Stability control of a railway vehicle using absolute stiffness and inerters

Work presented in this paper studies the potential of employing inerters -a novel mechanical device used successfully in racing cars- in active suspension configurations with the aim to enhance railway vehicle system performance. The particular element of research in this paper concerns railway wheelset lateral stability control. Controlled torques are applied to the wheelsets using the concept of absolute stiffness. The effects of a reduced set of arbitrary passive structures using springs, dampers and inerters integrated to the active solution are discussed. A multi-objective optimisation problem is defined for tuning the parameters of the proposed configurations. Finally, time domain simulations are assessed for the railway vehicle while negotiating a curved track. A simplification of the design problem for stability is attained with the integration of inerters to the active solutions. © 2012 IEEE.

Electrorheologic liquid crystals in microsystems: model and measurements

Fluids with a controllable viscosity gained a lot of interest throughout the last years. One of the advantages of these fluids is that they allow to fabricate hydraulic components such as valves with a very simple structure. Although the properties of these fluids are very interesting for microsystems, their applicability is limited at microscale since the particles suspended in these fluids tend to obstruct microchannels. This paper investigates the applicability of electrorheologic Liquid Crystals (LCs) in microsystems. Since LC's do not contain suspended particles, they show intrinsic advantages over classic rheologic active fluids in microapplications. As a matter of fact, LC molecules are usually only a few nanometers long, and therefore, they can probably be used in systems with sub-micrometer channels or other nanoscale applications. This paper presents a novel model describing the electrorheologic behavior of these nanoscale molecules. This model is used to simulate a microvalve controlled by LC's. By comparing measurements and simulations performed on this microvalve it is possible to prove that the model developed in this paper is very accurate. In addition, these simulations and measurements revealed other remarkable properties of LC's, such as high bandwidths and high changes in flow resistance. © 2006 IEEE.

Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates

GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires. © 2010 IEEE.

A comparative study of transistors based on wurtzite and zincblende InAs nanowires

We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100. © 2010 IEEE.

Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio

Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400-510 °C and V/III ratio of 44-700. We demonstrate that minimal tapering of InP NWs can be achieved at 400 °C and V/III ratio of 350. Zinc-blende (ZB) or wurtzite (WZ) NWs is obtained depending on the growth conditions. 4K microphotoluminescence (μ-PL) studies show that emission energy is blue-shifted as growth temperature increases. By changing these growth parameters, one can tune the emission wavelength of InP NWs which is attractive for applications in developing novel optoelectronic devices. © 2010 IEEE.

Development of low-pH cements for immobilisation of intermediate level radioactive waste: Achievements and challenges

Although cementation is a widely recognized solidification/ stabilization process for immobilisation of Intermediate Level Radioactive Waste (ILRW), the low resistance to hyperalkaline pore waters compromises the effectiveness of the process when Portland Cement (PC) is employed. Moreover the manufacture of PC is responsible for significant CO2 emissions. In this context, low pH cements are environmentally more suitable and have emerged as a potential alternative for obtaining secure waste forms. This paper summarises the achievements on development of low-pH cements and the challenges of using these new materials for the ILRW immobilisation. The performance of waste forms is also discussed in terms of radionuclides release. Reactive magnesium oxide and magnesium phosphate cements are emphasised as they feature important advantages such as consumption of available constituents for controlling acid-base reactions, reduced permeability and higher density. Additionally, in order to identify new opportunities for study, the long-term modelling approach is also briefly discussed. Copyright © 2013 by ASME.

Mass chains with passive interconnection: Complex iterative maps and scalability

This paper introduces the problem of passive control of a chain of N identical masses in which there is an identical passive connection between neighbouring masses and a similar connection to a movable point. The problem arises in the design of multi-storey buildings which are subjected to earthquake disturbances, but applies in other situations, for example vehicle platoons. The paper will study the scalar transfer functions from the disturbance to a given intermass displacement. It will be shown that these transfer functions can be conveniently represented in the form of complex iterative maps and that these maps provide a method to establish boundedness in N of the H ∞-norm of these transfer functions for certain choices of interconnection impedance. © 2013 IEEE.