43 resultados para color pattern


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Multiple color states have been realized in single unit cell using double electrochromic (EC) reaction. The precise control of bistability in EC compounds which can maintain several colors on the two separated electrodes allows this new type of pixel to be realized. The specific electrical driving gives a way to maintain both sides in the reduced EC states and this colors overlapping in the vertical view direction can achieve the black state. The four color states (G, B, W, BK) in one cell/pixel can make a valuable progress to achieve a high quality color devices such like electronic paper, outdoor billboard, smart window and flexible display using external light source. © 2012 Optical Society of America.

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We present a multispectral photometric stereo method for capturing geometry of deforming surfaces. A novel photometric calibration technique allows calibration of scenes containing multiple piecewise constant chromaticities. This method estimates per-pixel photometric properties, then uses a RANSAC-based approach to estimate the dominant chromaticities in the scene. A likelihood term is developed linking surface normal, image intensity and photometric properties, which allows estimating the number of chromaticities present in a scene to be framed as a model estimation problem. The Bayesian Information Criterion is applied to automatically estimate the number of chromaticities present during calibration. A two-camera stereo system provides low resolution geometry, allowing the likelihood term to be used in segmenting new images into regions of constant chromaticity. This segmentation is carried out in a Markov Random Field framework and allows the correct photometric properties to be used at each pixel to estimate a dense normal map. Results are shown on several challenging real-world sequences, demonstrating state-of-the-art results using only two cameras and three light sources. Quantitative evaluation is provided against synthetic ground truth data. © 2011 IEEE.

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As-built models have been proven useful in many project-related applications, such as progress monitoring and quality control. However, they are not widely produced in most projects because a lot of effort is still necessary to manually convert remote sensing data from photogrammetry or laser scanning to an as-built model. In order to automate the generation of as-built models, the first and fundamental step is to automatically recognize infrastructure-related elements from the remote sensing data. This paper outlines a framework for creating visual pattern recognition models that can automate the recognition of infrastructure-related elements based on their visual features. The framework starts with identifying the visual characteristics of infrastructure element types and numerically representing them using image analysis tools. The derived representations, along with their relative topology, are then used to form element visual pattern recognition (VPR) models. So far, the VPR models of four infrastructure-related elements have been created using the framework. The high recognition performance of these models validates the effectiveness of the framework in recognizing infrastructure-related elements.

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As-built models have been proven useful in many project-related applications, such as progress monitoring and quality control. However, they are not widely produced in most projects because a lot of effort is still necessary to manually convert remote sensing data from photogrammetry or laser scanning to an as-built model. In order to automate the generation of as-built models, the first and fundamental step is to automatically recognize infrastructure-related elements from the remote sensing data. This paper outlines a framework for creating visual pattern recognition models that can automate the recognition of infrastructure-related elements based on their visual features. The framework starts with identifying the visual characteristics of infrastructure element types and numerically representing them using image analysis tools. The derived representations, along with their relative topology, are then used to form element visual pattern recognition (VPR) models. So far, the VPR models of four infrastructure-related elements have been created using the framework. The high recognition performance of these models validates the effectiveness of the framework in recognizing infrastructure-related elements.

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This book will be of particular interest to academics, researchers, and graduate students at universities and industrial practitioners seeking to apply mobile and pervasive computing systems to improve construction industry productivity.

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The trapped magnetic field is examined in bulk high-temperature superconductors that are artificially drilled along their c-axis. The influence of the hole pattern on the magnetization is studied and compared by means of numerical models and Hall probe mapping techniques. To this aim, we consider two bulk YBCO samples with a rectangular cross-section that are drilled each by six holes arranged either on a rectangular lattice (sample I) or on a centered rectangular lattice (sample II). For the numerical analysis, three different models are considered for calculating the trapped flux: (i), a two-dimensional (2D) Bean model neglecting demagnetizing effects and flux creep, (ii), a 2D finite-element model neglecting demagnetizing effects but incorporating magnetic relaxation in the form of an E-J power law, and, (iii), a 3D finite element analysis that takes into account both the finite height of the sample and flux creep effects. For the experimental analysis, the trapped magnetic flux density is measured above the sample surface by Hall probe mapping performed before and after the drilling process. The maximum trapped flux density in the drilled samples is found to be smaller than that in the plain samples. The smallest magnetization drop is found for sample II, with the centered rectangular lattice. This result is confirmed by the numerical models. In each sample, the relative drops that are calculated independently with the three different models are in good agreement. As observed experimentally, the magnetization drop calculated in the sample II is the smallest one and its relative value is comparable to the measured one. By contrast, the measured magnetization drop in sample (1) is much larger than that predicted by the simulations, most likely because of a change of the microstructure during the drilling process.

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This paper reports on an extensive analysis of the electroluminescence characteristics of InGaN-based LEDs with color-coded structure, i.e., with a triple quantum well structure in which each quantum well has a different indium content. The analysis is based on combined electroluminescence measurements and two-dimensional simulations, carried out at different current and temperature levels. Results indicate that (i) the efficiency of each of the quantum wells strongly depends on device operating conditions (current and temperature); (ii) at low current and temperature levels, only the quantum well closer to the p-side has a significant emission; (iii) emission from the other quantum wells is favored at high current levels. The role of carrier injection, hole mobility, carrier density and non-radiative recombination in determining the relative intensity of the quantum wells is discussed in the text. © 2013 The Japan Society of Applied Physics.