Bias-dependent recovery time of all-optical resonant nonlinearity in InGaAsP/InGaAsP MQW waveguide

We have investigated a resonant refractive nonlinearity in a semiconductor waveguide by measuring intensity dependent phase shifts and bias-dependent recovery times. The measurements were performed on an optimized 750-μm-long AR coated buried heterostructure MQW p-i-n waveguide with a bandedge at 1.48 μm. Figure 1 shows the experimental arrangement. The mode-locked color center laser was tuned to 50 meV beyond the bandedge and 8 ps pulses with peak incident power up to 57 W were coupled into the waveguide. Some residual bandtail absorption remains at this wavelength and this is sufficient to cause carriers to be photogenerated and these give rise to a refractive nonlinearity, predominantly by plasma and bandfilling effects. A Fabry-Perot interferometer is used to measure the spectrum of the light which exits the waveguide. The nonlinearity within the guide causes self phase modulation (SPM) of the light and a study of the spectrum allows information to be recovered on the magnitude and recovery time of the nonlinear phase shift with a reasonable degree of accuracy. SPM spectra were recorded for a variety of pulse energies coupled into he unbiased waveguide. Figure 2 shows the resultant phase shift measured from the SPM spectra as a function of pulse energy. The relationship is a linear one, indicating that no saturation of the nonlinearity occurs for coupled pulse energies up to 230 pJ. A π phase shift, the minimum necessary for an all-optical switch, is obtained for a coupled pulse energy of 57 pJ while the maximum phase shift, 4 π, was measured for 230 pJ. The SPM spectra were highly asymmetric with pulse energy shifted to higher frequencies. Such spectra are characteristic of a slow, negative nonlinearity. This relatively slow speed is expected for the unbiased guide as the recovery time will be of the order of the recombination time of the photogenerated electrons, about 1 ns for InGaAsP material. In order to reduce the recovery time of the nonlinearity, it is necessary to remove the photogenerated carriers from the waveguide by a process other than recombination. One such technique is to apply a reverse bias to the waveguide in order to sweep the carriers out. Figure 3 shows the effect on the recovery time of the nonlinearity of applying reverse bias to the waveguide for 230 pJ coupled power. The recovery time was reduced from one much longer than the length of the pulse, estimated to be about 1 ns, at zero bias to 18 ± 3 ps for a bias voltage greater than -4 V. This compares with a value of 24 ps obtained in a bulk waveguide.

Optical design of liquid crystal lenses: Off-axis modelling

We report on our work on producing liquid crystal switchable modal lenses and their use in a compound lens system in order to produce variable focus/zoom lenses. We describe work on producing a high power lens, and present theoretical work on off-axis phase modulation in a liquid crystal lens which is important in order to be able to carry out a complete optical design of a liquid crystal lens.

Performance and power dissipation comparisons between 28 Gb/s NRZ, PAM, CAP and optical OFDM systems for data communication applications

Theoretical investigations have been carried out to analyze and compare the link power budget and power dissipation of non-return-to-zero (NRZ), pulse amplitude modulation-4 (PAM-4), carrierless amplitude and phase modulation-16 (CAP-16) and 16-quadrature amplitude modulation-orthogonal frequency division multiplexing (16-QAM-OFDM) systems for data center interconnect scenarios. It is shown that for multimode fiber (MMF) links, NRZ modulation schemes with electronic equalization offer the best link power budget margins with the least power dissipation for short transmission distances up to 200 m; while OOFDM is the only scheme which can support a distance of 300 m albeit with power dissipation as high as 4 times that of NRZ. For short single mode fiber (SMF) links, all the modulation schemes offer similar link power budget margins for fiber lengths up to 15 km, but NRZ and PAM-4 are preferable due to their system simplicity and low power consumption. For lengths of up to 30 km, CAP-16 and OOFDM are required although the schemes consume 2 and 4 times as much power respectively compared to that of NRZ. OOFDM alone allows link operation up to 35 km distances. © 1983-2012 IEEE.

Comparisons between gigabit NRZ, CAP and optical OFDM systems over FEC enhanced POF links using LEDs

Simulations have been performed to compare the link power budget and power dissipation of carrierless amplitude and phase modulation-64 (CAP-64) and 64-quadrature amplitude modulation-orthogonal frequency division multiplexing (64-QAM-OFDM) systems over feedforward error correction (FEC) enhanced plastic optical fibre (POF) links using light emitting diodes (LEDs). It is shown that CAP-64 outperforms 64-QAM-OFDM and supports record high 2.1Gb/s over 50m POF transmission. The CAP-64 and 64-QAM-OFDM links consume similar powers which are 2 (2.5) times of that of NRZ for the single POF link (twin POF links) case. © 2012 IEEE.

Devitrite-based optical diffusers.

Devitrite is a novel material produced by heat treatment of commercial soda-lime-silica glass. It consists of fans of needle-like crystals which can extend up to several millimeters and have interspacings of up to a few hundred nanometers. To date, only the material properties of devitrite have been reported, and there has been a distinct lack of research on using it for optical applications. In this study, we demonstrate that randomly oriented fans of devitrite crystals can act as highly efficient diffusers for visible light. Devitrite crystals produce phase modulation of light because of their relatively high anisotropy. The nanoscale spacings between these needles enable light to be diffused to large scattering angles. Experimentally measured results suggest that light diffusion patterns with beam widths of up to 120° are produced. Since devitrite is an inexpensive material to produce, it has the potential to be used in a variety of commercial applications.

