A zero-stiffness elastic shell structure

A remarkable shell structure is described that, due to a particular combination of geometry and initial stress, has zero stiffness for any finite deformation along a twisting path; the shell is in a neutrally stable state of equilibrium. Initially the shell is straight in a longitudinal direction, but has a constant, nonzero curvature in the transverse direction. If residual stresses are induced in the shell by, for example, plastic deformation, to leave a particular resultant bending moment, then an analytical inextensional model of the shell shows it to have no change in energy along a path of twisted configurations. Real shells become closer to the inextensional idealization as their thickness is decreased; experimental thin-shell models have confirmed the neutrally stable configurations predicted by the inextensional theory. A simple model is described that shows that the resultant bending moment that leads to zero stiffness gives the shell a hidden symmetry, which explains this remarkable property.

Axial stiffness of journal bearings in zero-field and field-cooled modes

Superconducting journal bearings have been investigated for use in flywheel systems. We report on the zero-field cooled and field-cooled stiffness of these bearings. They are made up of radial magnet rings with alternating polarities, a pole pitch of 11 mm and a surface field of 0.1 T. Field-cooled stiffness of the journal bearings increased four times over the zero-field-cooled stiffness. © 2005 IEEE.

Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistors

Thin film transistors (TFTs) utilizing an hydrogenated amorphous silicon (a-Si:H) channel layer exhibit a shift in the threshold voltage with time under the application of a gate bias voltage due to the creation of metastable defects. These defects are removed by annealing the device with zero gate bias applied. The defect removal process can be characterized by a thermalization energy which is, in turn, dependent upon an attempt-to-escape frequency for defect removal. The threshold voltage of both hydrogenated and deuterated amorphous silicon (a-Si:D) TFTs has been measured as a function of annealing time and temperature. Using a molecular dynamics simulation of hydrogen and deuterium in a silicon network in the H2 * configuration, it is shown that the experimental results are consistent with an attempt-to-escape frequency of (4.4 ± 0.3) × 1013 Hz and (5.7 ± 0.3) × 1013 Hz for a-Si:H and a-Si:D respectively which is attributed to the oscillation of the Si-H and Si-D bonds. Using this approach, it becomes possible to describe defect removal in hydrogenated and deuterated material by the thermalization energies of (1.552 ± 0.003) eV and (1.559 ± 0.003) eV respectively. This correlates with the energy per atom of the Si-H and Si-D bonds. © 2006 Elsevier B.V. All rights reserved.

Perceptual learning, roving and the unsupervised bias

Perceptual learning improves perception through training. Perceptual learning improves with most stimulus types but fails when . certain stimulus types are mixed during training (roving). This result is surprising because classical supervised and unsupervised neural network models can cope easily with roving conditions. What makes humans so inferior compared to these models? As experimental and conceptual work has shown, human perceptual learning is neither supervised nor unsupervised but reward-based learning. Reward-based learning suffers from the so-called unsupervised bias, i.e., to prevent synaptic " drift" , the . average reward has to be exactly estimated. However, this is impossible when two or more stimulus types with different rewards are presented during training (and the reward is estimated by a running average). For this reason, we propose no learning occurs in roving conditions. However, roving hinders perceptual learning only for combinations of similar stimulus types but not for dissimilar ones. In this latter case, we propose that a critic can estimate the reward for each stimulus type separately. One implication of our analysis is that the critic cannot be located in the visual system. © 2011 Elsevier Ltd.