Analytic model for turn off in the silicon-on-insulator LIGBT

Lateral insulated gate bipolar transistors (LIGBTs) in silicon-on-insulator (SOI) show a unique turn off characteristic when compared to junction-isolated RESURF LIGBTs or vertical IGBTs. The turn off characteristic shows an extended `terrace' where, after the initial fast transient characteristic of IGBTs due to the loss of the electron current, the current stays almost at the same value for an extended period of time, before suddenly dropping to zero. In this paper, we show that this terrace arises because there is a value of LIGBT current during switch off where the rate of expansion of the depletion region with respect to the anode current is infinite. Once this level of anode current is approached, the depletion region starts to expand very rapidly, and is only stopped when it reaches the n-type buffer layer surrounding the anode. Once this happens, the current rapidly drops to zero. A quasi-static analytic model is derived to explain this behaviour. The analytically modelled turn off characteristic agrees well with that found by numerical simulation.

Compressor wake/leading-edge interactions at off design incidences

In this paper, the effects of wake/leading-edge interactions were studied at off-design conditions. Measurements were performed on the stator-blade suction surface at midspan. The leading-edge flow-field was investigated using hotwire micro-traverses, hotfilm surface shear-stress sensors and pressure micro-tappings. The trailing-edge flow-field was investigated using hotwire boundary-layer traverses. Unsteady CFD calculations were also performed to aid the interpretation of the results. At low flow coefficients, the time-averaged momentum thickness of the leading-edge boundary layer was found to rise as the flow coefficient was reduced. The time-resolved momentum-thickness rose due to the interaction of the incoming rotor wake. As the flow coefficient was reduced, the incoming wakes increased in pitch-wise extent, velocity deficit and turbulence intensity. This increased both the time-resolved rise in the momentum thickness and the turbulent spot production within the wake affected boundary-layer. Close to stall, a drop in the leading-edge momentum thickness was observed in-between wake events. This was associated with the formation of a leading-edge separation bubble in-between wake events. The wake interaction with the bubble gave rise to a shedding phenomenon, which produced large length scale disturbances in the surface shear stress. Copyright © 2008 by ASME.

Angle-of-attack effects on counter-rotating propellers at take-off

Due to their potential for significant fuel consumption savings, Counter-Rotating Open Rotors (CRORs) are currently being considered as an alternative to high-bypass turbofans. When CRORs are mounted on an aircraft, several 'installation effects' arise which are not present when the engine is operated in isolation. This paper investigates how flow features arising from one such effect - The angle-of-attack of the engine centre-line relative to the oncoming flow - can influence the design of CROR engines. Three-dimensional full-annulus unsteady CFD simulations are used to predict the time-varying flow field experienced by each rotor and emphasis is put on the interaction of the frontrotor wake and tip vortex with the rear-rotor. A parametric study is presented that quantifies the rotorrotor interaction as a function of the angle-of-attack. It is shown that angle-of-attack operation significantly changes the flow field and the unsteady lift on both rotors. In particular, a frequency analysis shows that the unsteady lift exhibits sidebands around the rotor-rotor interaction frequencies. Further, a non-linear increase in the total rear-rotor tip unsteadiness is observed for moderate and high angles-of-attack. The results presented in this paper demonstrate that common techniques used to mitigate CROR noise, such as modifying the rotor-rotor axial spacing and rear-rotor crop, can not be applied correctly unless angle-of-attack effects are taken into account. Copyright © 2012 by ASME.

The effect of incomplete ionization on the turn-off behavior of FS IGBTs

This letter demonstrates for the first time the effect of the incomplete ionization (I.I.) of the transparent p-anode layer on the static and dynamic characteristics of the field-stop insulated gate bipolar transistors (FS IGBTs). This effect needs to be considered in FS IGBTs TCAD modeling to match accurately the device characteristics across a wide range of temperatures. The acceptor ionization energy (EA) governing the I.I. mechanism for the p-anode is extracted via matching the experimental turn-off waveforms and the static performance with Medici simulator. © 1980-2012 IEEE.