Very high modulation efficiency two-sections tapered laser diode at 1060nm for free space optical communications

High-power (more than 500 mW) and high-speed (more than 1 Gbps) tapered lasers at 1060 nm are required in free-space optical communications and (at lower frequencies of around 100 MHz) display applications for frequency doubling to the green. On a 3 mm long tapered laser, we have obtained an open eye diagram at 1 Gbps, together with a high extinction ratio of 11 dB, an optical modulation amplitude of 530 mW, and a high modulation efficiency of 13 W/A. On a 4 mm-long tapered laser, we have obtained an open eye diagram at 700 Mbps, together with a high extinction ratio of 19 dB, a high optical modulation amplitude of 1.6 W, and a very high modulation efficiency of 19 W/A. On a 6 mm-long tapered laser, we have obtained a very high power of 5W CW and a very high static modulation efficiency of 59.8 W/A. © 2011 SPIE.

Effects of high-order laser distortion products in radio over free-space optical links

RoFSO links are found to be susceptible to high-order laser distortion making conventional SFDR ineffective as a performance indicator. For the first time, peak input power is demonstrated as a service-independent bound on dynamic range. © 2011 OSA.

First demonstration of two photon absorption in a semiconductor waveguide pumped by a diode laser

For the first time, lasers have been used to induce a fast all-optical nonresonant nonlinearity at wavelengths well beyond the band edge in a GaAs/GaAlAs multiquantum well waveguide. Using a Q-switched diode laser, which gave optical pulses of 3.5 ps duration and 7 W peak power, an intensity-dependent transmission was recorded that was consistent with the presence of two photon absorption in the waveguide. The measured two photon absorption coefficient was 11 ± 2cm/GW.

Low power all-optical switch in a passive InGaAsP multiple quantum well waveguide

We demonstrate the use of resonant bandfilling nonlinearity in an InGaAsP/InGaAsP Multiple Quantum Well (MQW) waveguide due to photogenerated carriers to obtain switching at pulse powers, which can readily be obtained from an erbium amplified diode laser source. In order to produce gating a polarisation rotation gate was used, which relies on an asymmetry in the nonlinear refraction on the principle axes of the waveguide.

Ultrafast all-optical wavelength conversion using an integrated amplifier/DFB laser

Wavelength conversion in the 1550 nm regime was achieved in an integrated semiconductor optical amplifier (SOA)/DFB laser by modulating the output power of the laser with a light beam of a different wavelength externally injected into the SOA section. A 12 dB output extinction ratio was obtained for an average coupled input power of 75 μW with the laser section driven at 65 mA and the amplifier section at 180 mA. The response time achieved was as low as 13 ps with the laser biased at 175 mA even with low extinction ratios. The laser exhibits a similar recovery time allowing potentially very high bit-rate operation.

High speed wavelength conversion utilising an integrated amplifier/DFB laser

Wavelength conversion in the 1.55-μm regime was achieved for the first time in an integrated SOA/DFB laser by modulating the output power of the laser with a light beam of a different wavelength externally injected into the SOA section. In terms of speed, response times as low as 13ps were observed, though at the expense of reduced extinction ratio. Generally, these results indicate that operation in the 10s of GB/s should be possible.

10-Gbits/s all-optical 3R regeneration and format conversion using a gain-switched DFB laser

A strain-compensated multiple quantum well device is used as a DFB laser, this has been optimized for low jitter gain switched operation at 10 GHz. The signal is transmitted down 80 km of standard fiber then amplified, filtered and polarization controlled before being injected into a DFB laser. The purpose of this regeneration process is to gain switch the DFB with the extracted clock signal in order to retime the converted signal. This process also simultaneously converts the input NRZ format to an output RZ data to format and results in a signal whose optical power and extinction ratio are considerably improved by the regeneration process.

Nanotube-based passively mode-locked Raman laser

We demonstrate passive mode-locking of a Raman fiber laser using a nanotube-based saturable absorber. The normal dispersion cavity generates highly-chirped 500 ps pulses that are compressed down to 2 ps, with 1.4 kW peak power. © 2011 OSA.

Variable repetition frequency femtosecond-pulse surface emitting semiconductor laser

We report a femtosecond-pulse vertical-external-cavity surface-emitting laser with a continuous repetition frequency tuning range of 8 near 1 GHz. A constant average output power of 56 ± 1 mW and near-transform-limited pulse duration of 450 ± 20 fs were observed across the entire tuning range. © 2011 American Institute of Physics.

Significant improvements in optical power budgets of real-time optical OFDM PON systems.

