High sensitive NO2 gas sensor with low power consumption using selectively grown ZnO nanorods.

The noble gas sensor using multiple ZnO nanorods was fabricated with CMOS compatible process and sol-gel growth method on selective area and gas response characteristics to NO2 gas of the sensor device were investigated. We confirmed the sensors had high sensitive response denoted by the sensitivity of several tens for NO2 gas sensing and also showed pretty low power consumption close to 20 mW even though the recovery of resistance come up to almost the initial value.

Liquid crystal over silicon device characteristics for holographic projection of high-definition television images.

We discuss some fundamental characteristics of a phase-modulating device suitable to holographically project a monochrome video frame with 1280 x 720 resolution. The phase-modulating device is expected to be a liquid crystal over silicon chip with silicon area similar to that of commercial devices. Its basic characteristics, such as number of pixels, bits per pixel, and pixel dimensions, are optimized in terms of image quality and optical efficiency. Estimates of the image quality are made from the noise levels and contrast, while efficiency is calculated by considering the beam apodization, device dead space, diffraction losses, and the sinc envelope.

Self-aligned coupled nanowire transistor.

The integration of multiple functionalities into individual nanoelectronic components is increasingly explored as a means to step up computational power, or for advanced signal processing. Here, we report the fabrication of a coupled nanowire transistor, a device where two superimposed high-performance nanowire field-effect transistors capable of mutual interaction form a thyristor-like circuit. The structure embeds an internal level of signal processing, showing promise for applications in analogue computation. The device is naturally derived from a single NW via a self-aligned fabrication process.

An experimental model of relay deployment planning tool for a wireless sensor network system to monitor civil engineering structures

It is essential to monitor deteriorated civil engineering structures cautiously to detect symptoms of their serious disruptions. A wireless sensor network can be an effective system for monitoring civil engineering structures. It is fast to deploy sensors especially in difficult-to-access areas, and it is extendable without any cable extensions. Since our target is to monitor deteriorations of civil engineering structures such as cracks at tunnel linings, most of the locations of sensors are known, and sensors are not required to move dynamically. Therefore, we focus on developing a deployment plan of a static network in order to reduce the value of a cost function such as initial installation cost and summation of communication distances of the network. The key issue of the deployment is the location of relays that forward sensing data from sensors to a data collection device called a gateway. In this paper, we propose a relay deployment-planning tool that can be used to design a wireless sensor network for monitoring civil engineering structures. For the planning tool, we formalize the model and implement a local search based algorithm to find a quasi-optimal solution. Our solution guarantees two routings from a sensor to a gateway, which can provide higher reliability of the network. We also show the application of our experimental tool to the actual environment in the London Underground.

Improved infrared thermal imaging of a CMOS MEMS device

We report a technique which can be used to improve the accuracy of infrared (IR) surface temperature measurements made on MEMS (Micro-Electro-Mechanical- Systems) devices. The technique was used to thermally characterize a SOI (Silicon-On-Insulator) CMOS (Complementary Metal Oxide Semiconductor) MEMS thermal flow sensor. Conventional IR temperature measurements made on the sensor were shown to give significant surface temperature errors, due to the optical transparency of the SiO 2 membrane layers and low emissivity/high reflectivity of the metal. By making IR measurements on radiative carbon micro-particles placed in isothermal contact with the device, the accuracy of the surface temperature measurement was significantly improved. © 2010 EDA Publishing/THERMINIC.

Shock transmission and eigenvalue veering within a coupled system.

The operation of dynamical systems in harsh environments requires continuous monitoring. Internal sensors may be used to monitor the conditions in real time. A typical example is the sensor and electronic components used in space structures which, especially during launch, are subject to huge g force. The paper will present an experimental and theoretical study on a simplified model used to analyze the possible cause of high acceleration on the enclosed sensors and equipments due to impulsive loading. The model system consists of two beams coupled using compliant connections. An impulse hammer excites one beam, and vibrations are transmitted to the indirectly driven beam. A theoretical model is developed using a Rayleigh-Ritz approach and validated using experimental results in both the frequency and time domains. Monto Carlo simulation was done with random masses positioned on the indirectly driven beam to determine the worst-case conditions for maximum peak acceleration. Highest acceleration levels were found when mode matching in the two beams led to veering behavior in the coupled modes. The results suggest guidelines for the detailed design of internal components of a structure exposed to shock loading from its environment. [The authors thank Schlumberger Cambridge Research for financial support.].

