Advanced DC link capacitor technology application for a stiff voltage-source inverter

Problem of DC link size in a stiff voltage-source inverter for electric drive is described in the paper. Advantages of advanced film capacitor technology over conventional one for DC link application are reviewed. Conventional DC link capacitor selection methods are questioned in view of advanced capacitor technology utilization in stiff voltage-source inverter. For capacitor selection maximum ripple rms current point is shown. DC link ripple current spectrum analysis under modern PWM techniques is presented. Some capacitor selection recommendations are given. The analysis has been aided greatly by computer modeling in PSpice. ©2005 IEEE.

The Ic behavior of 2G YBCO tapes under DC/AC magnetic fields at various temperatures

In order to design a High Temperature Superconducting (HTS) machine that is able to operate safely and reliably, studies on the characterization of Second Generation (2G) HTS tapes are of paramount importance. This paper presents an experimental setup to measure critical current of 2G HTS tapes in high DC magnetic fields (up to 5 Tesla) with an AC current ripple superimposed, as well as various temperatures ranging from 25 K to 77 K. The 2G tape measured is the SGS12050 coated conductor made by SuperPower. The critical current is measured by a flux vector with reference to the widest sample face from 0 to 90 degrees in 10 degree steps. Smaller steps are required close to 0 . A Variable Temperature Insert (VTI) is utilized to control temperature change. © 2010 IEEE.

A 4 GHz non-resonant clock driver with inductor-assisted energy return to power grid

Power consumption of a multi-GHz local clock driver is reduced by returning energy stored in the clock-tree load capacitance back to the on-chip power-distribution grid. We call this type of return energy recycling. To achieve a nearly square clock waveform, the energy is transferred in a non-resonant way using an on-chip inductor in a configuration resembling a full-bridge DC-DC converter. A zero-voltage switching technique is implemented in the clock driver to reduce dynamic power loss associated with the high switching frequencies. A prototype implemented in 90 nm CMOS shows a power savings of 35% at 4 GHz. The area needed for the inductor in this new clock driver is about 6% of a local clock region. © 2006 IEEE.

A 660MHz ZVS DC-DC converter using gate-driver charge-recycling in 0.18μm CMOS with an integrated output filter

The design and manufacture of a prototype chip level power supply is described, with both simulated and experimental results. Of particular interest is the inclusion of a fully integrated on-chip LC filter. A high switching frequency of 660MHz and the design of a device drive circuit reduce losses by supply stacking, low-swing signaling and charge recycling. The paper demonstrates that a chip level converter operating at high frequency can be built and shows how this can be achieved, using zero voltage switching techniques similar to those commonly used in larger converters. Both simulations and experimental data from a fabricated circuit in 0.18μm CMOS are included. The circuit converts 2.2V to 0.75∼1.0V at ∼55mA. ©2008 IEEE.

Energy recycling from multigigahertz clocks using fully integrated switching converters

Large digital chips use a significant amount of energy to broadcast a low-skew, multigigahertz clock to millions of latches located throughout the chip. Every clock cycle, the large aggregate capacitance of the clock network is charged from the supply and then discharged to ground. Instead of wasting this stored energy, it is possible to recycle the energy by controlling its delivery to another part of the chip using an on-chip dc-dc converter. The clock driver and switching converter circuits share many compatible characteristics that allow them to be merged into a single design and fully integrated on-chip. Our buck converter prototype, manufactured in 90-nm CMOS, provides a proof-of-concept that clock network energy can be recycled to other parts of the chip, thus lowering overall energy consumption. It also confirms that monolithic multigigahertz switching converters utilizing zero-voltage switching can be implemented in deep-submicrometer CMOS. With multigigahertz operation, fully integrated inductors and capacitors use a small amount of chip area with low losses. Combining the clock driver with the power converter can share the large MOSFET drivers necessary as well as being energy and space efficient. We present an analysis of the losses which we confirm by experimentally comparing the merged circuit with a conventional clock driver. © 2012 IEEE.

Use of 2G coated conductors for efficient shielding of DC magnetic fields

This paper reports the results of an experimental investigation of the performance of two types of magnetic screens assembled from YBa2Cu3O7-d (YBCO) coated conductors. Since effective screening of the axial DC magnetic field requires the unimpeded flow of an azimuthal persistent current, we demonstrate a configuration of a screening shell made out of standard YBCO coated conductor capable to accomplish that. The screen allows the persistent current to flow in the predominantly azimuthal direction at a temperature of 77 K. The persistent screen, incorporating a single layer of superconducting film, can attenuate an external magnetic field of up to 5 mT by more than an order of magnitude. For comparison purposes, another type of screen which incorporates low critical temperature quasi-persistent joints was also built. The shielding technique we describe here appears to be especially promising for the realization of large scale high-Tc superconducting screens.

DC and AC Shielding properties of bulk high-tc

We have studied numerically and experimentally the magnetic flux penetration in high-Tc superconducting tube subjected to a uniform magnetic field parallel to its long axis. This study is carried in view of designing low-frequency magnetic shields by exploiting the diamagnetic properties of high-Tc superconducting ceramics. We have measured the field attenuation for applied magnetic fields in the frequency range 5 mHz-0.1 Hz by Hall probe measurements and at audio frequencies using a sensing coil. A simple 1D analysis using the Kim critical state model was found to be able to reproduce the experimental data satisfactorily. We have also determined the phase shift between the internal and the applied field both experimentally and numerically. Finally, we have studied the sweep rate dependence of the magnetic shielding properties, using data recorded either at several constant sweep rates dB /dt or at several AC fields of various amplitudes and frequencies. Both methods agree with each other and lead to a n-value of the E ∼ Jn law equal to ∼40 at 77 K. © 2009 IEEE.

Use of a high-temperature superconducting coil for magnetic energy storage

A high temperature superconducting magnetic energy storage device (SMES) has been realised using a 350 m-long BSCCO tape wound as a pancake coil. The coil is mounted on a cryocooler allowing temperatures down to 17.2 K to be achieved. The temperature dependence of coil electrical resistance R(T) shows a superconducting transition at T 102.5 K. Measurements of the V(I) characteristics were performed at several temperatures between 17.2 K and 101.5 K to obtain the temperature dependence of the critical current (using a 1 νV/cm criterion). Critical currents were found to exceed 100 A for T < 30 K. An electronic DC-DC converter was built in order to control the energy flow in and out of the superconducting coil. The converter consists of a MOS transistor bridge switching at a 80 kHz frequency and controlled with standard Pulse Width Modulation (PWM) techniques. The system was tested using a 30 V squared wave power supply as bridge input voltage. The coil current, the bridge input and output voltages were recorded simultaneously. Using a 10 A setpoint current in the superconducting coil, the whole system (coil + DC-DC converter) can provide a stable output voltage showing uninterruptible power supply (UPS) capabilities over 1 s. © 2006 IOP Publishing Ltd.

DC current rectification using indium-gallium zinc oxide-based selfswitching diodes

Self-switching diodes have been fabricated within a single layer of indium-gallium zinc oxide (IGZO). Current-voltage (I-V) measurements show the nanometer-scale asymmetric device gave a diode-like response. Full current rectification was achieved using very narrow channel widths of 50nm, with a turn-on voltage, Von, of 2.2V. The device did not breakdown within the -10V bias range measured. This single diode produced a current of 0.1μA at 10V and a reverse current of less than 0.1nA at -10V. Also by adjusting the channel width for these devices, Von could be altered; however, the effectiveness of the rectification also changed. © 2013 IEEE.