Effect of surface roughness on rarefied-gas heat transfer in microbearings

In this Letter, the rarefaction and roughness effects on the heat transfer process in gas microbearings are investigated. A heat transfer model is developed by introducing two-variable Weierstrass-Mandelbrot (W-M) function with fractal geometry. The heat transfer problem in the multiscale self-affine rough microbearings at slip flow regime is analyzed and discussed. The results show that rarefaction has more significant effect on heat transfer in rough microbearings with lower fractal dimension. The negative influence of roughness on heat transfer found to be the Nusselt number reduction. The heat transfer performance can be optimized with increasing fractal dimension of the rough surface. © 2012 Elsevier B.V. All rights reserved.

Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers.

We demonstrate a method to realize vertically oriented Ge nanowires on Si(111) substrates. Ge nanowires were grown by chemical vapor deposition using Au nanoparticles to seed nanowire growth via a vapor-liquid-solid growth mechanism. Rapid oxidation of Si during Au nanoparticle application inhibits the growth of vertically oriented Ge nanowires directly on Si. The present method employs thin Ge buffer layers grown at low temperature less than 600 degrees C to circumvent the oxidation problem. By using a thin Ge buffer layer with root-mean-square roughness of approximately 2 nm, the yield of vertically oriented Ge nanowires is as high as 96.3%. This yield is comparable to that of homoepitaxial Ge nanowires. Furthermore, branched Ge nanowires could be successfully grown on these vertically oriented Ge nanowires by a secondary seeding technique. Since the buffer layers are grown under moderate conditions without any high temperature processing steps, this method has a wide process window highly suitable for Si-based microelectronics.