Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation. © 2013 AIP Publishing LLC.

The interaction of riblets with wall-bounded turbulence

The purpose of this thesis is to give answer to the question: why do riblets stop working for a certain size? Riblets are small surface grooves aligned in the mean direction of an overlying turbulent flow, designed specifically to reduce the friction between the flow and the surface. They were inspired by biological surfaces, like the oriented denticles in the skin of fastswimming sharks, and were the focus of a significant amount of research in the late eighties and nineties. Although it was found that the drag reduction depends on the riblet size scaled in wall units, the physical mechanisms implicated have not been completely understood up to now. It has been explained how riblets of vanishing size interact with the turbulent flow, producing a change in the drag proportional to their size, but that is not the regime of practical interest. The optimum performance is achieved for larger sizes, once that linear behavior has broken down, but before riblets begin adopting the character of regular roughness and increasing drag. This regime, which is the most relevant from a technological perspective, was precisely the less understood, so we have focused on it. Our efforts have followed three basic directions. First, we have re-assessed the available experimental data, seeking to identify common characteristics in the optimum regime across the different existing riblet geometries. This study has led to the proposal of a new length scale, the square root of the groove crosssection, to substitute the traditional peak-to-peak spacing. Scaling the riblet dimension with this length, the size of breakdown of the linear behavior becomes roughly universal. This suggests that the onset of the breakdown is related to a certain, fixed value of the cross-section of the groove. Second, we have conducted a set of direct numerical simulations of the turbulent flow over riblets, for sizes spanning the full drag reduction range. We have thus been able to reproduce the gradual transition between the different regimes. The spectral analysis of the flows has proven particularly fruitful, since it has made possible to identify spanwise rollers immediately above the riblets, which begin to appear when the riblet size is close to the optimum. This is a quite surprising feature of the flow, not because of the uniqueness of the phenomenon, which had been reported before for other types of complex and porous surfaces, but because most previous studies had focused on the detail of the flow above each riblet as a unit. Our novel approach has provided the adequate tools to capture coherent structures with an extended spanwise support, which interact with the riblets not individually, but collectively. We have also proven that those spanwise structures are responsible for the increase in drag past the viscous breakdown. Finally, we have analyzed the stability of the flow with a simplified model that connects the appearance of rollers to a Kelvin–Helmholtz-like instability, as is the case also for the flow over plant canopies and porous surfaces. In spite of the model emulating the presence of riblets only in an averaged, general fashion, it succeeds to capture the essential attributes of the breakdown, and provides a theoretical justification for the scaling with the groove cross-section.

Locally oxidized silicon surface-plasmon Schottky detector for telecom regime.

We experimentally demonstrate an on-chip nanoscale silicon surface-plasmon Schottky photodetector based on internal photoemission process and operating at telecom wavelengths. The device is fabricated using a self-aligned approach of local-oxidation of silicon (LOCOS) on silicon on insulator substrate, which provides compatibility with standard complementary metal-oxide semiconductor technology and enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. Additionally, LOCOS technique allows avoiding lateral misalignment between the silicon surface and the metal layer to form a nanoscale Schottky contact. The fabricated devices showed enhanced detection capability for shorter wavelengths that is attributed to increased probability of the internal photoemission process. We found the responsivity of the nanodetector to be 0.25 and 13.3 mA/W for incident optical wavelengths of 1.55 and 1.31 μm, respectively. The presented device can be integrated with other nanophotonic and nanoplasmonic structures for the realization of monolithic opto-electronic circuitry on-chip.

Locally oxidized silicon surface-plasmon Schottky detector for telecom regime

We experimentally demonstrate an on-chip nanoscale silicon surface-plasmon Schottky photodetector based on internal photoemission process and operating at telecom wavelengths. The device is fabricated using a self-aligned approach of local-oxidation of silicon (LOCOS) on silicon on insulator substrate, which provides compatibility with standard complementary metal-oxide semiconductor technology and enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. Additionally, LOCOS technique allows avoiding lateral misalignment between the silicon surface and the metal layer to form a nanoscale Schottky contact. The fabricated devices showed enhanced detection capability for shorter wavelengths that is attributed to increased probability of the internal photoemission process. We found the responsivity of the nanodetector to be 0.25 and 13.3 mA/W for incident optical wavelengths of 1.55 and 1.31 μm, respectively. The presented device can be integrated with other nanophotonic and nanoplasmonic structures for the realization of monolithic opto-electronic circuitry on-chip. © 2011 American Chemical Society.

Control of normal shock wave / turbulent boundary-layer interaction using streamwise slots

The effect of streamwise slots on the interaction of a normal shock wave / turbulent boundary layer has been investigated experimentally at a Mach number of 1.3. The surface pressure distribution for the controlled interaction was found to be significantly smeared, featuring a distinct plateau. This was due to a change in shock structure from a typical unseparated normal shock wave boundary layer interaction to a large bifurcated Lambda type shock pattern. Boundary layer velocity measurements downstream of the slots revealed a strong spanwise variation of boundary layer properties whereas the modified shock structure was relatively twodimensional. Oil flow visualisation indicated that in the presence of slots the boundary layer surface flow was highly three dimensional and confirmed that the effect of slots was mainly due to suction and blowing similar to that for passive control with uniform surface ventilation. Three hole probe measurements confirmed that the boundary layer was three dimensional and that the slots introduced vortical motion into the flowfield. Results indicate that when applied to an aerofoil, the control device has the potential to reduce wave drag while incurring only small viscous penalties. The introduction of streamwise vorticity may also be beneficial to delay trailing edge separation and the device is thought to be capable of postponing buffet onset. © 2001 by A N Smith.