Study of spike and modal stall phenomena in a low-speed axial compressor

This paper presents a study of stall inception mechanisms a in low-speed axial compressor. Previous work has identified two common flow breakdown sequences, the first associated with a short lengthscale disturbance known as a `spike', and the second with a longer lengthscale disturbance known as a `modal oscillation'. In this paper the physical differences between these two mechanisms are illustrated with detailed measurements. Experimental results are also presented which relate the occurrence of the two stalling mechanisms to the operating conditions of the compressor. It is shown that the stability criteria for the two disturbances are different: long lengthscale disturbances are related to a two-dimensional instability of the whole compression system, while short lengthscale disturbances indicate a three-dimensional breakdown of the flow-field associated with high rotor incidence angles. Based on the experimental measurements, a simple model is proposed which explains the type of stall inception pattern observed in a particular compressor. Measurements from a single stage low-speed compressor and from a multistage high-speed compressor are presented in support of the model.

Design and optimization of a 250nm SOI LDMOSFET

This work is aimed at optimising the static performance of a high voltage SOI LDMOSFET. Starting with a conventional LDMOSFET, 2D and 3D numerical simulation models, able to accurately match datasheet values, have been developed. Moving from the original device, several design techniques have been investigated with the target of improving the breakdown voltage and the ON-state resistance. The considered design techniques are based on the modification of the doping profile of the drift region and the Superjunction design technique. The paper shows that a single step doping within the drift region is the best design choice for the considered device and is found to give a 24% improvement in the breakdown voltage and a 17% reduction of the ON-state resistance. © 2011 IEEE.

Low on-resistance SOI dual-trench-gate MOSFET

A low specific on-resistance (R-{{\rm on}, {\rm sp}}) integrable silicon-on-insulator (SOI) MOSFET is proposed, and its mechanism is investigated by simulation. The SOI MOSFET features double trenches and dual gates (DTDG SOI): an oxide trench in the drift region, a buried gate inset in the oxide trench, and another trench gate (TG) extended to a buried oxide layer. First, the dual gates form dual conduction channels, and the extended gate widens the vertical conduction area; both of which sharply reduce R-{{\rm on}, {\rm sp}}. Second, the oxide trench folds the drift region in the vertical direction, resulting in a reduced device pitch and R-{{\rm on}, {\rm sp}}. Third, the oxide trench causes multidirectional depletion. This not only enhances the reduced surface field effect and thus reshapes the electric field distribution but also increases the drift doping concentration, leading to a reduced R-{{\rm on}, {\rm sp}} and an improved breakdown voltage (BV). Compared with a conventional SOI lateral Double-diffused metal oxide semiconductor (LDMOS), the DTDG MOSFET increases BV from 39 to 92 V at the same cell pitch or decreases R-{{\rm on}, { \rm sp}} by 77% at the same BV by simulation. Finally, the TG extended synchronously acts as an isolation trench between the high/low-voltage regions in a high-voltage integrated circuit, saving the chip area and simplifying the isolation process. © 2006 IEEE.

A fast 600-V Tandem PiN Schottky (TPS) rectifier with ultra-low on-state voltage

The Tandem PiN Schottky (TPS) rectifier features lowly-doped p-layers in both active and termination regions, and is applied in 600-V rating for the first time. In the active region, the Schottky contact is in series connection with a transparent p-layer, leading to a superior forward performance than the conventional diodes. In addition, due to the benefit of moderate hole injection from the p-layer, the TPS offers a better trade-off between the on-state voltage and the switching speed. The active p-layer also helps to stabilise the Schottky contact, and hence the electrical data distributions are more concentrated. Regarding the floating p-layer in the termination region, its purpose is to reduce the peak electric fields, and the TPS demonstrates a high breakdown voltage with a compact termination width, less than 70% of the state-of-the-art devices on the market. Experimental results have shown that the 600-V TPS rectifier has an ultra-low on-state voltage of 0.98 V at 250 A/cm 2, a fast turn-off time of 75 ns by the standard RG1 test (I F=0.5A, I R=1A, and I RR=0.25A) and a breakdown voltage over 720 V. It is noteworthy that the p-layers in the active and termination regions can be formed at no extra cost for the use of self-alignment process. © 2012 IEEE.

