Partial soi power LDMOS with a variable low-kappa; Dielectric buried layer and a buried P layer

A power LDMOS on partial silicon on insulator (PSOI) with a variable low-κ dielectric (VLKD) buried layer and a buried p (BP) layer is proposed (VLKD BPSOI). At a low κ value, the electric field strength in the buried dielectric (EI) is enhanced, and a Si window makes the substrate share the vertical voltage drop, leading to a high vertical breakdown voltage (BV). Moreover, three interface field peaks are introduced by the BP, the Si window, and the VLKD, which modulate the fields in the SOI layer, the VLKD layer, and the substrate; consequently, a high BV is obtained. Furthermore, the BP reduces the specific on-resistance (Ron), and the Si window alleviates the self-heating effect (SHE). The BV for VLKD BPSOI is enhanced by 34.5%, and Ron is decreased by 26.6%, compared with those for the conventional PSOI, and VLKD BPSOI also maintains a low SHE. © 2006 IEEE.

Sound transmission in strongly-curved slowly-varying cylindrical and annular lined ducts with flow

In this paper we consider the propagation of acoustic waves along a curved hollow or annular duct with lined walls. The curvature of the duct centreline and the wall radii vary slowly along the duct, allowing application of an asymptotic multiple scales analysis. This generalises Rienstra's analysis of a straight duct of varying cross-sectional radius. The result of the analysis is that the modal wavenumbers and mode shapes are determined locally as modes of a torus with the same local curvature, while the amplitude of the modes evolves as the mode propagates along the duct. The duct modes are found numerically at each axial location using a pseudo-spectral method. Unlike the case of a straight duct, there is a fundamental asymmetry between upstream and downstream propagating modes, with some mode shapes tending to be concentrated on either the inside or outside of the bend depending on the direction of propagation. The interaction between the presence of wall lining and curvature is investigated in particular; for instance, in a representative case it is found that the curvature causes the first few acoustic modes to be more heavily damped by the duct boundary than would be expected for a straight duct. Analytical progress can be made in the limit of very high mode order, in which case well-known 'whispering gallery' modes, localised close to the wall, can be identified.

Generation and scattering of sound in vortical flow

We present solutions to scattering problems for unsteady disturbances to a mean swirling flow in an annular duct with a rigid 'splitter'. This situation has application to rotor-stator interaction noise in aeroengines, where the flow downstream of the fan is swirling and bifurcates into the by-pass duct and the engine core. We also consider the trailing edge extension of this problem. Inviscid mean flow in a cylindrical annulus is considered, with both axial and swirling (azimuthal) velocity components. The presence of vorticity in the mean flow couples the acoustic and vorticity modes of irrotational flow. Instead we have one combined spectrum of acoustic-vorticity waves in which the 'sonic' and 'nearly-convected' modes are fully coupled. In addition to the aeroacoustics application the results offer insight into the behaviour of these acoustic-vorticity waves, and the precise nature of the coupling between the two types of mode. Two regimes are discussed in which progress has been made, one for a specialised mean flow, uniform axial flow and rigid body swirl, and a second regime in which the frequency is assumed large, valid for any axisymmetric mean flow. The Wiener-Hopf technique is used to solve the scattering problems mathematically, and we present numerical evaluations of these solutions. Several new effects are seen to arise due to the mean vorticity, in particular the generation of sound at a trailing edge due to the scattering of a nearly convected disturbance, in contrast to the way a convected gust silently passes a trailing edge in uniform mean flow.

Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical vapour deposition technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures at a temperature of 350 °C. The as-deposited films are then furnace annealed at 600 °C which is the maximum process temperature. Raman analysis shows the as-deposited and annealed films to be completely amorphous. The most important deposition variable is the N2O SiH4 gas ratio. By varying the N2O SiH4 ratio the conductivity of the annealed films can be accurately controlled, for the first time, down to a minimum of ≈10-7Ω-1cm-1 where they exhibit a T -1 4 temperature dependence indicative of a hopping conduction mechanism. Helium dilution of the reactant gases is shown to improve both film uniformity and reproducibility. A model for the microstructure of these semi-insulating amorphous oxygen-doped silicon films is proposed to explain the observed physical and electrical properties. © 1995.

Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications

This work describes the annealing and characterisation of semi-insulating oxygen-doped silicon films deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The maximum process temperature is chosen to be compatible with large area polycrystalline silicon (poly-Si) circuitry on glass. The most important deposition variable is shown to be the N2O SiH4 gas ratio. Helium dilution results in improved film uniformity and reproducibility. Raman analysis shows the 'as-deposited' and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties. © 1995.

High peak power femtosecond pulse VECSELs for terahertz time domain spectroscopy

We report on a high peak power femtosecond modelocked VECSEL and its application as a drive laser for an all semiconductor terahertz time domain spectrometer. The VECSEL produced near-transform-limited 335 fs sech2 pulses at a fundamental repetition rate of 1 GHz, a centre wavelength of 999 nm and an average output power of 120 mW. We report on the effect that this high peak power and short pulse duration has on our generated THz signal.