Characterisation of impact response of metallic foam/ceramic laminates

The impact response of laminated composites consisting of alternate layers of AI ahoy foam and Al2O3 was studied experimentally in low and intermediate velocity regimes. Low velocity impacts (1.2-2.8 m s(-1)) were conducted using an instrumented falling weight apparatus and were compared with static indentation tests (0.2 x 10(-4) m s(-1)). Intermediate velocity impacts were carried out by means of both Hopkinson bar (60 m s(-1)) and gas gun (200 m s(-1)) tests, Post-impact damage was assessed using X-ray radiography and microscopy, It was found that there is good correlation between low velocity impact and quasi-static responses. In both cases, penetration of the layered targets resulted in the formation of a distinctive plug. Increasing impact velocity (intermediate velocity range) snitched the penetration mode from plugging to fragmentation, giving rise to an increase in the absorbed energy. In this range, impacts led to localisation of damage in the region under the projectile, Furthermore, a comparison has been made between the penetration response of foam laminates and dense metal laminates of equivalent areal density. Preliminary results suggest that the dense metal laminates are superseded by the foam laminates on an energy absorption basis.

Isotropic constitutive models for metallic foams

The yield behaviour of two aluminum alloy foams (Alporas and Duocel) has been investigated for a range of axisymmetric compressive stress states. The initial yield surface has been measured, and the evolution of the yield surface has been explored for uniaxial and hydrostatic stress paths. It is found that the hydrostatic yield strength is of similar magnitude to the uniaxial yield strength. The yield surfaces are of quadratic shape in the stress space of mean stress versus effective stress, and evolve without corner formation. Two phenomenological isotropic constitutive models for the plastic behaviour are proposed. The first is based on a geometrically self-similar yield surface while the second is more complex and allows for a change in shape of the yield surface due to differential hardening along the hydrostatic and deviatoric axes. Good agreement is observed between the experimentally measured stress versus strain responses and the predictions of the models.

Low temperature (< 100 °c) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.