Point injection in trench insulated gate bipolar transistor for ultra low losses

In this paper we propose novel designs that enhance the plasma concentration across the Field Stop IGBT. The "p-ring" and the "point-injection" type devices exhibit increased cathode side conductivity modulation which results in impressive IGBT performance improvement. These designs are shown to be extremely effective in lowering the on-state losses without compromising the switching performance or the breakdown rating. For the same switching losses we can achieve more than 20% reduction of the on state energy losses compared to the conventional FS IGBT. © 2012 IEEE.

200-V lateral superjunction LIGBT on partial SOI

This letter presents a novel lateral superjunction lateral insulated-gate bipolar transistor (LIGBT) in partial silicon-on-insulator (SOI) technology in 0.18-μm partial-SOI (PSOI) high-voltage (HV) process. For an n-type superjunction LIGBT, the p-layer in the superjunction drift region not only helps in achieving uniform electric field distribution but also contributes to the on-state current. The superjunction LIGBT successfully achieves a breakdown voltage (BV) of 210 V with an R dson of 765 mΩ ̇ mm 2. It exhibits half the value of specific on-state resistance R dson and three times higher saturation current (I dsat) for the same BV, compared to a comparable lateral superjunction laterally diffused metal-oxide-semiconductor fabricated in the same technology. It also performs well in higher temperature dc operation with 38.8% increase in R dson at 175°C, compared to the room temperature without any degradation in latch-up performance. To realize this device, it only requires one additional mask layer into X-FAB 0.18-μm PSOI HV process. © 2012 IEEE.

The nature and origin of deep ocean clay crust from the Gulf of Guinea

Deep ocean sediments off the west coast of Africa exhibit a peculiar undrained strength profile in the form of a crust, albeit of exceptionally high water content, overlying normally consolidated clay. Hot-oil pipelines are installed into these crustal sediments, so their origins and characteristics are of great interest to pipeline designers. This paper provides evidence for the presence of burrowing invertebrates in crust material, and for the way sediment properties are modified through their creation of burrows, and through the deposition of faecal pellets. A variety of imaging techniques are used to make these connections, including photography, scanning electron microscopy and X-ray computer tomography. However, the essential investigative technology is simply the wet-sieving of natural cores, which reveals that up to 60% by dry mass of the crustal material can consist of smooth, highly regular, sand-sized capsules that have been identified as the faecal pellets of invertebrates such as polychaetes. Mechanical tests reveal that these pellets are quite robust under effective stresses of the order of 10 kPa, acting like sand grains within a matrix of fines. Their abundance correlates closely with the measured strength of the crust. While this can easily be accepted in the context of a pellet fraction as high as 60%, the question arises how a smaller proportion of pellets, such as 20%, is apparently able to enhance significantly the strength of a sediment that otherwise appears to be normally consolidated. A hypothesis is suggested based on the composition of the matrix of fines around the pellets. These appear to consist of agglomerates of clay platelets, which may be the result of the breakdown of pellets by other organisms. Their continued degradation at depths in excess of 1 m is taken to explain the progressive loss of crustal strength thereafter.

Comparing crowding in human and ideal observers.

A visual target is more difficult to recognize when it is surrounded by other, similar objects. This breakdown in object recognition is known as crowding. Despite a long history of experimental work, computational models of crowding are still sparse. Specifically, few studies have examined crowding using an ideal-observer approach. Here, we compare crowding in ideal observers with crowding in humans. We derived an ideal-observer model for target identification under conditions of position and identity uncertainty. Simulations showed that this model reproduces the hallmark of crowding, namely a critical spacing that scales with viewing eccentricity. To examine how well the model fits quantitatively to human data, we performed three experiments. In Experiments 1 and 2, we measured observers' perceptual uncertainty about stimulus positions and identities, respectively, for a target in isolation. In Experiment 3, observers identified a target that was flanked by two distractors. We found that about half of the errors in Experiment 3 could be accounted for by the perceptual uncertainty measured in Experiments 1 and 2. The remainder of the errors could be accounted for by assuming that uncertainty (i.e., the width of internal noise distribution) about stimulus positions and identities depends on flanker proximity. Our results provide a mathematical restatement of the crowding problem and support the hypothesis that crowding behavior is a sign of optimality rather than a perceptual defect.

