Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300-1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enhance the electrically driven emission in a device via Purcell effect. A narrow (Δλ=0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Light generation in silicon photonic crystal cavities

Far-field optimized photonic crystal nanocavities are used to strongly increase light generation from crystalline silicon. Low-power continuous-wave harmonic generation as well as efficient room temperature light-emission from optically-active defects are demonstrated in these devices. © 2011 IEEE.

Nonlinear optics in Silicon photonic crystal cavities

Silicon is known to be a very good material for the realization of high-Q, low-volume photonic cavities, but at the same it is usually considered as a poor material for nonlinear optical functionalities like second-harmonic generation, because its second-order nonlinear susceptibility vanishes in the dipole approximation. In this work we demonstrate that nonlinear optical effects in silicon nanocavities can be strongly enhanced and even become macroscopically observable. We employ photonic crystal nanocavities in silicon membranes that are optimized simultaneously for high quality factor and efficient coupling to an incoming beam in the far field. Using a low-power, continuous-wave laser at telecommunication wavelengths as a pump beam, we demonstrate simultaneous generation of second- and third harmonics in the visible region, which can be observed with a simple camera. The results are in good agreement with a theoretical model that treats third-harmonic generation as a bulk effect in the cavity region, and second-harmonic generation as a surface effect arising from the vertical hole sidewalls. Optical bistability is also observed in the silicon nanocavities and its physical mechanisms (optical, due to two-photon generation of free carriers, as well as thermal) are investigated. © 2011 IEEE.

A temperature sensor from a self-assembled carbon nanotube microbridge

Recent studies show that carbon nanotubes (CNTs) can be used as temperature sensors, and offer great opportunities towards extreme miniaturization, high sensitivity, low power consumption, and rapid response. Previous CNT based temperature sensors are fabricated by either dielectrophoresis or piece-wise alignment of read-out electronics around randomly dispersed CNTs. We introduce a new deterministic and parallel microsensor fabrication method based on the self-assembly of CNTs into three-dimensional microbridges. We fabricated prototype microbridge sensors on patterned electrodes, and found their sensitivity to be better than -0.1 %/K at temperatures between 300K and 420K. This performance is comparable to previously published CNT based temperature sensors. Importantly, however, our research shows how unique sensor architectures can be made by self-assembly, which can be achieved using batch processing rather than piecewise assembly. ©2010 IEEE.

Hybrid microstrip and carbon nanotubes based patch antenna for wireless applications

In this we have looked at the concept of introducing carbon nanotubes on the surfaces of the microstrip patch antennas. We examined the performance improvements in a patch antenna through finite difference time domain simulations to increase the efficiency of the antenna. The results suggest that carbon nanotubes lead to a higher gain due to their electrical properties. A high gain antenna with low power requirements resulted in achieving a higher overall bandwidth. The designed antenna's gain, bandwidth and directivity are analyzed before and after introducing carbon nanotubes. © 2013 IEEE.

Thermo-optical characterization of fluorescent rhodamine B based temperature-sensitive nanosensors using a CMOS MEMS micro-hotplate

A custom designed microelectromechanical systems (MEMS) micro-hotplate, capable of operating at high temperatures (up to 700 C), was used to thermo-optically characterize fluorescent temperature-sensitive nanosensors. The nanosensors, 550 nm in diameter, are composed of temperature-sensitive rhodamine B (RhB) fluorophore which was conjugated to an inert silica sol-gel matrix. Temperature-sensitive nanosensors were dispersed and dried across the surface of the MEMS micro-hotplate, which was mounted in the slide holder of a fluorescence confocal microscope. Through electrical control of the MEMS micro-hotplate, temperature induced changes in fluorescence intensity of the nanosensors was measured over a wide temperature range. The fluorescence response of all nanosensors dispersed across the surface of the MEMS device was found to decrease in an exponential manner by 94%, when the temperature was increased from 25 C to 145 C. The fluorescence response of all dispersed nanosensors across the whole surface of the MEMS device and individual nanosensors, using line profile analysis, were not statistically different (p < 0.05). The MEMS device used for this study could prove to be a reliable, low cost, low power and high temperature micro-hotplate for the thermo-optical characterisation of sub-micron sized particles. The temperature-sensitive nanosensors could find potential application in the measurement of temperature in biological and micro-electrical systems. The Authors. © 2013 Published by Elsevier B.V. All rights reserved.

Graphene SOI CMOS sensors for detection of PPB levels of NO2 in air

There is considerable demand for sensors that are capable of detecting ultra-low concentrations (sub-PPM) of toxic gases in air. Of particular interest are NO2 and CO that are exhaust products of internal combustion engines. Electrochemical (EC) sensors are widely used to detect these gases and offer the advantages of low power, good selectivity and temporal stability. However, EC sensors are large (1 cm3), hand-made and thus expensive ($25). Consequently, they are unsuitable for the low-cost automotive market that demands units for less than $10. One alternative technology is SnO2 or WO3 resistive gas sensors that are fabricated in volume today using screen-printed films on alumina substrates and operate at 400°C. Unfortunately, they suffer from several disadvantages: power consumption is high 200 mW; reproducibility of the sensing element is poor; and cross-sensitivity is high. © 2013 IEEE.

