hybrid electric vehicle (HEV) applications is investigated at heatsink temperatures of 100 °C. The thermal runaway characteristics, maximum current density and packaging temperature limitations of the devices are considered and the efficiency implications discussed. To quantify the power density capabilities of power transistors, a novel 'expression of rating' (EoR) is proposed. A prototype single phase, half-bridge voltage source inverter using SiC JFETs is also tested and its performance at 25 °C and 100 °C investigated.