The lateral superjunction PSOI LIGBT and LDMOSFET

This paper presents a comparison between the superjunction LIGBT and the LDMOSFET in partial silicon-on-insulator (PSOI) technology in 0.18μm PSOI HV process. The superjunction drift region helps in achieving uniform electric field distribution in both structures but also contributes to the on-state current in the LIGBT. The superjunction LIGBT successfully achieves breakdown voltage (BV) of 210V with Rdson of 765mΩ.mm2. It exhibits reduced specific on-state resistance Rdson and higher saturation current (Idsat) for the same BV compared to a compatible lateral superjunction LDMOS in the same technology. © 2012 IEEE.

Shroud heat transfer measurements from a rotating cavity with an axial throughflow of air

The paper discusses measurements of heat transfer obtained from the inside surface of the peripheral shroud. The experiments were carried out on a rotating cavity, comprising two 0.985-m-dia disks, separated by an axial gap of 0.065 m and bounded at the circumference by a carbon fiber shroud. Tests were conducted with a heated shroud and either unheated or heated disks. When heated, the disks had the same temperature level and surface temperature distribution. Two different temperature distributions were tested; the surface temperature either increased, or decreased with radius. The effects of disk, shroud, and air temperature levels were also studied. Tests were carried out for the range of axial throughflow rates and speeds: 0.0025 ≤ m ≤ 0.2 kg/s and 12.5 ≤ Ω ≤ 125 rad/s, respectively. Measurements were also made of the temperature of the air inside the cavity. The shroud Nusselt numbers are found to depend on a Grashof number, which is defined using the centripetal acceleration. Providing the correct reference temperature is used, the measured Nusselt numbers also show similarity to those predicted by an established correlation for a horizontal plate in air. The heat transfer from the shroud is only weakly affected by the disk surface temperature distribution and temperature level. The heat transfer from the shroud appears to be affected by the Rossby number. A significant enhancement to the rotationally induced free convection occurs in the regions 2 ≤ Ro ≤ 4 and Ro ≥ 20. The first of these corresponds to a region where vortex breakdown has been observed. In the second region, the Rossby number may be sufficiently large for the central throughflow to affect the shroud heat transfer directly. Heating the shroud does not appear to affect the heat transfer from the disks significantly.

Enzyme-free glucose biosensor based on low density CNT forest grown directly on a Si/SiO2 substrate

A highly sensitive nonenzymatic amperometric glucose sensor was fabricated by using Ni nanoparticles homogeneously dispersed within and on the top of a vertically aligned CNT forest (CNT/Ni nanocomposite sensor), which was directly grown on a Si/SiO2 substrate. The surface morphology and elemental analysis were characterized using scanning electron microscopy and energy dispersive spectroscopy, respectively. Cyclic voltammetry and chronoamperometry were used to evaluate the catalytic activities of CNT/Ni electrode. The CNT/Ni nanocomposite sensor exhibited a great enhancement of anodic peak current after adding 5 mM glucose in alkaline solution. The sensor can also be applied to the quantification of glucose content with a linear range covering from 5 μM to 7 mM, a high sensitivity of 1433 μA mM-1 cm-2, and a low detection limit of 2 μM. The CNT/Ni nanocomposite sensor exhibits good reproducibility and long-term stability, moreover, it was also relatively insensitive to commonly interfering species, such as uric acid, ascorbic acid, acetaminophen, sucrose and d-fructose. © 2013 Elsevier B.V.

High-density remote plasma sputtering of high-dielectric-constant amorphous hafnium oxide films