Nanoscale light-matter interactions in atomic cladding waveguides.

Alkali vapours, such as rubidium, are being used extensively in several important fields of research such as slow and stored light nonlinear optics quantum computation, atomic clocks and magnetometers. Recently, there is a growing effort towards miniaturizing traditional centimetre-size vapour cells. Owing to the significant reduction in device dimensions, light-matter interactions are greatly enhanced, enabling new functionalities due to the low power threshold needed for nonlinear interactions. Here, taking advantage of the mature platform of silicon photonics, we construct an efficient and flexible platform for tailored light-vapour interactions on a chip. Specifically, we demonstrate light-matter interactions in an atomic cladding waveguide, consisting of a silicon nitride nano-waveguide core with a rubidium vapour cladding. We observe the efficient interaction of the electromagnetic guided mode with the rubidium cladding and show that due to the high confinement of the optical mode, the rubidium absorption saturates at powers in the nanowatt regime.

Two-photon absorption in an atomic cladding wave guide

We experimentally demonstrate two-photon Doppler free interactions on a chip-scale platform consisting of a silicon nitride waveguide integrated with rubidium vapor cladding. We obtain absorption lines having widths of 300 MHz, using low power levels. © OSA 2013.

Two-photon absorption in an atomic cladding wave guide

We experimentally demonstrate two-photon Doppler free interactions on a chip-scale platform consisting of a silicon nitride waveguide integrated with rubidium vapor cladding. We obtain absorption lines having widths of 300 MHz, using low power levels. © OSA 2013.

A parametrically excited vibration energy harvester

In the arena of vibration energy harvesting, the key technical challenges continue to be low power density and narrow operational frequency bandwidth. While the convention has relied upon the activation of the fundamental mode of resonance through direct excitation, this article explores a new paradigm through the employment of parametric resonance. Unlike the former, oscillatory amplitude growth is not limited due to linear damping. Therefore, the power output can potentially build up to higher levels. Additionally, it is the onset of non-linearity that eventually limits parametric resonance; hence, this approach can also potentially broaden the operating frequency range. Theoretical prediction and numerical modelling have suggested an order higher in oscillatory amplitude growth. An experimental macro-sized electromagnetic prototype (practical volume of ∼1800 cm3) when driven into parametric resonance, has demonstrated around 50% increase in half power band and an order of magnitude higher peak power density normalised against input acceleration squared (293 μW cm-3 m-2 s4 with 171.5 mW at 0.57 m s-2) in contrast to the same prototype directly driven at fundamental resonance (36.5 μW cm-3 m-2 s4 with 27.75 mW at 0.65 m s-2). This figure suggests promising potentials while comparing with current state-of-the-art macro-sized counterparts, such as Perpetuum's PMG-17 (119 μW cm-3 m-2 s4). © The Author(s) 2013.

Partial soi power LDMOS with a variable low-kappa; Dielectric buried layer and a buried P layer

A power LDMOS on partial silicon on insulator (PSOI) with a variable low-κ dielectric (VLKD) buried layer and a buried p (BP) layer is proposed (VLKD BPSOI). At a low κ value, the electric field strength in the buried dielectric (EI) is enhanced, and a Si window makes the substrate share the vertical voltage drop, leading to a high vertical breakdown voltage (BV). Moreover, three interface field peaks are introduced by the BP, the Si window, and the VLKD, which modulate the fields in the SOI layer, the VLKD layer, and the substrate; consequently, a high BV is obtained. Furthermore, the BP reduces the specific on-resistance (Ron), and the Si window alleviates the self-heating effect (SHE). The BV for VLKD BPSOI is enhanced by 34.5%, and Ron is decreased by 26.6%, compared with those for the conventional PSOI, and VLKD BPSOI also maintains a low SHE. © 2006 IEEE.

Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical vapour deposition technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures at a temperature of 350 °C. The as-deposited films are then furnace annealed at 600 °C which is the maximum process temperature. Raman analysis shows the as-deposited and annealed films to be completely amorphous. The most important deposition variable is the N2O SiH4 gas ratio. By varying the N2O SiH4 ratio the conductivity of the annealed films can be accurately controlled, for the first time, down to a minimum of ≈10-7Ω-1cm-1 where they exhibit a T -1 4 temperature dependence indicative of a hopping conduction mechanism. Helium dilution of the reactant gases is shown to improve both film uniformity and reproducibility. A model for the microstructure of these semi-insulating amorphous oxygen-doped silicon films is proposed to explain the observed physical and electrical properties. © 1995.

Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications

This work describes the annealing and characterisation of semi-insulating oxygen-doped silicon films deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The maximum process temperature is chosen to be compatible with large area polycrystalline silicon (poly-Si) circuitry on glass. The most important deposition variable is shown to be the N2O SiH4 gas ratio. Helium dilution results in improved film uniformity and reproducibility. Raman analysis shows the 'as-deposited' and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties. © 1995.