FM mode-locking in monolithic semiconductor lasers

FM mode-locking in monolithic semiconductor lasers is investigated for the first time, using a travelling-wave laser model. The effects of phase modulation depth and non-zero alpha factor on pulse quality and pulse-width are discussed. © 2004 Optical Society of America.

FM mode-locking in monolithic semiconductor lasers

FM mode-locking in monolithic semiconductor lasers is investigated for the first time, using a travelling-wave laser model. The effects of phase modulation depth and non-zero alpha factor on pulse quality and pulse-width are discussed. © 2004 Optical Society of America.

Diode laser pumped, KERR phase-shifting and switching of a diode laser signal in a small area optical fibre

In this paper authors report the first demonstration of a diode laser powered Kerr effect device, consisting of a single birefringent fiber, able to phase-shift and switch an optical signal generated by a second laser diode. They have obtained fast, stable phase-shifting of 90° in a single fiber, at a coupled pump power of only 20 mW. Using this phase shift to induce polarization switching with resultant gating, 25% modulation of the diode laser signal has been observed, with a detection limited-rise time of 10ns.

Direct observation of the structural component of the metal-insulator phase transition and growth habits of epitaxially grown VO2 nanowires.

We have grown epitaxially orientation-controlled monoclinic VO2 nanowires without employing catalysts by a vapor-phase transport process. Electron microscopy results reveal that single crystalline VO2 nanowires having a [100] growth direction grow laterally on the basal c plane and out of the basal r and a planes of sapphire, exhibiting triangular and rectangular cross sections, respectively. In addition, we have directly observed the structural phase transition of single crystalline VO2 nanowires between the monoclinic and tetragonal phases which exhibit insulating and metallic properties, respectively, and clearly analyzed their corresponding relationships using in situ transmission electron microscopy.

Transmission performance of adaptively modulated optical OFDM modems using subcarrier modulation over SMF IMDD links for access and metropolitan area networks.

Detailed investigations are undertaken, for the first time, of the transmission performance of recently proposed novel Adaptively Modulated Optical OFDM (AMOOFDM) modems using Subcarrier Modulation (AMOOFDM-SCM) in single-channel, SMF-based IMDD links without optical amplification and chromatic dispersion compensation. The cross-talk effect induced by beatings among subcarriers of various types is a crucial factor limiting the maximum achievable AMOOFDM-SCM performance. By applying single sideband modulation and/or spectral gapping to AMOOFDM-SCM, three AMOOFDM-SCM designs of varying complexity are proposed, which achieve >60Gb/s signal transmission over 20 km, 40 km and 60 km. Such performances are >1.5 times higher than those supported by conventional AMOOFDM modems.

Phase separation induced by Au catalysts in ternary InGaAs nanowires.

We report a novel phase separation phenomenon observed in the growth of ternary In(x)Ga(1-x)As nanowires by metalorganic chemical vapor deposition. A spontaneous formation of core-shell nanowires is investigated by cross-sectional transmission electron microscopy, revealing the compositional complexity within the ternary nanowires. It has been found that for In(x)Ga(1-x)As nanowires high precursor flow rates generate ternary In(x)Ga(1-x)As cores with In-rich shells, while low precursor flow rates produce binary GaAs cores with ternary In(x)Ga(1-x)As shells. First-principle calculations combined with thermodynamic considerations suggest that this phenomenon is due to competitive alloying of different group-III elements with Au catalysts, and variations in elemental concentrations of group-III materials in the catalyst under different precursor flow rates. This study shows that precursor flow rates are critical factors for manipulating Au catalysts to produce nanowires of desired composition.

Near field phase mapping exploiting intrinsic oscillations of aperture NSOM probe.

An innovative, simple, compact and low cost approach for phase mapping based on the intrinsic modulation of an aperture Near Field Scanning Optical Microscope probe is analyzed and experimentally demonstrated. Several nanoscale silicon waveguides are phase-mapped using this approach, and the different modes of propagation are obtained via Fourier analysis. The obtained measured results are in good agreement with the effective indexes of the modes calculated by electromagnetic simulations. Owing to its simplicity and effectiveness, the demonstrated system is a potential candidate for integration with current near field systems for the characterization of nanophotonic components and devices.

Near field phase mapping exploiting intrinsic oscillations of aperture NSOM probe

An innovative, simple, compact and low cost approach for phase mapping based on the intrinsic modulation of an aperture Near Field Scanning Optical Microscope probe is analyzed and experimentally demonstrated. Several nanoscale silicon waveguides are phase-mapped using this approach, and the different modes of propagation are obtained via Fourier analysis. The obtained measured results are in good agreement with the effective indexes of the modes calculated by electromagnetic simulations. Owing to its simplicity and effectiveness, the demonstrated system is a potential candidate for integration with current near field systems for the characterization of nanophotonic components and devices. © 2011 Optical Society of America.

Near field phase mapping exploiting intrinsic oscillations of NSOM probe

An innovative, simple compact and low cost approach for phase mapping based on the intrinsic modulation of a Near Field Scanning Optical Microscope probe is analyzed and experimentally demonstrated. © OSA/ CLEO 2011.