52 resultados para Improvement Plan


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The desire to design more efficient transport aircraft has led to many different attempts to minimize drag. One approach is the use of three-dimensional shock control bumps, which have gained popularity in the research community as simple, efficient and robust devices capable of reducing the wave drag of transonic wings. This paper presents a computational study of the performance of three-dimensional bumps, relating key bump design variables to the overall wing aerodynamic performance. An efficient parameterization scheme allows three-dimensional bumps to be directly compared to two-dimensional designs, indicating that two-dimensional bumps are capable of greater design point aerodynamic performance in the transonic regime. An advantage of three-dimensional bumps lies in the production of streamwise vortices, such that, while two-dimensional bumps are capable of superior performance near the design point, three-dimensional bumps are capable of breakingup regions of separated flow at high Mach numbers, suggesting improvement in terms of buffet margin. A range of bump designs are developed that exhibit a tradeoff between design point aerodynamic efficiency and improvementinbuffet margin, indicating the potential for bespoke designs to be generated for different sections of a wing based on its flow characteristics. Copyright © 2012 by Jeremy Eastwood and Jerome Jarrett.

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We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-liquid-solid (VLS) growth mechanism with Au catalysts by metal-organic chemical vapor deposition (MOCVD). By using annealed thin GaAs buffer layers on the surface of Si substrates, most nanowires are grown on the substrates straight, following (111) direction; by using two temperature growth, the nanowires were grown free from structural defects, such as twin defects and stacking faults. Systematic experiments about buffer layers indicate that V/III ratio of precursor and growth temperature can affect the morphology and quality of the buffer layers. Especially, heterostructural buffer layers grown with different V/III ratios and temperatures and in-situ post-annealing step are very helpful to grow well arranged, vertical GaAs nanowires on Si substrates. The initial nanowires having some structural defects can be defect-free by two-temperature growth mode with improved optical property, which shows us positive possibility for optoelectronic device application. ©2010 IEEE.

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Relatively new in the UK, soil mix technology applied to the in-situ remediation of contaminated land involves the use of mixing tools and additives to construct permeable reactive in-ground barriers and low-permeability containment walls and for hot-spot soil treatment by stabilisation/ solidification. It is a cost effective and versatile approach with numerous environmental advantages. Further commercial advantages can be realised by combining this with ground improvement through the development of a single integrated soil mix technology system which is the core objective of Project SMiRT (Soil Mix Remediation Technology). This is a large UK-based R&D project involving academia-industry collaboration with a number of tasks including equipment development, laboratory treatability studies, field trials, stakeholder consultation and dissemination activities. This paper presents aspects of project SMiRT relating to the laboratory treatability study work leading to the design of the field trials. © 2012 American Society of Civil Engineers.

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We propose a new practical multimode fiber optical launch scheme, providing near single mode group excitation for >5 times transmission bandwidth improvement. Equalization-free transmission of a 10-Gb/s signal over 220-m fiber is achieved in experimental demonstrations. © 2010 Optical Society of America.

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