Real-time block flow tracking of atrial septal defect motion in 4D cardiac ultrasound

Real-time cardiac ultrasound allows monitoring the heart motion during intracardiac beating heart procedures. Our application assists atrial septal defect (ASD) closure techniques using real-time 3D ultrasound guidance. One major image processing challenge is the processing of information at high frame rate. We present an optimized block flow technique, which combines the probability-based velocity computation for an entire block with template matching. We propose adapted similarity constraints both from frame to frame, to conserve energy, and globally, to minimize errors. We show tracking results on eight in-vivo 4D datasets acquired from porcine beating-heart procedures. Computing velocity at the block level with an optimized scheme, our technique tracks ASD motion at 41 frames/s. We analyze the errors of motion estimation and retrieve the cardiac cycle in ungated images. © 2007 IEEE.

Vibration response of a wind-turbine planetary gear set in the presence of a localized planet bearing defect

In a wind-turbine gearbox, planet bearings exhibit a high failure rate and are considered as one of the most critical components. Development of efficient vibration based fault detection methods for these bearings requires a thorough understanding of their vibration signature. Much work has been done to study the vibration properties of healthy planetary gear sets and to identify fault frequencies in fixed-axis bearings. However, vibration characteristics of planetary gear sets containing localized planet bearing defects (spalls or pits) have not been studied so far. In this paper, we propose a novel analytical model of a planetary gear set with ring gear flexibility and localized bearing defects as two key features. The model is used to simulate the vibration response of a planetary system in the presence of a defective planet bearing with faults on inner or outer raceway. The characteristic fault signature of a planetary bearing defect is determined and sources of modulation sidebands are identified. The findings from this work will be useful to improve existing sensor placement strategies and to develop more sophisticated fault detection algorithms. Copyright © 2011 by ASME.

Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy.

We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core-shell encapsulation techniques on the electronic properties of GaAs nanowires. We demonstrate that two-temperature growth of the GaAs core leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime. In addition, overcoating the GaAs core with a larger-bandgap material is shown to reduce the density of surface traps by 82%, thereby enhancing the charge conductivity.

Defect-free GaAs/AlGaAs Core-shell nanowires on Si substrates

We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by metal-organic chemical vapor deposition. By deposition of thin GaAs buffer layers on Si substrates, these nanowires could be grown on the buffer layers with much less stringent conditions as otherwise imposed by epitaxy of III-V compounds on Si. Also, crystal-defect-free GaAs nanowires were grown by using either a two-temperature growth mode consisting of a short initial nucleation step under higher temperature followed by subsequent growth under lower temperature or a rapid growth rate mode with high source flow rate. These two growth modes not only eliminated planar crystallographic defects but also significantly reduced tapering. Core-shell GaAs-AlGaAs nanowires grown by the two-temperature growth mode showed improved optical properties with strong photoluminescence and long carrier life times. © 2011 American Chemical Society.

Defect-assisted sub-bandgap avalanche photodetection in interleaved carrier-depletion silicon waveguide for telecom band

This paper demonstrates on chip sub bandgap detection of light at 1550 nm wavelength using the configuration of interleaved PN junctions along a silicon waveguide. The device operates under reverse bias in a nearly fully depleted mode, thus minimizing the free carrier plasma losses and significantly increases the detection volume at the same time. Furthermore, substantial enhancement in responsivity is observed by the transition from reverse bias to avalanche breakdown regime. The observed high responsivity of up to 7.2 mA/W at 3 V is attributed to defect assisted photogeneration, where the defects are related to the surface and the bulk of the waveguide. © 2014 AIP Publishing LLC.