Modeling of MOS-side carrier injection in trench-gate IGBTs

A compact trench-gate IGBT model that captures MOS-side carrier injection is developed. The model retains the simplicity of a one-dimensional solution to the ambipolar diffusion equation, but at the same time captures MOS-side carrier injection and its effects on steady-state carrier distribution in the drift region and on switching waveforms. © 2007 IEEE.

Efficient registration of nonrigid 3-D bodies

We present a novel method to perform an accurate registration of 3-D nonrigid bodies by using phase-shift properties of the dual-tree complex wavelet transform (DT-CWT). Since the phases of DT-\BBCWT coefficients change approximately linearly with the amount of feature displacement in the spatial domain, motion can be estimated using the phase information from these coefficients. The motion estimation is performed iteratively: first by using coarser level complex coefficients to determine large motion components and then by employing finer level coefficients to refine the motion field. We use a parametric affine model to describe the motion, where the affine parameters are found locally by substituting into an optical flow model and by solving the resulting overdetermined set of equations. From the estimated affine parameters, the motion field between the sensed and the reference data sets can be generated, and the sensed data set then can be shifted and interpolated spatially to align with the reference data set. © 2011 IEEE.