Formation of silicon-on-insulator layers by electron beam recrystallization

This paper outlines the development of the electron beam recrystallization approach to the formation of silicon-on-insulator layers. The technique of recrystallizing seeded layers by a line electron beam has been widely adopted. Present practice in electron beam recrystallization is reviewed, both from materials and process points of view. Applications of silicon-on-insulator substrates formed in this way are described, particularly in three-dimensional integration. © 1988.

Experimental and theoretical comparison between static and dynamic torsional soil tests

The dynamic properties of dry Leighton Buzzard sand have been investigated using a resonant column test apparatus. These data are compared with very low frequency cyclic tests on identical specimens of sand. The comparison indicates that the properties of dry sand are independent of frequency. A simple one-dimensional model of kinematic hardening plasticity is used to predict the dynamic behaviour of the sand. The input parameters for this model are based on the results of static tests. These may be conducted on standard laboratory equipment with only minor modifications. The predictions are in good agreement with the measured data.