Stiffness of clays and silts: Normalizing shear modulus and shear strain

An analysis is presented of a database of 67 tests on 21 clays and silts of undrained shear stress-strain data of fine-grained soils. Normalizations of secant G in terms of initial mean effective stress p9 (i.e., G=p9 versus log g) or undrained shear strength cu (i.e., G=cu versus log g) are shown to be much less successful in reducing the scatter between different clays than the approach that uses the maximum shear modulus,Gmax, a technique still not universally adopted by geotechnical researchers and constitutive modelers. Analysis of semiempirical expressions forGmax is presented and a simple expression that uses only a void-ratio function and a confining-stress function is proposed. This is shown to be superior to a Hardin-style equation, and the void ratio function is demonstrated as an alternative to an overconsolidation ratio (OCR) function. To derive correlations that offer reliable estimates of secant stiffness at any required magnitude of working strain, secant shear modulus G is normalized with respect to its small-strain value Gmax, and shear strain g is normalized with respect to a reference strain gref at which this stiffness has halved. The data are corrected to two standard strain rates to reduce the discrepancy between data obtained from static and cyclic testing. The reference strain gref is approximated as a function of the plasticity index.Aunique normalized shear modulus reduction curve in the shape of a modified hyperbola is fitted to all the available data up to shear strains of the order of 1%. As a result, good estimates can be made of the modulus reduction G/Gmax ±30% across all strain levels in approximately 90% of the cases studied. New design charts are proposed to update the commonly used design curves. © 2013 American Society of Civil Engineers.

Locally oxidized silicon surface-plasmon Schottky detector for telecom regime

We experimentally demonstrate an on-chip nanoscale silicon surface-plasmon Schottky photodetector based on internal photoemission process and operating at telecom wavelengths. The device is fabricated using a self-aligned approach of local-oxidation of silicon (LOCOS) on silicon on insulator substrate, which provides compatibility with standard complementary metal-oxide semiconductor technology and enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. Additionally, LOCOS technique allows avoiding lateral misalignment between the silicon surface and the metal layer to form a nanoscale Schottky contact. The fabricated devices showed enhanced detection capability for shorter wavelengths that is attributed to increased probability of the internal photoemission process. We found the responsivity of the nanodetector to be 0.25 and 13.3 mA/W for incident optical wavelengths of 1.55 and 1.31 μm, respectively. The presented device can be integrated with other nanophotonic and nanoplasmonic structures for the realization of monolithic opto-electronic circuitry on-chip. © 2011 American Chemical Society.

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO4 polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices. © 2013 American Chemical Society.

Tunable Rashba effect in two-dimensional LaOBiS2 films: Ultrathin candidates for spin field effect transistors

Rashba spin splitting is a two-dimensional (2D) relativistic effect closely related to spintronics. However, so far there is no pristine 2D material to exhibit enough Rashba splitting for the fabrication of ultrathin spintronic devices, such as spin field effect transistors (SFET). On the basis of first-principles calculations, we predict that the stable 2D LaOBiS2 with only 1 nm of thickness can produce remarkable Rashba spin splitting with a magnitude of 100 meV. Because the medium La2O2 layer produces a strong polar field and acts as a blocking barrier, two counter-helical Rashba spin polarizations are localized at different BiS 2 layers. The Rashba parameter can be effectively tuned by the intrinsic strain, while the bandgap and the helical direction of spin states sensitively depends on the external electric field. We propose an advanced Datta-Das SFET model that consists of dual gates and 2D LaOBiS2 channels by selecting different Rashba states to achieve the on-off switch via electric fields. © 2013 American Chemical Society.