Based on a comprehensive theoretical optical orthogonal frequency division multiplexing (OOFDM) system model rigorously verified by comparing numerical results with end-to-end real-time experimental measurements at 11.25Gb/s, detailed explorations are undertaken, for the first time, of the impacts of various physical factors on the OOFDM system performance over directly modulated DFB laser (DML)-based, intensity modulation and direct detection (IMDD), single-mode fibre (SMF) systems without in-line optical amplification and chromatic dispersion compensation. It is shown that the low extinction ratio (ER) of the DML modulated OOFDM signal is the predominant factor limiting the maximum achievable optical power budget, and the subcarrier intermixing effect associated with square-law photon detection in the receiver reduces the optical power budget by at least 1dB. Results also indicate that, immediately after the DML in the transmitter, the insertion of a 0.02nm bandwidth optical Gaussian bandpass filter with a 0.01nm wavelength offset with respect to the optical carrier wavelength can enhance the OOFDM signal ER by approximately 1.24dB, thus resulting in a 7dB optical power budget improvement at a total channel BER of 1 × 10(-3).

7dB optical power budget improvements of optical OFDM PON systems using narrow optical filters

The use of 0.02nm bandwidth optical bandpass filters with 0.01nm wavelength offsets from optical carrier wavelengths in the optical OFDM (OOFDM) transmitter improves optical power budgets by 7dB at a total channel BER of 1×10 -3 in directly modulated laser-based IMDD PON systems. ©2010 Optical Society of America.

External-cavity mode-locked quantum-dot laser diodes for low repetition rate, sub-picosecond pulse generation

This paper presents an investigation of the mode-locking performance of a two-section external-cavity mode-locked InGaAs quantum-dot laser diode, focusing on repetition rate, pulse duration and pulse energy. The lowest repetition rate to-date of any passively mode-locked semiconductor laser diode is demonstrated (310 MHz) and a restriction on the pulse energy (at 0.4 pJ) for the shortest pulse durations is identified. Fundamental mode-locking from 310 MHz to 1.1 GHz was investigated, and harmonic mode-locking was achieved up to a repetition rate of 4.4 GHz. Fourier transform limited subpicosecond pulse generation was realized through implementation of an intra-cavity glass etalon, and pulse durations from 930fs to 8.3ps were demonstrated for a repetition rate of 1 GHz. For all investigations, mode-locking with the shortest pulse durations yielded constant pulse energies of ∼0.4 pJ, revealing an independence of the pulse energy on all the mode-locking parameters investigated (cavity configuration, driving conditions, pulse duration, repetition rate, and output power). © 2011 IEEE.

Theoretical model for dicke superradiance in a semiconductor laser device

A theoretical model for Dicke superradiance (SR) in diode lasers is proposed using the travelling wave method with a spatially resolved absorber and spectrally resolved gain. The role of electrode configuration and optical bandwidth are compared and contrasted as a route to enhance femtosecond pulse power. While pulse duration can be significantly reduced through careful absorber length specification, stability is degraded. However an increased spectral gain bandwidth of up to 150 nm is predicted to allow pulsewidth reductions of down to 10 fs and over 500-W peak power without further degradation in pulse stability. © 2011 IEEE.

Hardfacing using supersonic laser depostion of stellite-6

The capability of manufacturing coatings is of central importance in engineering design. Many components require nowadays the application of additional layers, to enhance mechanical properties and protect against hostile environments. Supersonic Laser Deposition (SLD) is a novel coating method, based upon Cold Spray (CS) principles. In this technique the deposition velocities can be significantly lower than those required for effective bonding in CS applications. The addition of laser heat energy permits a change in the thermodynamic experience of impacting particles, thereby offering a greater opportunity for metallurgical bonding at lower velocities compared to the CS process technology. The work reported in this paper demonstrates the ability of the SLD process to deliver hard facing materials to engineering surfaces. Stellite-6 has been deposited on low carbon steel tubes over a range of process parameters, determining the appropriate target power and traverse speeds for coating deposition. Coating properties and parameters were examined to determine the main properties, micro-structure and processing cost. Their morphology was studied through optical microscopy, SEM and X-Ray Diffraction. The results have shown that SLD is capable of depositing Stellite-6, with enhanced properties compared to laser clad counterparts.

Mode-locked and single-longitudinal-mode waveguide lasers fabricated by femtosecond laser pulses in Er:Yb-doped phosphate glass

Mode-locked and single-longitudinal-mode waveguide lasers, manufactured by femtosecond laser writing in Er-Yb-doped phosphate glasses, are presented. Transform-limited 1.6-ps pulses and a cw output power exceeding 50 mW have been obtained in the two regimes. © 2007 Optical Society of America.