Thermal annealing effect on the nanomechanical properties and structure of P3HT:PCBM thin films

Nanostructured polymer-fullerene thin films are among the most prominent materials for application in high efficient polymer solar cells. Specifically, poly(3-hexylthiophene) (P3HT) and fullerene derivatives (PCBM) blends are used as the donor/acceptor materials forming a bulk heterojunction. Although P3HT:PCBM properties have been extensively studied, less light has been set on its nanomechanical properties, which affect the device service life. In this work Atomic Force Acoustic Microscopy (AFAM), Atomic Force Spectroscopy and Nanoindentation were used to study the effect of the fullerene presence and the annealing on the P3HT:PCBM nanomechanical behavior. The P3HT:PCBM thin films were prepared by spin coating on glass substrates and then annealed at 100 °C and 145 °C for 30 min. Large phase separation was identified by optical and Atomic Force Microscopy (AFM) for the annealed samples. Needle-like PCBM crystals were formed and an increase of the polymer crystallinity degree with the increase of the annealing temperature was confirmed by X-ray diffraction. AFAM characterization revealed the presence of aggregates close to stiff PCBM crystals, possibly consisting of amorphous P3HT material. AFM force-distance curves showed a continuous change in stiffness in the vicinity of the PCBM crystals, due to the PCBM depletion near its crystals, and the AFM indentation provided qualitative results about the changes in P3HT nanomechanical response after annealing. © 2011 Elsevier B.V. All rights reserved.

Laser micromachining of thin films for optoelectronic devices and packages

Focused laser micromachining in an optical microscope system is used to prototype packages for optoelectronic devices and to investigate new materials with potential applications in packaging. Micromachined thin films are proposed as mechanical components to locate fibres and other optical and electrical components on opto-assemblies. This paper reports prototype structures which are micromachined in silicon carbide to produce beams 5 μm thick by (i) laser cutting a track in a SiC coated Si wafer, (ii) undercutting by anisotropic silicon etching using KOH in water, and (iii) trimming if necessary with the laser system. This approach has the advantage of fast turn around and proof of concept. Mechanical test data are obtained from the prototype SiC beam package structures by testing with a stylus profilometer. The Youngs modulus obtained for chemical vapour deposited silicon carbide is 360 +/- 50 GPa indicating that it is a promising material for packaging applications.

Addition of ferromagnetic CoFe2O4 to YBCO thin films for enhanced flux pinning

An attempt has been made to prepare a YBa2Cu3O 7-δ (YBCO) thin film doped with ferromagnetic CoFe 2O4. Transmission electron microscopy of the resultant samples shows, however, that Y(Fe, Co)O3 forms as a nanoparticulate dispersion throughout the film in preference to CoFe2O4, leaving the YBCO yttrium deficient. As a consequence, the superconducting properties of the sample are poor, with a self-field critical current density of just 0.25 MA cm-2. Magnetic measurements indicate however that the Y(Fe, Co)O3 content, together with any other residual phases, is also ferromagnetic, and some interesting features are present in the in-field critical current behaviour, including a reduced dependence on applied field and a strong c-axis peak in the angular dependence. The work points the way towards future attempts utilising YFeO3 as an effective ferromagnetic pinning additive for YBCO. © 2009 Elsevier B.V. All rights reserved.

Thickness of the near-interface regions and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films

Thickness of the near-interface regions (NIR) and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films were investigated. A method to separate the low-resistive near-interface regions (NIRs) from the high-resistive central bulk region (CBR) in ferroelectric thin films was presented. Results showed that the thickness of the NIRs depended on the electrode materials in use and the CBR resistivity depended on the impurity doping levels.

Flux closure vortexlike domain structures in ferroelectric thin films

Enhanced piezoresponse force microscopy was used to study flux closure vortexlike structures of 90° ferroelastic domains at the nanoscale in thin ferroelectric lead zirconium titanate (PZT) films. Using an external electric field, a vortexlike structure was induced far away from a grain boundary, indicating that physical edges are not necessary for nucleation contrary to previous suggestions. We demonstrate two different configurations of vortexlike structures, one of which has not been observed before. The stability of these structures is found to be size dependent, supporting previous predictions. © 2010 The American Physical Society.