Hafnium oxide (HfOx) is a high dielectric constant (k) oxide which has been identified as being suitable for use as the gate dielectric in thin film transistors (TFTs). Amorphous materials are preferred for a gate dielectric, but it has been an ongoing challenge to produce amorphous HfOx while maintaining a high dielectric constant. A technique called high target utilization sputtering (HiTUS) is demonstrated to be capable of depositing high-k amorphous HfOx thin films at room temperature. The plasma is generated in a remote chamber, allowing higher rate deposition of films with minimal ion damage. Compared to a conventional sputtering system, the HiTUS technique allows finer control of the thin film microstructure. Using a conventional reactive rf magnetron sputtering technique, monoclinic nanocrystalline HfOx thin films have been deposited at a rate of ∼1.6nmmin-1 at room temperature, with a resistivity of 1013Ωcm, a breakdown strength of 3.5MVcm-1 and a dielectric constant of ∼18.2. By comparison, using the HiTUS process, amorphous HfOx (x=2.1) thin films which appear to have a cubic-like short-range order have been deposited at a high deposition rate of ∼25nmmin-1 with a high resistivity of 1014Ωcm, a breakdown strength of 3MVcm-1 and a high dielectric constant of ∼30. Two key conditions must be satisfied in the HiTUS system for high-k HfOx to be produced. Firstly, the correct oxygen flow rate is required for a given sputtering rate from the metallic target. Secondly, there must be an absence of energetic oxygen ion bombardment to maintain an amorphous microstructure and a high flux of medium energy species emitted from the metallic sputtering target to induce a cubic-like short range order. This HfOx is very attractive as a dielectric material for large-area electronic applications on flexible substrates. A remote plasma sputtering process (high target utilization sputtering, HiTUS) has been used to deposit amorphous hafnium oxide with a very high dielectric constant (∼30). X-ray diffraction shows that this material has a microstructure in which the atoms have a cubic-like short-range order, whereas radio frequency (rf) magnetron sputtering produced a monoclinic polycrystalline microstructure. This is correlated to the difference in the energetics of remote plasma and rf magnetron sputtering processes. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Design and optimization of planar mesa termination for diamond Schottky barrier diodes

In this paper, we present planar mesa termination structure with high k dielectric Al2O3 for high-voltage diamond Schottky barrier diode. Analysis, design, and optimization are carried out by simulations using finite element technology computer-aided design (TCAD) Sentaurus Device software. The performances of planar mesa termination structure are compared to those of conventional field plate termination structure. It is found that optimum geometry of planar mesa terminated diode requires shorter metal plate extension (1/3 of the field plate terminated diode). Consequently, planar mesa terminated diode can be designed with bigger Schottky contact to increase its current carrying capability. Breakdown performance of field plate termination structure is limited at 1480 V due to peak electric field at the corner of Schottky contact (no oxide breakdown occurs). In contrast, peak electric field in planar mesa termination structure only occurs in the field oxide such that its breakdown performance is highly dependent on the oxide material. Due to Al2O3 breakdown, planar mesa termination structure suffers premature breakdown at 1440 V. Considering no oxide breakdown occurs, planar mesa termination structure can realize higher breakdown voltage of 1751 V. Therefore, to fully realize the potential of planar mesa terminated diode, it is important to choose suitable high k dielectric material with sufficient breakdown electric field for the field oxide. © 2013 Elsevier B.V.

Relating monolithic and granular leaching from contaminated soil treated with different cementitious binders.

This work employed a clayey, silty, sandy gravel contaminated with a mixture of metals (Cd, Cu, Pb, Ni and Zn) and diesel. The contaminated soil was treated with 5 and 10% dosages of different cementitious binders. The binders include Portland cement, cement-fly ash, cement-slag and lime-slag mixtures. Monolithic leaching from the treated soils was evaluated over a 64-day period alongside granular leachability of 49- and 84-day old samples. Surface wash-off was the predominant leaching mechanism for monolithic samples. In this condition, with data from different binders and curing ages combined, granular leachability as a function of monolithic leaching generally followed degrees 4 and 6 polynomial functions. The only exception was for Cu, which followed the multistage dose-response model. The relationship between both leaching tests varied with the type of metal, curing age/residence time of monolithic samples in the leachant, and binder formulation. The results provide useful design information on the relationship between leachability of metals from monolithic forms of S/S treated soils and the ultimate leachability in the eventual breakdown of the stabilized/solidified soil.

Scaling of transitionally-rough flow structures in DNSes of channels with riblets up to Reτ=550

The linear, drag-reducing effect of vanishingly small riblets breaks down once their size is in the transitionally-rough regime. We have previously reported that this breakdown is caused by the additional Reynolds stresses produced by the appearance of elongated spanwise rollers just above the riblet surface. These rollers are related with the Kelvin--Helmholtz instability of free shear layers, and to similar structures appearing over other rough and porous surfaces. However, because of the limited Reτ=180 in our previous DNSes, it could not be determined whether those structures scaled in inner or outer units. Furthermore, it is questionable if results in the transitionally-rough regime at Reτ=180 can be extrapolated to configurations of practical interest. At such small Reynolds numbers, roughness of transitional size can perturb a large portion of the boundary layer, which is not the case in most industrial and atmospheric applications. To clarify these issues we have conducted a set of DNSes at Reτ=550. Our results indicate that the spanwise rollers scale in wall units, and support the validity of the extrapolation to configurations of practical interest.