441 resultados para semiconductor lasers


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Quantum-dot active material systems are proving to be an excellent choice for mode-locked laser applications. High-power, high repetition-rate picosecond and sub-picosecond pulse generation is now readily achievable with promising results for ultra-low jitter performance. © 2006 Optical Society of America.

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We show for the first time that for a given switching pulse width, the maximum switching speed obtainable from a Mach-Zehnder interferometer employing semiconductor optical amplifiers is strongly dependent on the SOA chirp characteristics. © 2005 Optical Society of America.

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Colliding pulse mode-locking is demonstrated for the first time in quantum-dot lasers. Close to transform limited, 7ps, 20GHz pulses are achieved using an absorber length considerably longer than typically used in similar quantum-well lasers. © 2004 Optical Society of America.

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We show for the first time that for a given switching pulse width, the maximum switching speed obtainable from a Mach-Zehnder interferometer employing semiconductor optical amplifiers is strongly dependent on the SOA chirp characteristics. © 2005 Optical Society of America.

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In the past decade, passively modelocked optically pumped vertical external cavity surface emitting lasers (OPVECSELs), sometimes referred to as semiconductor disk lasers (OP-SDLs), impressively demonstrated the potential for generating femtosecond pulses at multi-Watt average output powers with gigahertz repetition rates. Passive modelocking with a semiconductor saturable absorber mirror (SESAM) is well established and offers many advantages such as a flexible design of the parameters and low non-saturable losses. Recently, graphene has emerged as an attractive wavelength-independent alternative saturable absorber for passive modelocking in various lasers such as fiber or solid-state bulk lasers because of its unique optical properties. Here, we present and discuss the modelocked VECSELs using graphene saturable absorbers. The broadband absorption due to the linear dispersion of the Dirac electrons in graphene makes this absorber interesting for wavelength tunable ultrafast VECSELs. Such widely tunable modelocked sources are in particularly interesting for bio-medical imaging applications. We present a straightforward approach to design the optical properties of single layer graphene saturable absorber mirrors (GSAMs) suitable for passive modelocking of VECSELs. We demonstrate sub-500 fs pulses from a GSAM modelocked VECSEL. The potential for broadband wavelength tuning is confirmed by covering 46 nm in modelocked operation using three different VECSEL chips and up to 21 nm tuning in pulsed operation is achieved with one single gain chip. A linear and nonlinear optical characterization of different GSAMs with different absorption properties is discussed and can be compared to SESAMs. © 2014 SPIE.

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Optically pumped ultrafast vertical external cavity surface emitting lasers (VECSELs), also referred to as semiconductor disk lasers (SDLs), are very attractive sources for ps- and fs-pulses in the near infrared [1]. So far VECSELs have been passively modelocked with semiconductor saturable absorber mirrors (SESAMs, [2]). Graphene has emerged as a promising saturable absorber (SA) for a variety of applications [3-5], since it offers an almost unlimited bandwidth and a fast recovery time [3-5]. A number of different laser types and gain materials have been modelocked with graphene SAs [3-4], including fiber [5] and solid-state bulk lasers [6-7]. Ultrafast VECSELs are based on a high-Q cavity, which requires very low-loss SAs compared to other lasers (e.g., fiber lasers). Here we develop a single-layer graphene saturable absorber mirror (GSAM) and use it to passively modelock a VECSEL. © 2013 IEEE.