48 resultados para textbooks, proportion, structure and ubderstanding


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Nanostructured carbon thin films have been grown by deposition of cluster beams produced by a supersonic expansion. Due to separation effects typical of supersonic beams, films with different nanostructures can be grown by the simple intercepting of different regions of the cluster beam with a substrate. Films show a low-density porous structure, which has been characterized by Raman and Brillouin spectroscopy. Film morphology suggests that growth processes are similar to those occurring in a ballistic deposition regime.

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Field angle dependent critical current, magneto-optical microscopy and high resolution electron microscopy studies have been performed on YBa2Cu3O7-delta thin films grown on miscut substrates. High resolution electron microscopy images show that the films studied exhibited clean epitaxial growth with a low density of antiphase boundaries and stacking faults. Any antiphase boundaries (APBs) formed near the film substrate interface rapidly healed rather than extending through the thickness of the film. Unlike vicinal films grown on annealed substrates, which contain a high density of antiphase boundaries, magneto-optical imaging showed no filamentary flux penetration in the films studied. The flux penetration is, however, asymmetric. This is associated with intrinsic pinning of flux strings by the tilted a-b planes and the dependence of the pinning force on the angle between the local field and the a-b planes. Field angle dependent critical current measurements exhibited the striking vortex channeling effect previously reported in vicinal films. By combining the results of three complementary characterization techniques it is shown that extended APB free films exhibit markedly different critical current behavior compared to APB rich films. This is attributed to the role of APB sites as strong pinning centers for Josephson string vortices between the a-b planes. (C) 2003 American Institute of Physics.

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The uncertainty associated with a rainfall-runoff and non-point source loading (NPS) model can be attributed to both the parameterization and model structure. An interesting implication of the areal nature of NPS models is the direct relationship between model structure (i.e. sub-watershed size) and sample size for the parameterization of spatial data. The approach of this research is to find structural limitations in scale for the use of the conceptual NPS model, then examine the scales at which suitable stochastic depictions of key parameter sets can be generated. The overlapping regions are optimal (and possibly the only suitable regions) for conducting meaningful stochastic analysis with a given NPS model. Previous work has sought to find optimal scales for deterministic analysis (where, in fact, calibration can be adjusted to compensate for sub-optimal scale selection); however, analysis of stochastic suitability and uncertainty associated with both the conceptual model and the parameter set, as presented here, is novel; as is the strategy of delineating a watershed based on the uncertainty distribution. The results of this paper demonstrate a narrow range of acceptable model structure for stochastic analysis in the chosen NPS model. In the case examined, the uncertainties associated with parameterization and parameter sensitivity are shown to be outweighed in significance by those resulting from structural and conceptual decisions. © 2011 Copyright IAHS Press.

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We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-liquid-solid (VLS) growth mechanism with Au catalysts by metal-organic chemical vapor deposition (MOCVD). By using annealed thin GaAs buffer layers on the surface of Si substrates, most nanowires are grown on the substrates straight, following (111) direction; by using two temperature growth, the nanowires were grown free from structural defects, such as twin defects and stacking faults. Systematic experiments about buffer layers indicate that V/III ratio of precursor and growth temperature can affect the morphology and quality of the buffer layers. Especially, heterostructural buffer layers grown with different V/III ratios and temperatures and in-situ post-annealing step are very helpful to grow well arranged, vertical GaAs nanowires on Si substrates. The initial nanowires having some structural defects can be defect-free by two-temperature growth mode with improved optical property, which shows us positive possibility for optoelectronic device application. ©2010 IEEE.

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The drive for low emission combustion systems encourages applications using premixed flames. Yet in many applications, considerations of flame stability or mixing times lead to systems with neither premixed nor diffusion flames, which are often called technically premixed or stratified flames. In this talk we discuss the current state of understanding of the effect of mixing and extent of stratification on the structure, microstructure and dynamics of selected turbulent stratified flames. Over the past few years, a significant database of scalar and velocity data has been built to analyze the effects of unmixedness on local and global flame structure. Microscale studies of the flame structures show in detail how the effect of local stratification affects (or not!) the flame structure, flame surface density and scalar dissipation rates, and production of selected species. The experiments place exacting demands on current spectroscopic diagnostics, and reveal the progress and limits to our understanding of turbulent flames in general. The dynamics of stratified flames with respect to instabilities is also shown to be very rich, as the particular shape of the flames and the stabilization points are is significantly affected by the fuel distribution, modifying the rate and location of heat release, and thus the coupling with the surrounding acoustics and determining the onset of self-excitations.