50 resultados para Dialogue with the artwork


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Gallium nitride (GaN) has a bright future in high voltage device owing to its remarkable physical properties and the possibility of growing heterostructures on silicon substrates. GaN High Electron Mobility Transistors (HEMTs) are expected to make a strong impact in off line applications and LED drives. However, unlike in silicon-based power devices, the on-state resistance of HEMT devices is hugely influenced by donor and acceptor traps at interfaces and in the bulk. This study focuses on the influence of donor traps located at the top interface between the semiconductor layer and the silicon nitride on the 2DEG density. It is shown through TCAD simulations and analytical study that the 2DEG charge density has an 'S' shape variation with two distinctive 'flat' regions, wherein it is not affected by the donor concentration, and one linear region. wherein the channel density increases proportionally with the donor concentration. We also show that the upper threshold value of the donor concentration within this 'S' shape increases significantly with the AIGaN thickness and the Al mole fraction and is highly affected by the presence of a thin GaN cap layer. © 2013 IEEE.

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Historically, waste pickers around the globe have utilised urban solid waste as a principal source of livelihood. Formal waste management sectors usually perceive the informal waste collection/recycling networks as backward, unhygienic and generally incompatible with modern waste management systems. It is proposed here that through careful planning and administration, these seemingly troublesome informal networks can be integrated into formal waste management systems in developing countries, providing mutual benefits. A theoretical framework for integration based on a case study in Lahore, Pakistan, is presented. The proposed solution suggests that the municipal authority should draw up and agree on a formal work contract with the group of waste pickers already operating in the area. The proposed system is assessed using the integration radar framework to classify and analyse possible intervention points between the sectors. The integration of the informal waste workers with the formal waste management sector is not a one dimensional or single step process. An ideal solution might aim for a balanced focus on all four categories of intervention, although this may be influenced by local conditions. Not all the positive benefits will be immediately apparent, but it is expected that as the acceptance of such projects increases over time, the informal recycling economy will financially supplement the formal system in many ways. © The Author(s) 2013.

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The development of infrastructure in major cities often involves tunnelling, which can cause damage to existing structures. Therefore, these projects require a careful prediction of the risk of settlement induced damage. The simplified approach of current methods cannot account for three-dimensional structural aspects of buildings, which can result in an inaccurate evaluation of damage. This paper investigates the effect of the building alignment with the tunnel axis on structural damage. A three-dimensional, phased, fully coupled finite element model with non-linear material properties is used as a tool to perform a parametric study. The model includes the simulation of the tunnel construction process, with the tunnel located adjacent to a masonry building. Three different type of settlements are included (sagging, hogging and a combination of them), with seven different increasing angles of the building with respect to the tunnel axis. The alignment parameter is assessed, based on the maximum occurring crack width, measured in the building. Results show a significant dependency of the final damage on the building and tunnel alignment.