32 resultados para X-ray photoelectron microscopy


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The residual stresses in Pb(Zr0.3Ti0.7)O3 thin films were measured by the sin2 Ψ method using the normal X-ray incidence. The spacing of different planes (hkl) parallel to the film surface were converted to the spacing of a set of inclined planes (100). The angles between (100) and (hkl) were equivalent to the tilting angles of (100) from the normal of film surface. The residual stresses were extracted from the linear slope of the strain difference between the equivalent inclined direction and normal direction with respect to the sin2 Ψ. The results were in consistency with that derived from the conventional sin2 Ψ method. © 2013 The Japan Society of Applied Physics.

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The findings presented herein show that the electronic properties of CVD graphene on nickel can be altered from metallic to semiconducting by introducing oxygen adsorbates via UV/ozone or oxygen plasma treatment. These properties can be partially recovered by removing the oxygen adsorbates via vacuum annealing treatment. The effect of oxidation is studied by scanning tunneling microscopy/spectroscopy (STM/STS) and X-ray photoelectron spectroscopy (XPS). As probed by STM/STS, an energy gap opening of 0.11-0.15 eV is obtainable as the oxygen/carbon atomic ratio reaches 13-16%. The corresponding XPS spectra show a significant monotonic increase in the concentration of oxygenated functional groups due to the oxidation treatments. This study demonstrates that the opening of energy gap in CVD graphene can be reasonably controlled by a combination of UV/ozone or oxygen plasma treatment and vacuum annealing treatment. © 2013 Elsevier B.V.