Optical learning in a smart spatial light modulator

A synaptic plane rendered by an array of smart pixels was described regarding its application as a complementary component for neural network implementation. The smart spatial light modulator featured auto-modification abilities. Thus, an optical system incorporating this device can show self-reliant optical learning. Furthermore, the optical system design, in the area of its optical interconnection scheme, is highly flexible since the independent weight-plane pixels eliminated the difficulty between weight update calculation and weight representation.

Smart chemical sensor application of ZnO nanowires grown on CMOS compatible SOI microheater platform

Smart chemical sensor based on CMOS(complementary metal-oxide- semiconductor) compatible SOI(silicon on insulator) microheater platform was realized by facilitating ZnO nanowires growth on the small membrane at the relatively low temperature. Our SOI microheater platform can be operated at the very low power consumption with novel metal oxide sensing materials, like ZnO or SnO2 nanostructured materials which demand relatively high sensing temperature. In addition, our sol-gel growth method of ZnO nanowires on the SOI membrane was found to be very effective compared with ink-jetting or CVD growth techniques. These combined techniques give us the possibility of smart chemical sensor technology easily merged into the conventional semiconductor IC application. The physical properties of ZnO nanowire network grown by the solution-based method and its chemical sensing property also were reported in this paper.

700V smart trench IGBT with monolithic over-voltage and over-current protecting functions

An advanced 700V Smart Trench IGBT with monolithically integrated over-voltage and over-current protecting circuits is presented in this paper. The proposed Smart IGBT comprises a sense IGBT, a low voltage lateral n-channel MOSFET (M 1), an avalanche diode (D av), and poly-crystalline Zener diodes (ZD) and resistor (R poly). Mix-mode transient simulations with MEDICI have proven the functionalities of the protecting circuits when the device is operating under abnormal conditions, such as Unclamped Inductive Switching (UIS) and Short Circuit (SC) condition. A Trench IGBT process is used to fabricate this device with total 11 masks including one metal mask only. The characterizations of the fabricated device exhibit the clamping capability of the avalanche diode and voltage pull-down ability of the MOSFET. © 2012 IEEE.

Closing the Energy Efficiency Gap: A study linking demographics with barriers to adopting energy efficiency measures in the home

This paper presents a study which linked demographic variables with barriers affecting the adoption of domestic energy efficiency measures in large UK cities. The aim was to better understand the 'Energy Efficiency Gap' and improve the effectiveness of future energy efficiency initiatives. The data for this study was collected from 198 general population interviews (1.5-10 min) carried out across multiple locations in Manchester and Cardiff. The demographic variables were statistically linked to the identified barriers using a modified chi-square test of association (first order Rao-Scott corrected to compensate for multiple response data), and the effect size was estimated with an odds-ratio test. The results revealed that strong associations exist between demographics and barriers, specifically for the following variables: sex; marital status; education level; type of dwelling; number of occupants in household; residence (rent/own); and location (Manchester/Cardiff). The results and recommendations were aimed at city policy makers, local councils, and members of the construction/retrofit industry who are all working to improve the energy efficiency of the domestic built environment. © 2012 Elsevier Ltd.