Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering

Band alignment of resistive random access memory (RRAM) switching material Ta2O5 and different metal electrode materials was examined using high-resolution X-ray photoelectron spectroscopy. Schottky and hole barrier heights at the interface between electrode and Ta2O 5 were obtained, where the electrodes consist of materials with low to high work function (Φ m, v a c from 4.06 to 5.93 eV). Effective metal work functions were extracted to study the Fermi level pinning effect and to discuss the dominant conduction mechanism. An accurate band alignment between electrodes and Ta2O5 is obtained and can be used for RRAM electrode engineering and conduction mechanism study. © 2013 American Institute of Physics.

Random lasing in a bistable smectic A liquid crystal

In this work, we examine the phenomenon of random lasing from the smectic A liquid crystal phase. We summarise our results to date on random lasing from the smectic A phase including the ability to control the output from the sample using applied electric fields. In addition, diffuse random lasing is demonstrated from the electrohydrodynamic instabilities of a smectic A liquid crystal phase that has been doped with a low concentration of ionic impurities. Using a siloxane-based liquid crystal doped with ionic impurities and a laser dye, nonresonant random laser emission is observed from the highly scattering texture of the smectic A phase which is stable in zero-field. With the application of a low frequency alternating current electric field, turbulence is induced due to motion of the ions. This is accompanied by a decrease in the emission linewidth and an increase in the intensity of the laser emission. The benefit in this case is that a field is not required to maintain the texture as the scattering and homeotropic states are both stable in zero field. This offers a lower power consumption alternative to the electric-field induced static scattering sample.