A 660MHz ZVS DC-DC converter using gate-driver charge-recycling in 0.18μm CMOS with an integrated output filter

The design and manufacture of a prototype chip level power supply is described, with both simulated and experimental results. Of particular interest is the inclusion of a fully integrated on-chip LC filter. A high switching frequency of 660MHz and the design of a device drive circuit reduce losses by supply stacking, low-swing signaling and charge recycling. The paper demonstrates that a chip level converter operating at high frequency can be built and shows how this can be achieved, using zero voltage switching techniques similar to those commonly used in larger converters. Both simulations and experimental data from a fabricated circuit in 0.18μm CMOS are included. The circuit converts 2.2V to 0.75∼1.0V at ∼55mA. ©2008 IEEE.

Magnetic sensor with compensation for lead and coil resistance

A measurement system for magnetic fields or electric currents uses a single-core fluxgate, magneto-inductive or magneto-impedance device driven from a radio frequency excitation source. Flux nulling feedback circuitry is provided to maintain the core of the sensor at substantially zero net flux and improve the linearity and dynamic response of the sensor system. A high pass filter is provided for reducing the dc effects of the ohmic resistance of the coil and lead wires on the effectiveness of the flux nulling feedback.

Fluxgate magnetic sensor with overload detection

A measurement system for magnetic fields and electric currents uses a single-core fluxgate device driven with a radio frequency excitation source and is provided with a means to indicate saturation of the core of the sensor. A means is provided for detecting overload of the sensor as the core approaches continuous saturation using a pair of demodulators and a comparator.

PCB-integrated optical gas sensor

A novel technological platform for multiple gas detection based on the use of PCB-integrated polymer waveguides is presented. A proof-of-principle ammonia sensor is reported integrating onto low-cost FR4 substrates all essential photonic, electronic and chemical components. The device's potential to detect multiple gases is demonstrated. © 2011 IEEE.

High temperature robust SOI ethanol sensor

In this paper we present a robust SOI-CMOS ethanol sensor based on a tungsten-doped lanthanum iron oxide sensing material. The device shows response to gas, has low power consumption, good uniformity, high temperature stability and can be manufactured at low cost and with integrated circuitry. The platform is a tungsten-based CMOS micro-hotplate that has been shown to be stable for over two thousand hours at a high temperature (600°C) in a form of accelerated life test. The tungsten-doped lanthanum iron oxide was deposited on the micro-hotplate as a slurry with terpineol using a syringe, dried and annealed. Preliminary gas testing was done and the material shows response to ethanol vapour. These results are promising and we believe that this combination of a robust CMOS micro-hotplate and a good sensing material can form the basis for a commercial CMOS gas sensor. © 2011 Published by Elsevier Ltd.

Breakdown voltage for superjunction power devices with charge imbalance: An analytical model valid for both punch through and non punch through devices

An analytical model for the electric field and the breakdown voltage (BV) of an unbalanced superjunction (SJ) device is presented in this paper. The analytical technique uses a superposition approach treating the asymmetric charge in the pillars as an excess charge component superimposed on a balanced charge component. The proposed double-exponentialmodel is able to accurately predict the electric field and the BV for unbalanced SJ devices in both punch through and non punch through conditions. The model is also reasonably accurate at extremely high levels of charge imbalance when the devices behave similarly to a PiN diode or to a high-conductance layer. The analytical model is compared against numerical simulations of charge unbalanced SJ devices and against experimental results. © 2009 IEEE.

Trench insulated gate bipolar transistor - a high power switching device

This paper presents a comprehensive theoretical study of the Trench Insulated Gate Bipolar Transistors (TIGBT). Specific physical and geometrical effects, such as the accumulation layer injection, increased channel density, increased channel charge and transversal electric field modulation are discussed. The potential advantages of the Trench IGBT over its conventional planar variant are highlighted. It is concluded that the Trench IGBT is one of the most promising structures in the area of high voltage MOS-controllable switching devices.

Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

The composition of amorphous oxide semiconductors, which are well known for their optical transparency, can be tailored to enhance their absorption and induce photoconductivity for irradiation with green, and shorter wavelength light. In principle, amorphous oxide semiconductor-based thin-film photoconductors could hence be applied as photosensors. However, their photoconductivity persists for hours after illumination has been removed, which severely degrades the response time and the frame rate of oxide-based sensor arrays. We have solved the problem of persistent photoconductivity (PPC) by developing a gated amorphous oxide semiconductor photo thin-film transistor (photo-TFT) that can provide direct control over the position of the Fermi level in the active layer. Applying a short-duration (10 ns) voltage pulse to these devices induces electron accumulation and accelerates their recombination with ionized oxygen vacancy sites, which are thought to cause PPC. We have integrated these photo-TFTs in a transparent active-matrix photosensor array that can be operated at high frame rates and that has potential applications in contact-free interactive displays. © 2012 Macmillan Publishers Limited. All rights reserved.