Soft ferrite used as thermal-magnetic conversion intermedium in the flux pumping technology

Recent progress in material science has proved that high-temperature superconductors, such as bulk melt-processed yttrium barium copper oxide (YBCO) single domains, have a great potential to trap significant magnetic fields. In this paper, we will describe a novel method of YBCO magnetization that only requires the applied field to be at the level of a permanent magnet. Instead of applying a pulsed high magnetic field on the YBCO, a thermally actuated material (TAM), such as Mg0.15}hbox{Cu}0.15} hbox{Zn0.7 Ti0.04}Fe1.96boxO4, has been used as an intermedium to create a travelling magnetic field by changing the local temperature so that the local permeability is changed to build up the magnetization of the YBCO gradually after multiple pumping cycles. It is well known that the relative permeability of ferrite is a function of temperature and its electromagnetic properties can be greatly changed by adding dopants such as Mg or Ti; therefore, it is considered to be the most promising TAM for future flux pumping technology. Ferrite samples were fabricated by means of the conventional ceramic method with different dopants. Zinc and iron oxides were used as raw materials. The samples were sintered at 1100 C, 1200 C} , and 1300 C. The relative permeability of the samples was measured at temperatures ranging from 77 to 300 K. This work investigates the variation of the magnetic properties of ferrites with different heat treatments and doping elements and gives a smart insight into finding better ferrites suitable for flux pumping technology. © 2002-2011 IEEE.

Optical properties of silicon rich oxides

Thermally treated silicon rich oxides (SRO) used as starting material for the fabrication of silicon nanodots represent the basis of tunable bandgap nanostructured materials for optoelectronic and photonic applications. The optical modelization of such materials is of great interest, as it allows the simulation of reflectance and transmittance (R&T) spectra, which is a powerful non destructive tool in the determination of phase modifications (clustering, precipitation of new phases, crystallization) upon thermal treatments. In this paper, we study the optical properties of a variety of as-deposited and furnace annealed SRO materials. The different phases are treated by means of the effective medium approximation. Upon annealing at low temperature, R&T spectra show the precipitation of amorphous silicon nanoparticles, while the crystallization occurring at temperatures higher than 1000 °C is also clearly identified, in agreement with structural results. The existing literature on the optical properties of the silicon nanocrystals is reviewed, with attention on the specificity of the compositional and structural characteristics of the involved material. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nature of the electronic band gap in lanthanide oxides

Accurate electronic structures of the technologically important lanthanide/rare-earth sesquioxides (Ln2O3, with Ln=La, ⋯,Lu) and CeO2 have been calculated using hybrid density functionals HSE03, HSE06, and screened exchange (sX-LDA). We find that these density functional methods describe the strongly correlated Ln f electrons as well as the recent G0W0@LDA+U results, generally yielding the correct band gaps and trends across the Ln period. For HSE, the band gap between O 2p states and lanthanide 5d states is nearly independent of the lanthanide, while the minimum gap varies as filled or empty Ln 4f states come into this gap. sX-LDA predicts the unoccupied 4f levels at higher energies, which leads to a better agreement with experiments for Sm2O 3, Eu2O3, and Yb2O3. © 2013 American Physical Society.

Dopant compensation in HfO2 and other high K oxides

The theory of doping limits in semiconductors and insulators is applied to the case of wide gap oxides, crystalline, or amorphous, and used to explain that impurities do not in general give rise to gap states or a doping response. Instead, the system tends to form defect complexes or undergo symmetry-lowering reconstructions to expel gap states out of the band gap. The model is applied to impurities, such as trivalent metals, carbon, N, P, and B, in HfO2, the main gate dielectric used in field effect transistors. © 2014 AIP Publishing LLC.