Theoretical and numerical investigation of SiC JFET and MOSFET at 6.5 kV

This paper presents a preliminary theoretical and numerical investigation of 4H-SiC JFET and MOSFET at 6.5 kV. To improve the on-state/breakdown performance of the JFET, buried layers in conjunction with a highly doped buffer layer have been used. Trench technology has been employed for the MOSFET. The devices were simulated and optimized using MEDICI[I] simulator. From the comparison between the two devices, it turns out that the JFET offers a better on-state/breakdown trade-off, while the trench MOSFET has the advantage of MOS-control.

New chiral mesogens 3(R)-methylcyclohexanone derivatives

New chiral compounds 3R-methylcyclohexanone derivatives were synthesized. These compounds were revealed to exhibit the mesomorphic behavior within rather wide temperature ranges. Types of formed mesophases and phase transition temperatures were determined by polarizing microscopy, differential scanning calorimetry and small angle scattering of X-ray. Mesomorphic properties of the new chiral compounds were compared with those for the chiral 2-arylidene derivatives of 3R,6R-3-methyl-6-isopropylcyclohexanone (d-isomenthone) studied earlier. Distinctions between these two types of compounds in an ability to form mesophases and also in twisting properties as chiral dopants in induced cholesteric mesophases are considered.

A fast 600-V Tandem PiN Schottky (TPS) rectifier with ultra-low on-state voltage

The Tandem PiN Schottky (TPS) rectifier features lowly-doped p-layers in both active and termination regions, and is applied in 600-V rating for the first time. In the active region, the Schottky contact is in series connection with a transparent p-layer, leading to a superior forward performance than the conventional diodes. In addition, due to the benefit of moderate hole injection from the p-layer, the TPS offers a better trade-off between the on-state voltage and the switching speed. The active p-layer also helps to stabilise the Schottky contact, and hence the electrical data distributions are more concentrated. Regarding the floating p-layer in the termination region, its purpose is to reduce the peak electric fields, and the TPS demonstrates a high breakdown voltage with a compact termination width, less than 70% of the state-of-the-art devices on the market. Experimental results have shown that the 600-V TPS rectifier has an ultra-low on-state voltage of 0.98 V at 250 A/cm 2, a fast turn-off time of 75 ns by the standard RG1 test (I F=0.5A, I R=1A, and I RR=0.25A) and a breakdown voltage over 720 V. It is noteworthy that the p-layers in the active and termination regions can be formed at no extra cost for the use of self-alignment process. © 2012 IEEE.

Oscillations in a decentralized economic network

The study of exchange markets dates back to LeonWalras's general equilibrium theory. Since then the economic market has been studied for its' equilibrium properties, fairness of allocations of private and public goods, and even the psychological incentives of participants. This paper studies the dynamics of an exchange economy built on a network of markets where consumers trade with suppliers to optimize utility. Viewing the market in as a decentralized network we study the system from the usual control theory point of view, evaluating the system's dynamic performance, stability and robustness. It is shown that certain consumer demand dynamics can lead to oscillations while others can converge to optimal allocations. © 2011 IFAC.

Product life trade-offs: what if products fail early?

Increasing product life allows the embodied emissions in products to be spread across a longer period but can mean that opportunities to improve use-phase efficiency are foregone. In this paper, a model that evaluates this trade-off is presented and used to estimate the optimal product life for a range of metal-intensive products. Two strategies that have potential to save emissions are explored: (1) adding extra embodied emissions to make products more sturdy, increasing product life, and (2) increasing frequency of use, causing early product failure to take advantage of improvements in use-phase efficiency. These strategies are evaluated for two specific case studies (long-life washing machines and more frequent use of vehicles through car clubs) and for a range of embodied and use-phase intensive products under different use-phase improvement rate assumptions. Particular emphasis is placed on the fact that products often fail neither at their design life nor at their optimal life. Policy recommendations are then made regarding the targeting of these strategies according to product characteristics and the timing of typical product failure relative to optimal product life.

Electrical and optical properties of ion implanted SOI-based photonic crystals

We investigate the electrical properties of Silicon-on-Insulator photonic crystals as a function of doping level and air filling factor. A very interesting trade-off between conductivity and optical losses in L3 cavities is also found. © 2011 IEEE.

Electrical conduction and optical properties of doped silicon-on-insulator photonic crystals

We investigate the electrical properties of silicon-on-insulator (SOI) photonic crystals as a function of both doping level and air filling factor. The resistance trends can be clearly explained by the presence of a depletion region around the sidewalls of the holes that is caused by band pinning at the surface. To understand the trade-off between the carrier transport and the optical losses due to free electrons in the doped SOI, we also measured the resonant modes of L3 photonic crystal nanocavities and found that surprisingly high doping levels, up to 1018 / cm3, are acceptable for practical devices with Q factors as high as 4× 104. © 2011 American Institute of Physics.